TSKS5400
www.vishay.com Vishay Semiconductors
Rev. 2.4, 03-Sep-13 1Document Number: 83780
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Infrared Emitting Diode, 950 nm, GaAs
DESCRIPTION
The TSKS5400-FSZ is an infrared, 950 nm emitting diode in
GaAs technology with high radiant power, molded in a clear
plastic package.
FEATURES
Package type: leaded
Package form: side view lens
Dimensions (L x W x H in mm): 5 x 2.65 x 5
Peak wavelength: λp = 950 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity: ϕ = ± 30°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Package matched with detector TEKS5400
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Photointerrupters
Transmissive sensors, gap sensors
Reflective sensors
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
14354-1
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
TSKS5400-FSZ 4.5 ± 30 950 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSKS5400-FSZ Tape and ammopack MOQ: 2000 pcs, 2000 pcs/ammopack Side view lens
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR6V
Forward current IF100 mA
Surge forward current tp 100 μs IFSM 2A
Power dissipation PV170 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 25 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 270 K/W
TSKS5400
www.vishay.com Vishay Semiconductors
Rev. 2.4, 03-Sep-13 2Document Number: 83780
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Forward Voltage Fig. 4 - Forward Voltage vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21321
T
amb
- Ambient Temperature (°C)
PV - Power Dissipation (mW)
R
thJA
= 270 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21322
I
F
- Forward Current (mA)
R
thJA
= 270 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp 20 ms VF1.3 1.7 V
Reverse voltage IR = 10 μA VR6V
Temperature coefficient of VFIF = 100 mA TKVF - 1.3 mV/K
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj30 pF
Radiant intensity IF = 100 mA, tp 20 ms Ie24.57mW/sr
Radiant power IF = 50 mA, tp 20 ms φe10 mW
Temperature coefficient of φeIF = 50 mA TKφe- 0.8 %/K
Angle of half sensitivity ϕ± 30 deg
Peak wavelength IF = 50 mA λp950 nm
Spectral bandwidth IF = 50 mA Δλ 50 nm
Rise time IF = 100 mA tr800 ns
IF = 1 A, tp/T = 0.01, tp 10 μs tr450 ns
94 7996
10 1
10 0
10 2
10 3
10 4
10-1
I - Forward Current (mA)
F
43210
V
F- Forward Voltage (V)
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
-45 -30 -15 150 3045607590
14347
I
F= 10 mA
V - Forward Voltage (V)
F
T
amb - Ambient Temperature (°C)
TSKS5400
www.vishay.com Vishay Semiconductors
Rev. 2.4, 03-Sep-13 3Document Number: 83780
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
94 7913
10
3
10
110
210
4
10
0
0.01
0.1
1
100
10
I
F- Forward Current (mA)
I - Radiant Intensity (mw/sr)
e
t/ T= 0.001
p
t= 100 µs
p
0.1
1
10
100
11 0 100 1000
13718
I
F
- Forward Current (mA)
- Radiant Power (mW)
e
Φ
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
14348
I
erel; e rel
I
F
= 10 mA
- 45 - 30 - 15 15 03 04 56 07 59 0
T
amb
- Ambient Temperature (°C)
Φ
900 950
0
0.25
0.5
0.75
1.0
1.25
λ - Wavelength (nm)
1000
94 7994
Φe rel - Relative Radiant Power
IF = 100 mA
0.4 0.2 0 0.2 0.4
I - Relative Radiant Intensity
e rel
0.6
14349
0.6
0.9
0.8
0°
30°
10° 20
40°
50°
60°
70°
80°
0.7
1.0
°
TSKS5400
www.vishay.com Vishay Semiconductors
Rev. 2.4, 03-Sep-13 4Document Number: 83780
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
14345
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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