©2005 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGD3N60LSD Rev. A
FGD3N60LSD IGBT
Nov 2005
FGD3N60LSD
IGBT
Features
• High Current Capability
• Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
• High Input Impedance
Applications
• HID Lamp Applications
• Piezo Fuel Injection Applications
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide
very low conduction losses. The device is designed for applica-
tions where very low On-Voltage Drop is a required feature.
D-PAK
GE
C
C
G
E
Absolute Maximum Ratings
Symbol Description FGD3N60LSD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C 6 A
Collector Current @ TC = 100°C 3 A
ICM (1) Pulsed Collector Current 25 A
I F Diode Continous Forward Current @ TC = 100°C 3 A
I FM Diode Maximum Forward Current 25 A
PDMaximum Power Dissipation @ TC = 25°C40 W
Derating Factor 0.32 W/°C
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
250 °C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC (IGBT) Thermal Resistance, Junction-to-Case -- 3.1 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) -- 100 °C/W
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
2www.fairchildsemi.com
FGD3N60LSD Rev. A
FGD3N60LSD IGBT
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGD3N60LSD FGD3N60LSDTM D-PAK 380mm 16mm 2500
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown]
Voltage
VGE = 0V, IC = 1mA -- 0.6 -- V/°C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 3mA, V = VGE 2.5 3.2 5.0 V
VCE(sat) Collector to Emitter
Saturation Voltage
IC = 3A, VGE = 10V -- 1.2 1.5 V
IC = 6A, VGE = 10V -- 1.8 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 25V, VGE = 0V,
f = 1MHz
-- 185 -- pF
Coes Output Capacitance -- 20 -- pF
Cres Reverse Transfer Capacitance -- 5.5 -- pF
Switching Characteristics
td(on) Turn-On Delay Time VCC = 480 V, IC = 3A,
RG = 470Ω, VGE = 10V,
Inductive Load, TC = 25°C
-- 40 -- ns
trRise Time -- 40 -- ns
td(off) Turn-Off Delay Time -- 600 -- ns
tfFall Time -- 600 -- ns
Eon Turn-On Switching Loss -- 250 -- uJ
Eoff Turn-Off Switching Loss -- 1.00 -- mJ
Ets Total Switching Loss -- 1.25 -- mJ
td(on) Turn-On Delay Time VCC = 480 V, IC = 3A,
RG = 470Ω, VGE = 10V,
Inductive Load, TC = 125°C
-- 40 -- ns
trRise Time -- 45 -- ns
td(off) Turn-Off Delay Time -- 620 -- ns
tfFall Time -- 800 -- ns
Eon Turn-On Switching Loss -- 300 -- uJ
Eoff Turn-Off Switching Loss -- 1.9 -- mJ
Ets Total Switching Loss -- 2.2 -- mJ
QgTotal Gate Charge VCE = 480 V, IC = 3A,
VGE = 10V
-- 12.5 -- nC
Qge Gate-Emitter Charge -- 2.8 -- nC
Qgc Gate-Collector Charge -- 4.9 -- nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH
CE
3www.fairchildsemi.com
FGD3N60LSD Rev. A
FGD3N60LSD IGBT
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
VFM Diode Forward Voltage IF = 3A TC = 25°C-- 1.5 1.9 V
TC = 100°C-- 1.55 --
trr Diode Reverse Recovery Time IF = 3A,
di/dt = 100A/us
VR = 200V
TC = 25°C-- 234 -- ns
TC = 100°C-- -- --
Irr Diode Peak Reverse Recovery Current TC = 25°C-- 2.64 -- A
TC = 100°C-- -- --
Qrr Diode Reverse Recovery Charge TC = 25°C-- 309 -- nC
TC = 100°C-- -- --
4www.fairchildsemi.com
FGD3N60LSD Rev. A
FGD3N60LSD IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
02468
0
6
12
18
24
30
20V 15V
10V
VGE = 8V
Common Emitter
TC = 25°C
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V] 02468
0
6
12
18
24
30
Common Emitter
TC = 125°C
VGE = 8V
20V
15V
10V
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
Figure 3. Typical Output Characteristics Figure 4. Transfer Characteristics
110
0
2
4
6
8
10
Collector Current, IC [A]
Common Emitter
VCE = 20V
TC = 25°C
TC = 125°C
Gate-Emitter Voltage, VGE[V]
0.1 1 10
0
2
4
6
8
10
Collector-Emitter Voltage, VCE[V]
Collector Current, IC [A]
Common Emitter
VGE = 10V
TC = 25°C
TC = 125°C
Figure 5. Saturation Voltage vs. Case
0 30 60 90 120 150
0
1
2
3
IC = 6A
IC = 3A
IC = 1.5A
Common Emitter
VGE = 10V
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC [°C]
110
0
100
200
300
400
500
600
Cres
Coes
Cies
Collector - Emitter Voltage, VCE [V]
Capacitance [pF]
Common Emitter
VGE = 0V, f = 1MHz
TC = 25°C
Figure 6. Capacitance Characteristics
5www.fairchildsemi.com
FGD3N60LSD Rev. A
FGD3N60LSD IGBT
Typical Performance Characteristics (Continued)
Figure 7. Gate Charge Figure 8. Turn-On Characteristics vs. Gate
Resistance
200 400 600 800 1000
10
100
1000
Common Emitter
VCC = 480V, VGE = 10V
IC = 3A
TC = 25°C
TC = 125°C
Ton
Tr
Switching Time [ns]
Gate Resistance, RG [Ω]
024681012
0
2
4
6
8
10
12
Common Emitter
RL = 160Ω
Vcc = 480V
TC = 25°C
Gate - Emitter Voltage, VGE [V]
Gate Charge, Qg [nC]
Figure 9. Turn-Off Characteristics vs. Figure 10. Switching Loss vs. Gate Resistance
Gate Resistance
200 400 600 800 1000
100
1000
10000
Toff
Tf
Switching Time [ns]
Gate Resistance, RG [Ω]
Common Emitter
VCC = 480V, VGE = 10V
IC = 3A
TC = 25°C
TC = 125°C
200 400 600 800 1000
10
100
1000
10000
Switching Loss [µJ]
Gate Resistance, RG [Ω]
Eon
Eoff
Common Emitter
VCC = 480V, VGE = 10V
IC = 3A
TC = 25°C
TC = 125°C
Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.
Collector Current Collector Current
234
10
100
Tr
Ton
Switching Time [ns]
Collector Current, IC [A]
Common Emitter
Vcc = 480V, VGE = 10V
RG = 470Ω
TC = 25°C
TC = 125°C
234
100
1000
Tf
Toff
Switching Time [ns]
Collector Current, IC [A]
Common Emitter
Vcc = 480 V, VGE = 10V
RG = 470Ω
TC = 25°C
TC = 125°C
6www.fairchildsemi.com
FGD3N60LSD Rev. A
FGD3N60LSD IGBT
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current Figure 14. Forward Characteristics
01234
0.1
1
10
100
Forward Current, IF [A]
Forward Voltage Drop, VF [V]
Tc = 25°C
Tc = 100°C
234
100
1000
Eon
Eoff
Switching Loss [µJ]
Collector Current, IC [A]
Common Emitter
Vcc = 480 V, VGE = 10V
RG = 470Ω
TC = 25°C
TC = 125°C
Figure 15. Forward Voltage Drop Vs Tj Figure 16. SOA Characteristics
25 50 75 100 125
1.2
1.6
2.0
2.4
2.8
IF=3 A
IF=6 A
Forward Voltage Drop, VF [V]
Junction Temperature, Tj [°C]
IF=1.5 A
0.1 1 10 100 1000
0.01
0.1
1
10
100
50µs
100µs
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse Tc = 25°C
Curves must be derated
linearly with increase
in temperature
Collector Current, Ic [A]
Collector - Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
1E-5 1E-4 1E-3 0.01 0.1 1 10
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Thermal Response [Zthjc]
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
7www.fairchildsemi.com
FGD3N60LSD Rev. A
FGD3N60LSD IGBT
Mechanical Dimensions
6.60 ±0.20
2.30 ±0.10
0.50 ±0.10
5.34 ±0.30
0.70 ±0.20
0.60 ±0.20
0.80 ±0.20
9.50 ±0.30
6.10 ±0.20
2.70 ±0.20 9.50 ±0.30
6.10 ±0.20
2.70 ±0.20
MIN0.55
0.76 ±0.10 0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
6.60 ±0.20
0.76 ±0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89 ±0.10
(0.10) (3.05)
(1.00)
(0.90)
(0.70)
0.91 ±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
MAX0.96
(4.34)(0.50) (0.50)
D-PAK
Dimensions in Millimeters
FGD3N60LSD IGBT
8www.fairchildsemi.com
FGD3N60LSD Rev. A
FGD3N60LSD IGBT
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to affect
its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
UniFET™
VCX™
Wire™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17
