Document Number: 94422 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
VSK.F200..P Series
Vishay Semiconductors
FEATURES
• Fast turn-off thyristor
• Fast recovery diode
• High surge capability
• Electrically isolated baseplate
• 3500 VRMS isolating voltage
• Industrial standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
This series of MAGN-A-PAK modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and others
where fast switching characteristics are required.
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IT(AV) 200 A
Type Modules - Thyristor, Fast
MAGN-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IT(AV)
200 A
TC85 °C
IT(RMS) 444
A
ITSM
50 Hz 7600
60 Hz 8000
I2t50 Hz 290 kA2s
60 Hz 265
I2t2900 kA2s
tq20/25 μs
trr 2
VDRM/VRRM 800/1200 V
TJRange - 40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM/IDRM
AT TJ = 125 °C
mA
VSK.F200- 08 800 800 50
12 1200 1200
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VSK.F200..P Series
Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 380 560 630 850 2460 3180
A
400 Hz 460 690 710 1060 1570 2080
2500 Hz 310 450 530 760 630 860
5000 Hz 250 360 410 560 410 560
10 000 Hz 180 280 300 410 - -
Recovery voltage Vr50 50 50 50 50 50 V
Voltage before turn-on Vd80 % VDRM 80 % VDRM 80 % VDRM
Rise of on-state current dI/dt 50 50 - - - - A/μs
Case temperature 856085608560°C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 /μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature IT(AV) 180° conduction, half sine wave 200 A
85 °C
Maximum RMS on-state current IT(RMS) As AC switch 444
A
Maximum peak, one-cycle
non-repetitive on-state,
surge current
ITSM
t = 10 ms No voltage
reapplied
Sinusoidal
half wave,
initial TJ = 125 °C
7600
t = 8.3 ms 8000
t = 10 ms 100 % VRRM
reapplied
6400
t = 8.3 ms 6700
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
290
kA2s
t = 8.3 ms 265
t = 10 ms 100 % VRRM
reapplied
205
t = 8.3 ms 187
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 2900 kA2s
Low level value or threshold voltage VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum 1.18 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.25
Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum 0.74 m
High level value on-state slope resistance rt2 (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.70
Maximum on-state voltage drop VTM Ipk = 600 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.73 V
Maximum holding current IHTJ = 25 °C, IT > 30 A 600 mA
Maximum latching current ILTJ = 25 °C, VA = 12 V, Ra = 6 , Ig = 1A 1000
180° el
ITM
180° el
ITM
100 µs
ITM
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VSK.F200..P Series
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A Vishay Semiconductors
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
KJ
Maximum non-repetitive rate of rise dI/dt Gate drive 20 V, 20 , tr 1 ms, VD = 80 % VDRM,
TJ = 25 °C 800 A/μs
Maximum recovery time trr ITM = 350 A, dI/dt = - 25 A/μs, VR = 50 V, TJ = 25 °C 2
μs
Maximum turn-off time tq
ITM = 750 A; TJ = TJ maximum; dI/dt = - 25 A/μs;
VR = 50 V; dV/dt = 400 V/μs linear to 80 % VDRM
20 25
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = 125 °C, exponential to 67 % VDRM 1000 V/μs
RMS insulation voltage VINS 50 Hz, circuit to base, TJ = 25 °C, t = 1 s 3000 V
Maximum peak reverse and off-state
leakage current
IRRM,
IDRM
TJ = 125 °C, rated VDRM/VRRM applied 50 mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM f = 50 Hz, d% = 50 60 W
Maximum peak average gate power PG(AV) TJ = 125 °C, f = 50 Hz, d% = 50 10
Maximum peak positive gate current IGM TJ = 125 °C, tp 5 ms 10 A
Maximum peak negative gate voltage -VGT 5V
Maximum DC gate current required to trigger IGT TJ = 25 °C, Vak 12 V, Ra = 6 200 mA
DC gate voltage required to trigger VGT 3V
DC gate current not to trigger IGD TJ = 125 °C, rated VDRM applied 20 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range TJ- 40 to 125 °C
Storage temperature range TStg - 40 to 150
Maximum thermal resistance,
junction to case per junction RthJC DC operation 0.125
K/W
Maximum thermal resistance,
case to heatsink per module RthC-hs Mounting surface flat, smooth and greased 0.025
Mounting torque ± 10 %
MAP to heatsink A mounting compound is recommended. The
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound. Use of
cable lugs is not recommended, busbar should be
used and restrained during tightening. Threads must
be lubricated with a compound.
4 to 6
(35 to 53)
N · m
(lbf · in)
busbar to MAP
Approximate weight 500 g
17.8 oz.
Case style MAGN-A-PAK
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VSK.F200..P Series
Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
RthJC CONDUCTION
CONDUCTIONS ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION UNITS
180° 0.009 0.006
K/W
120° 0.10 0.011
90° 0.014 0.015
60° 0.020 0.020
30° 0.32 0.033
60
70
80
90
100
110
120
130
0 40 80 120 160 200 240
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduc tion Ang le
VSK.F200.. Series
R ( D C ) = 0 . 12 5 K/ W
thJC
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
VSK.F200.. Serie s
R (DC) = 0.125 K/W
thJC
0
50
100
150
200
250
300
350
0 40 80 120 160 200
RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
VSK.F200.. Series
Pe r Ju n c t io n
T = 1 2 5 ° C
J
0
50
100
150
200
250
300
350
400
450
500
0 50 100 150 200 250 300 350
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.F200.. Se ries
Pe r Ju n c t i o n
T = 1 2 5 ° C
J
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VSK.F200..P Series
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A Vishay Semiconductors
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
Fig. 9 - Reverse Recovery Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
3000
4000
5000
6000
7000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
VSK.F200.. Series
Pe r Ju n c t io n
Initia l T = 125°C
@ 6 0 Hz 0 . 0 0 8 3 s
@ 5 0 Hz 0 . 0 1 0 0 s
At Any Rated Loa d Condition And With
Rated V Ap plied Following Surge.
RRM
J
3000
4000
5000
6000
7000
8000
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pu l se Tra i n Dura t i o n ( s)
Maximum Non Rep etitive Surge Current
Versus Pulse Train Duration. Control
Of Conduc tion May Not Be Ma inta ined.
VSK.F200.. Series
Pe r Ju n c t i o n
Init ia l T = 125°C
No Vo lta ge Re ap plied
Ra t e d V Re a p p l i e d
RRM
J
100
1000
10000
1234567
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Inst a nt a n e o us On-sta t e Volt a g e (V)
VSK.F200.. Serie s
Pe r Jun c ti o n
T = 1 2 5 ° C
J
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10 100
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJC
Transient Thermal Impedanc e Z (K/ W)
Steady State Value:
R = 0.125 K/ W
(DC Operation)
VSK.F200.. Series
Pe r Ju n c t i o n
thJC
80
100
120
140
160
180
200
220
240
260
280
300
320
10 20 30 40 50 60 70 80 90 100
300 A
200 A
100 A
500 A
Maximum Reverse Recovery Charge - Qrr (µC)
Ra te Of Fa ll Of Forward Current - di/ d t (A/ µs)
I = 1000 A
VSK.F200.. Se rie s
T = 1 2 5 ° C
TM
J
30
60
90
120
150
180
10 20 30 40 50 60 70 80 90 100
500A
300A
200A
100A
Ma ximum Re verse Rec overy Current - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
VSK.F200.. Series
T = 1 2 5 ° C
I = 1000A
J
TM
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VSK.F200..P Series
Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
1000
5000
150
2500
Peak On-stata Current (A)
Pu lse Ba se w i d t h ( µ s)
VSK.F200.. Series
Sinusoidal pulse
T = 8 5° C
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
tp
1E4
DRM
C
s
s
D
1
E1 1E2 1 E3 1 E4
50 Hz
400
1000
5000
150
2500
Pu l se Ba se w i d t h ( µs)
Snub b er c irc uit
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
VSK.F200.. Series
Si n u so i d a l p u l se
T = 6 0 ° C
tp
1E1
CDRM
s
s
D
1E2
1E3
1E4
1E1 1 E2 1 E3 1 E4
50 Hz
400
1000
5000
150
2500
Pu lse Ba se w i d t h ( µ s)
Peak On-state Current (A)
VSK.F200.. Series
Tr a p e z o i d a l p u l s e
T = 8 5 ° C d i / d t 5 0 A / µ s
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
1E4
tp
DRM
C
s
s
D
E1 1E2 1 E3 1E4
50 Hz
400
1000
5000
150
2500
Pu lse Ba se w i d t h ( µ s)
Sn u b b e r c i rc u i t
R = 10 o h m s
C = 0.47 µF
V = 80% V
VSK.F200.. Se rie s
Trapezoidal pulse
T = 8 5 ° C d i/ d t 1 0 0 A / µ s
1E1
tp
DRM
s
s
D
C
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
1000
5000
150
2500
Peak On-state Current (A)
Pu l se Ba se w i d t h ( µ s)
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
VSK.F200.. Se rie s
Trapezoidal pulse
T = 6 0 ° C d i / d t 5 0 A / µ s
1E4
tp
DRM
C
s
s
D
E1 1E2 1 E3 1E4
50 Hz
400
1000
5000
150
2500
Pu l se Ba se w i d t h ( µ s)
VSK.F200.. Series
Tr a p e zo i d a l p u l se
T = 60°C di/ d t 100A/ µs
Snub b er c irc uit
R = 10 o h m s
C = 0.47 µF
V = 80% V
1E1
tp
DRM
C
s
s
D
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VSK.F200..P Series
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A Vishay Semiconductors
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
1E1
1E2
1E3
1E4
1E11E21E31E4
10 joules p er pulse
5
2.5
1
0.5
0.25
0.1
0.05
Peak On-state Current (A)
Pu lse Ba se w i d t h ( µ s)
VSK.F200.. Se ries
Si n u so i d a l p u l se
tp
1E4
E1 1E2 1E3 1 E4
10 jo ule s p er pulse
5
2.5
1
0.5
0.25
0.1
0.05
Pu lse Ba se w i d t h ( µ s)
VSK.F200.. Se ries
Trapezoidal pulse
di/dt 50A/µs
tp
1E1
0.1
1
10
100
0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
T
j=25 °C
Tj = 1 2 5 ° C
Tj= - 40 ° C
(2) (3)
In st a n t a n e o u s G a t e C u rr e n t ( A )
Inst a nta ne o us Ga t e Volt a g e ( V)
a) Recommended load line for
b) Recommended load line for
Rectangular gate pulse
rated di/dt : 10V, 10ohms
<=30% rated di/dt : 10V, 20ohms
VSK.F200.. Series Frequency Limited by PG(AV)
(1) PGM = 8W, tp = 25ms
(2) PGM = 20W, tp = 1ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 80W, tp = 2.5ms
(1) (4)
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VSK.F200..P Series
Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Two SCRs common cathodes U
SCR/diode common cathodes K
Two SCRs common anodes V
1- Module type
2- Circuit configuration (see circuit configuration table)
3- Fast SCR
5- Voltage code x 100 = VRRM (see Voltage Ratings table)
8- Lead (Pb)-free
4- Current rating: IT(AV) x 10 rounded
6- dV/dt code: H ≤ 400 V/µs
7-t
q code: K ≤ 20 µs
J ≤ 25 µs
Device code
51 324 678
VSK T F 200 - 12 H K P
VSKUF..
+--
K1
G1
G2
K2
--
+
VSKKF..
+--
G2
K2
--
+
VSKVF..
-++
K1
G1
G2
K2
++
-
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VSK.F200..P Series
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A Vishay Semiconductors
SCR/diode common anodes N
SCR/diode doubler circuit, negative control L
Two SCRs doubler circuit T
SCR/diode doubler circuit, positive control H
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95086
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
VSKNF..
-
K1
G1
++
++
-
VSKLF..
G2
K2
~+-
+-
~
VSKTF..
+-
~
~+-
K1
G1
G2
K2
VSKHF..
~+-
K1
G1
+-
~
Document Number: 95086 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 03-Aug-07 1
MAGN-A-PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
• UL identification number for gate and cathode wire: UL 1385
• UL identification number for package: UL 94 V-0
Ø 5.5
6
(0.24)
38 (1.5)
50 (1.97)
6 (0.24)
115 (4.53)
80 (3.15)
9 (0.35)
20 (0.79)
3 screws M8 x 1.25 35 (1.38) 28 (1.12)
32
(1.26)
HEX 13
10 (0.39)
92 (3.62)
51 (2.01)
52 (2.04)
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Revision: 12-Mar-12 1Document Number: 91000
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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VSKTF200-08HK VSKLF200-04HK VSKTF200-08HJ VS-VSKTF200-08HKP VS-VSKTF200-12HKP VS-VSKUF200-
12HKP IRKHF200-12HJ IRKHF200-12HK IRKLF200-04HK IRKLF200-12HJ IRKLF200-12HK IRKTF200-08HJ
IRKTF200-08HK IRKTF200-12HJ IRKTF200-12HK VSKUF200-08HK VSKUF200-12HJ VSKUF200-12HK
VSKVF200-12HJ VS-VSKLF200-12HJP VS-VSKLF200-12HKP VS-VSKHF200-12HKP VS-VSKLF200-04HKP
