Ordering number : EN2085C 2SB1203/2SD1803 Bipolar Transistor http://onsemi.com (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications * Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features * * * * High current and high fT Low collector-to-emitter saturation voltage * Fast switching speed Excellent linearity of hFE Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Specifications ( ): 2SB1203 Absolute Maximum Ratings at Ta=25C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Unit (--)60 V (--)50 V (--)6 V (--)5 A (--)8 A Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 0.6 1 2 2.3 0.5 3 2.3 1 2 1.2 0.5 0.85 0.6 1 : Base 2 : Collector 3 : Emitter 4 : Collector 0.5 1.5 5.5 4 2.5 1.2 7.5 0.8 1.6 0.85 0.7 2.3 6.5 5.0 0.8 5.5 4 2SB1203S-E 2SB1203S-H 2SD1203T-E 2SD1203T-H 2SB1803S-E 2SB1803S-H 2SD1803T-E 2SD1803T-H 7.0 1.5 0.5 7.0 2.3 6.5 5.0 3 0 to 0.2 1.2 2.3 2.3 2SB1203S-TL-E 2SB1203S-Tl-H 2SB1203T-TL-E 2SB1203T-Tl-H 2SB1803S-TL-E 2SB1803S-Tl-H 2SB1803T-TL-E 2SB1803T-Tl-H 1 : Base 2 : Collector 3 : Emitter 4 : Collector TP-FA TP Product & Package Information * Package : TP * JEITA, JEDEC : SC-64, TO-251 * Minimum Packing Quantity : 500 pcs./bag * Package : TP-FA * JEITA, JEDEC : SC-63, TO-252 * Minimum Packing Quantity : 700 pcs./reel Marking (TP, TP-FA) Packing Type (TP-FA) : TL Electrical Connection 2,4 B1203 RANK LOT No. 2,4 D1803 RANK LOT No. 1 1 TL 2SB1203 3 2SD1803 3 Semiconductor Components Industries, LLC, 2013 September, 2013 60612EA TKIM TA-4030, TA-4052/N2503TN (KT)/92098HA (KT)/8309MO/3097AT, TS No.2085-1/10 2SB1203 / 2SD1803 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 1 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C W 20 W 150 C --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 VCE=(--)2V, IC=(--)0.5A hFE2 VCE=(--)2V, IC=(--)4A fT Cob VCE=(--)5V, IC=(--)1A Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time typ 70* max Unit (--)1 A (--)1 A 400* 35 (130)180 VCB=(--)10V, f=1MHz IC=(--)3A, IB=(--)0.15A V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage min VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions MHz (60)40 pF (--280)220 (--550)400 (--)0.95 (--)1.3 mV IC=(--)3A, IB=(--)0.15A IC=(--)10A, IE=0A (--)60 V V IC=(--)1mA, RBE= (--)50 V(BR)EBO ton IE=(--)10A, IC=0A (--)6 tstg tf See specified Test Circuit. V V (50)50 ns (450)500 ns (20)20 ns * : The 2SB1203/2SD1803 are classified by 0.5A hFE as follows : Rank Q R S T hFE 70 to 140 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20Ms D.C.b1% OUTPUT IB2 INPUT VR RB RL 507 + 100MF VBE= --5V + 470MF VCC=25V IC=10IB1= --10IB2=2A For PNP, the polarity is reversed. Ordering Information Package Shipping memo 2SB1203S-E Device TP 500pcs./bag Pb Free 2SB1203S-H TP 500pcs./bag Pb Free and Halogen Free 2SD1203T-E TP 500pcs./bag Pb Free 2SD1203T-H TP 500pcs./bag Pb Free and Halogen Free 2SB1803S-E TP 500pcs./bag Pb Free 2SB1803S-H TP 500pcs./bag Pb Free and Halogen Free 2SD1803T-E TP 500pcs./bag Pb Free 2SD1803T-H TP 500pcs./bag Pb Free and Halogen Free 2SB1203S-TL-E TP-FA 700pcs./reel Pb Free 2SB1203S-Tl-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SB1203T-TL-E TP-FA 700pcs./reel Pb Free 2SB1203T-Tl-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SB1803S-TL-E TP-FA 700pcs./reel Pb Free 2SB1803S-Tl-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SB1803T-TL-E TP-FA 700pcs./reel Pb Free 2SB1803T-Tl-H TP-FA 700pcs./reel Pb Free and Halogen Free No.2085-2/10 2SB1203 / 2SD1803 IC -- VCE --4 --3 A --50m --40mA --30mA --20mA --2 --10mA --1 0 IB=0 0 --0.4 --0.8 --1.2 --1.6 Collector-to-Emitter Voltage, VCE -- V 2SD1803 From top 50mA 45mA 40mA 35mA 30mA 4 3 25mA 20mA 15mA 2 10mA 5mA 1 0 --2.0 IB=0 0 0.4 0.8 1.2 1.6 2.0 Collector-to-Emitter Voltage, VCE -- V ITR09180 IC -- VCE --5 IC -- VCE 5 2SB1203 From top --100mA --90mA --80mA --70mA --60mA Collector Current, IC -- A Collector Current, IC -- A --5 IC -- VCE 5 2SB1203 ITR09181 2SD1803 30mA A --30m --25mA --20mA --3 Collector Current, IC -- A Collector Current, IC -- A --4 --15mA --10mA --2 --5mA --1 0 IB=0 0 --2 --4 --6 --8 4 20mA 3 15mA 2 10mA 5mA 1 0 --10 25mA IB=0 0 IC -- VBE 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 100 7 5 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 ITR09186 1.0 1.2 ITR09185 2SD1803 VCE=2V Ta=75C 25C --25C 2 100 7 5 2 3 0.8 hFE -- IC 3 3 2 0.6 5 2 5 7--0.01 0.4 7 3 10 0.2 Base-to-Emitter Voltage, VBE -- V DC Current Gain, hFE DC Current Gain, hFE 2 0 1000 Ta=75C 25C --25C 3 2 0 --1.2 2SB1203 VCE= --2V 5 3 ITR09184 hFE -- IC 7 4 1 Base-to-Emitter Voltage, VBE -- V 1000 2SD1803 VCE=2V 5C 25 C --25 C --1 10 Ta= 7 --3 8 5 Collector Current, IC -- A --4 Ta= 75 25C C --25 C Collector Current, IC -- A --5 6 IC -- VBE 6 2SB1203 VCE= --2V --2 4 Collector-to-Emitter Voltage, VCE -- V ITR09183 Collector-to-Emitter Voltage, VCE -- V ITR09182 --6 2 10 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 ITR09187 No.2085-3/10 2SB1203 / 2SD1803 f T -- IC 2SB1203 VCE= --5V 5 3 2 100 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 --10 ITR09188 Collector Current, IC -- A Cob -- VCB 5 100 7 5 3 2 10 5 7 --1.0 2 3 5 7 --10 2 3 2SB1203 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 --1000 7 5 3 2 C 25 --100 7 5 5C C --25 7 Ta= 3 2 --10 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 7 3 25C 75C 5 5 7--0.01 2 3 5 7 --0.1 2 3 3 5 7 0.1 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 ITR09194 2 3 5 7 1.0 2 3 5 7 10 ITR09189 Cob -- VCB 2SD1803 f=1MHz 2 100 7 5 3 2 5 7 2 1.0 3 5 7 2 10 3 5 7 100 ITR09191 VCE(sat) -- IC 5 2SD1803 IC / IB=20 3 2 1000 7 5 3 2 100 7 5 C 25 C Ta=75 C --25 3 10 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A VBE(sat) -- IC 10 5 Ta= --25C 2 Collector-to-Base Voltage, VCB -- V 5 7 --10 ITR09192 2SB1203 IC / IB=20 7 --1.0 3 2 2 Collector Current, IC -- A --10 5 10 7 --100 ITR09190 VCE(sat) -- IC 5 7 3 5 Collector-to-Base Voltage, VCB -- V 100 5 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 2 3 2 Collector Current, IC -- A 2SB1203 f=1MHz 3 5 10 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 10 2SD1803 VCE=5V 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Gain-Bandwidth Product, f T -- MHz 7 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 1000 5 7 10 ITR09193 2SD1667 2SD1803 IC / IB=20 7 5 3 2 1.0 Ta= --25C 7 75C 5 3 25C 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 ITR09195 No.2085-4/10 2SB1203 / 2SD1803 ASO ICP IC 100ms 3 2 op era 3 2 25 C 5C =2 Tc nT a= ion tio 3 2 0.1 7 5 t era op DC 1.0 7 5 DC Collector Current, IC -- A 10 7 5 2SB1203 / 2SD1803 1m 10 s ms Tc=25C Single pulse For PNP, the minus sign is omitted. 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 PC -- Ta 24 Collector Dissipation, PC -- W 2 2SB1203 / 2SD1803 20 16 Id ea lh ea td iss 12 ip on 8 4 No heat sink 1 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 ITR09196 ati 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR09197 No.2085-5/10 2SB1203 / 2SD1803 Taping Specification 2SB1203S-TL-E, 2SB1203S-Tl-H, 2SB1203T-TL-E, 2SB1203T-Tl-H, 2SB1803S-TL-E, 2SB1803S-Tl-H, 2SB1803T-TL-E, 2SB1803T-Tl-H No.2085-6/10 2SB1203 / 2SD1803 Outline Drawing Land Pattern Example 2SB1203S-TL-E, 2SB1203S-Tl-H, 2SB1203T-TL-E, 2SB1203T-Tl-H, 2SB1803S-TL-E, 2SB1803S-Tl-H, 2SB1803T-TL-E, 2SB1803T-Tl-H Mass (g) Unit 0.282 mm Unit: mm * For reference 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.2085-7/10 2SB1203 / 2SD1803 Bag Packing Specification 2SB1203S-E, 2SB1203S-H, 2SD1203T-E, 2SD1203T-H, 2SB1803S-E, 2SB1803S-H, 2SD1803T-E, 2SD1803T-H No.2085-8/10 2SB1203 / 2SD1803 Outline Drawing 2SB1203S-E, 2SB1203S-H, 2SD1203T-E, 2SD1203T-H, 2SB1803S-E, 2SB1803S-H, 2SD1803T-E, 2SD1803T-H Mass (g) Unit 0.315 mm * For reference No.2085-9/10 2SB1203 / 2SD1803 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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