VS-25TTS08FP-M3, VS-25TTS12FP-M3
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Revision: 09-Jan-18 1Document Number: 96300
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Thyristor High Voltage, Phase Control SCR, 25 A
FEATURES
• Designed and qualified for industrial level
• Fully isolated package (VINS = 2500 VRMS)
• UL pending
• 125 °C max. operating junction temperature
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding, and battery
charge
DESCRIPTION
The VS-25TTS...FP... high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
PRIMARY CHARACTERISTICS
IT(AV) 16 A
VDRM/VRRM 800 V, 1200 V
VTM 1.25 V
IGT 45 mA
TJ-40 °C to 125 °C
Package 3L TO-220 FullPAK
Circuit configuration Single SCR
(G) 3
2
(A)
1 (K)
3L TO-220 FullPAK
1
2
3
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter TA = 55 °C,
TJ = 125 °C, common heatsink
of 1 °C/W
18 22 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 16 A
IRMS 25
VRRM/VDRM 800, 1200 V
ITSM 350 A
VT16 A, TJ = 25 °C 1.25 V
dV/dt 500 V/μs
dI/dt 150 A/μs
TJ-40 to +125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VS-25TTS08FP-M3 800 800 10
VS-25TTS12FP-M3 1200 1200
VS-25TTS08FP-M3, VS-25TTS12FP-M3
www.vishay.com Vishay Semiconductors
Revision: 09-Jan-18 2Document Number: 96300
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
Maximum average on-state current IT(AV) TC = 51 °C, 180° conduction half sine wave 16
A
Maximum RMS on-state current IRMS 25
Maximum peak, one-cycle,
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied 300
10 ms sine pulse, no voltage reapplied 350
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 450 A2s
10 ms sine pulse, no voltage reapplied 630
Maximum I2t for fusing I2tt = 0.1ms to 10 ms, no voltage reapplied 6300 A2s
Maximum on-state voltage drop VTM 16 A, TJ = 25 °C 1.25 V
On-state slope resistance rtTJ = 125 °C 12.0 m
Threshold voltage VT(TO) 1.0 V
Maximum reverse and direct leakage current IRM/IDM
TJ = 25 °C VR = Rated VRRM/VDRM
0.5
mA
TJ = 125 °C 10
Holding current IHAnode supply = 6 V, resistive load, initial IT = 1 A,
TJ = 25 °C -150
Maximum latching current ILAnode supply = 6 V, resistive load, TJ = 25 °C 200
Maximum rate of rise of off-state voltage dV/dt TJ = TJ max., linear to 80 %, VDRM = Rg - k = Open 500 V/μs
Maximum rate of rise of turned-on current dI/dt 150 A/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current + IGM 1.5 A
Maximum peak negative gate voltage - VGM 10 V
Maximum required DC gate current to trigger IGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 60
mAAnode supply = 6 V, resistive load, TJ = 25 °C 45
Anode supply = 6 V, resistive load, TJ = 125 °C 20
Maximum required DC gate
voltage to trigger VGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5
V
Anode supply = 6 V, resistive load, TJ = 25 °C 2.0
Anode supply = 6 V, resistive load, TJ = 125 °C 1.0
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.25
Maximum DC gate current not to trigger IGD 2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.9
µsTypical reverse recovery time trr TJ = 125 °C 4
Typical turn-off time tq110
VS-25TTS08FP-M3, VS-25TTS12FP-M3
www.vishay.com Vishay Semiconductors
Revision: 09-Jan-18 3Document Number: 96300
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -40 to 125 °C
Maximum thermal resistance,
junction to case RthJC DC operation 2.5
°C/W
Maximum thermal resistance,
junction to ambient RthJA 62
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth, and greased 0.5
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style 3L TO-220 FullPAK 25TTS08FP
25TTS12FP
0 5 10 15 20
0
20
40
60
80
100
120
140
30° 60° 90°
180°
120°
Average On-State Current (A)
Maximum Allowable Case Temperature (°C)
0 5 10 15 20 25 30
0
20
40
60
80
100
120
140
30° 60°
180° DC
120°
90°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
0
5
10
15
20
25
0 4 8 12 16 20
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
T = 125 °C
J
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
T = 125 °C
J
VS-25TTS08FP-M3, VS-25TTS12FP-M3
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Revision: 09-Jan-18 4Document Number: 96300
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
150
200
250
300
350
1 10 100
Number Of Equal Amplitude Half Cycle
Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Initial T = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
J
At any rated load condition and with
Rated V applied following surge.
RRM
100
150
200
250
300
350
400
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum non repetitive surge current
vs. pulse train duration.
Control of conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
1
10
100
1000
0 1 2 3 4 5
T = 25 °C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125 °C
J
Square Wave Pulse Duration (s)
Thermal Impedance ZthJC (°C/W)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
D = 0.01
VS-25TTS08FP-M3, VS-25TTS12FP-M3
www.vishay.com Vishay Semiconductors
Revision: 09-Jan-18 5Document Number: 96300
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-25TTS08FP-M3 50 1000 Antistatic plastic tubes
VS-25TTS12FP-M3 50 1000 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96155
Part marking information www.vishay.com/doc?95456
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = 2 5 ° C
T
J = 125 °C
b)Recommended load line for
Fr e q u e n c y Li m i t e d b y PG ( A V )
a)Recommended load line for
ra t e d d i/ d t : 10 V, 20 ohm s
tr = 0.5 µs, tp >= 6 µs
TJ = -1 0 ° C
IGD
VGD
<= 30% rated di/ dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
2- Current rating (25 = 25 A)
3- Circuit configuration:
4- Package:
5
T = single thyristor
- Type of silicon:
6- Voltage code x 100 = VRRM
T = TO-220AB
Standard recovery rectifier
7- FullPAK
8
08 = 800 V
12 = 1200 V
Device code
6
243 5 7 8
25 T T S 12 FP -M3
1
1- Vishay Semiconductors product
-Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
VS-
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 06-Jul-17 1Document Number: 96155
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3L TO-220 FullPAK
DIMENSIONS in millimeters
Notes
(1) All dimensions are in mm
(2) Package body size exclude mold flash and burrs. Moldflash should be less than 6 mils
Exposed Cu
Mold ash bleeding
1.30
1.05
1.20
1.47
13.56
12.90
3.3
3.1
Bottom view
2.80
2.44
10.6
10.0
0.61
0.38 2.85
2.65
3.7
3.2 7.31
6.50
0.9
0.7
2.54 TYP.
2.54 TYP.
16.0
15.8
5° ± 0.5° 5° ± 0.5°
4.8
4.6
(2 places)
R 0.7
R 0.5
Hole Ø 3.40
3.10
Legal Disclaimer Notice
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Revision: 01-Jan-2021 1Document Number: 91000
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