© 2004 IXYS All rights reserved 1 - 2
DSI 45
420
IXYS reserves the right to change limits, test conditions and dimensions.
Dimensions in mm (1 mm = 0.0394")
VRSM VRRM Type
V V
900 800 DSI 45-08A
1300 1200 DSI 45-12A
1700 1600 DSI 45-16A DSI 45-16AR
VRRM = 800-1600 V
IF(AV)M = 48 A
Symbol Conditions Maximum Ratings
IF(AV)M TC= 105°C; 180° sine 48 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 475 A
VR= 0 V; t = 8.3 ms (60 Hz), sine 520 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 380 A
VR= 0 V; t = 8.3 ms (60 Hz), sine 420 A
I2tTVJ = 45°C; t = 10 ms (50 Hz), sine 1120 A2s
VR= 0 V; t = 8.3 ms (60 Hz), sine 1120 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 720 A2s
VR= 0 V; t = 8.3 ms (60 Hz), sine 720 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
Md *mounting torque 0.8...1.2 Nm
VISOL ** 50/60 Hz, RMS, t = 1 minute, leads-to-tab 2500 V~
Weight typical 6 g
* Verson A only; ** Version AR only
Features
•International standard package
•Planar glassivated chips
• Version AR isolated and
UL registered E153432
•Epoxy meets UL 94V-0
Applications
•Supplies for DC power equipment
•DC supply for PWM inverter
•Field supply for DC motors
•Battery DC power supplies
Advantages
•Space and weight savings
•Simple mounting
•Improved temperature and power cycling
•Reduced protection circuits
Rectifier Diode
* ISOPLUS 247 TM without hole
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D* 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 2.2 2.59 0.087 0.102
Symbol Conditions Characteristic Values
IRTVJ = TVJM; VR = VRRM ≤3mA
VFIF = 40 A; TVJ = 25°C≤1.18 V
VT0 For power-loss calculations only 0.8 V
rTTVJ = TVJM 8mΩ
RthJC DC current 0.55 K/W
RthCH typical 0.2 K/W
Data according to IEC 60747
A = Anode, C = Cathode
TO-247 AD ISOPLUS 247TM
Version A Version AR
C (TAB)
C
ATAB
C
A
AC
© 2004 IXYS All rights reserved 2 - 2
DSI 45
420
IXYS reserves the right to change limits, test conditions and dimensions.
0.001 0.01 0.1 1
0
100
200
300
400
500
23456789110
102
103
104
0.00.40.81.21.6
0
10
20
30
40
50
60
70
0 10203040
0
20
40
60
80
100
0 20 40 60 80 100 120 140
0.001 0.01 0.1 1 10
0.0
0.2
0.4
0.6
I2t
IFSM
IF
A
VFt
s
t
ms
Ptot
W
Id(AV)M
A
Tamb
t
s
K/W
A2s
0 20 40 60 80 100 120 140
0
10
20
30
40
50
IF(AV)M
TC
A
V
A
°C °C
DSI45
TVJ = 45°C
50Hz, 80% VRRM VR = 0 V
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
RthHA :
0.5 K/W
1.0 K/W
1.5K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
TVJ = 150°C
TVJ = 45°C
TVJ=150°C
TVJ= 25°C
TVJ = 150°C
ZthJC
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.1633 0.016
2 0.2517 0.118
3 0.0933 0.588
4 0.04167 2.6
