1
Item Symbol Rating Unit
Drain-source voltage V DS 60
Continuous drain current ID±100
Pulsed drain current ID(puls] ±400
Gate-source voltage VGS ±30
Maximum Avalanche Energy EAV *1 1268.3
Max. power dissipation PD150
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK2906-01 FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
A valanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=60V
VGS=±30V
ID=50A VGS=10V
ID=50A VDS=25V
VCC=30V ID=100A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
mA
nA
mΩ
S
pF
A
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 0.83
35.0 °C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=10mA VDS=VGS
Tch=25°C
VGS=0V Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
L=100 µH Tch=25°C
IF=100A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs Tch=25°C
V
A
A
V
mJ
W
°C
°C
*1 L=0.169mH, Vcc=24V
60
2.5 3.0 3.5
10 500
0.2 1.0
10 100
5.7 7.8
25 55
5400 8100
2100 3150
550 830
29 50
200 350
160 240
150 230
100 1.0 1.5
85
0.21
-55 to +150
TO-3P
3. Source
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2
10-1 100101102103
10-1
100
101
102
103
ID [A]
VDS [V]
Safe operatin
g
area
ID=f(VDS):D=0.01,Tc=25°C
t=
1µs
10µs
1ms
10ms
100ms
100µs
D.C.
Characteristics
2SK2906-01 FUJI POWER MOSFET
0 50 100 150
0
50
100
150
200
Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
t
T
D=
t
T
012345
0
50
100
150
200
6.0V
5.5V
4.0V
3.5V
4.5V
10V 8V
5.0V
VGS=20V
Typical output characteristics
ID=f(VDS):80µs pulse test,Tc=25°C
ID [A]
VDS [V] 0246810
0.1
1
10
100
Typical transfer characteristics
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
ID [A]
VGS [V]
100101102103
100
101
102
103
Typical forward transconductance
g
fs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
gfs [s]
ID [A] 0 50 100 150 200
0
10
20
30
40
50
6V
RDS(on) [m Ω]
ID [A]
Typical Drain-Source on-State Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
8V
10V
20V
4.5V 5.0V4.0V
VGS=
3.5V
5.5V
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3
2SK2906-01 FUJI POWER MOSFET
-50 0 50 100 150
0
5
10
15
20
max.
typ.
Drain-source on-state resistance
RDS(on)=f(Tch):ID=50A,VGS=10V
RDS(on)[m Ω]
Tch [°C]
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS(th) [V]
Tch [°C]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=10mA
min.
typ.
max.
10-2 10-1 100101102
100p
1n
10n
100n
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
C [F]
VDS [V]
Ciss
Coss
Crss
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
20
40
60
80
100
120
140
160
180
200
220
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
10V 5V VGS=0V
IF [A]
VSD [V]
0 50 100 150 200 250 300
0
5
10
15
20
25
12V
30V
Vcc=48V
Typical Gate Charge Characteristics
VGS=f(Qg):ID=100A,Tch=25°C
0
10
20
30
40
50
VDS [V]
VGS [V]
Q
g
[nC]
VGS
VDS
10-1 100101102
101
102
103
104
t [ns]
ID [A]
td(off)
tf
tr
td(on)
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=30V,VGS=10V,RG=10
Ω
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4
2SK2906-01 FUJI POWER MOSFET
0 50 100 150
0
20
40
60
80
100
120
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch)
I(AV) [A]
Startin
g
Tch [°C]
0 50 100 150
0
200
400
600
800
1000
1200
1400
Maximum Avalanche ener
g
y vs. startin
g
Tch
Eas=f(startin
g
Tch):Vcc=24V, I(AV)<=100A
Eas [mJ]
Starting Tch [°C]
10
-5 10
-4 10
-3 10
-2 10
-1 10
010
1
10
-2
10
-1
10
0
10
1
0.5
0.2
0.02
0.05
0.1
0.01
0
Transient thermal impedande
Zthch=f(t) parameter:D=t/T
Zthch-c [K/W]
t [s]
t
T
D=
t
T
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