JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAP50-03 SOD-323 GENERAL PURPOSE PIN DIODE FEATURES y Low diode capacitance y Low diode forward resistance MARKING: A81 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 Parameter Symbol Limit Unit Continuous Reverse Voltage VR 50 V Continuous Forward Current IF 50 mA Power Dissipation (Ta=90) Pd 200 mW Thermal Resistance Junction to Ambient RJA Junction Temperature Tj Storage Temperature TSTG /W 85 150 -55~+150 Electrical Ratings @Ta=25 Parameter Symbol Min Continuous reverse voltage VR 50 Forward voltage VF Reverse current Diode capacitance Diode forward resistance Typ Max Unit Conditions V IR=10A 1.1 V IF=50mA IR 100 nA VR=50V Cd1A 0.91 pF VR=0V,f=1MHz Cd1B 1.11 pF VR=0V,f=1MHz Cd2 0.55 pF VR=1V,f=1MHz Cd3 0.35 pF VR=5V,f=1MHz rD 40 IF=0.5mA , f=100MHz; note1 rD 25 IF=1mA , f=100MHz;note1 rD 5 IF=10mA , f=100MHz;note1 Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0. A,Apr,2011 A Typical Characteristics Forward BAP50-03 Characteristics Characteristics (uA) (mA) Ta=100 1 0.5 0.6 0.7 Ta =2 5 Ta =1 00 10 REVERSE CURRENT IR IF FORWARD CURRENT Reverse 0.1 50 0.8 FORWARD VOLTAGE VF 0.9 0.01 Ta=25 1E-3 1.0 50 10 (V) 100 REVERSE VOLTAGE Capacitance Characteristics VR (V) Power Derating Curve 1.0 250 200 PD (mW) 0.8 0.6 150 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25 f=1MHz 0.4 0.2 0.0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 ( ) A,Apr,2011