IXYS NEWS
2005 / 1 MSC
IXYS announced that in keeping up
with ambitious growth plans in the
IGBT market, its European Opera-
tion, a leader in Direct Copper Bond
(DCB) module packaging
technology , located in Lampertheim,
Germany has extended its portfolio
of IGBT modules down in power to
cover the high volume cost sensitive
segment of the market. This new
family of DCB based IGBT Modu-
les are housed in the industry
standard low profile “Econo-style”
module outline which cost
effectively covers the current ranges
from 10 to 60 Amps depending on
configuration and voltage ratings.
IXYS has now made available in
volume production both 6 Pack and
Converter-Brake-inverter (CBI)
configurations in the Econo-style
IGBT Module Line to include Economical Small 6Pack Incorporating
Latest NPT3 and Tr ench IGBT Technologies
module utilizingboth low loss NPT3
and Trench IGBT technologies.
“The combination of improved
higher efficiency IGBTs with this
growing segment of these markets”,
according to Peter Ingram, President
of IXYS Europe.
6 Pack versions of these IGBT
modules include the MWI15 and
MWI60 rated at1200V with current
capabilities varying from 19-58 Amp
at 25C. The CBI versions include
the MUBW10 and MUBW35
offered at 600V with current ratings
of 12- 42 Amp at 25C and the
MUBW15 and MUBW30 with
current ratings of 19-30 Amp at 25C
rated at 1200V.
T ypical applications for this product
include AC drives, UPS, AC servo
and robotic drives. All modules are
UL approved and are readily
available on stock. Datasheets and
detailed information are available at
www.ixys.com.
IXYS announced the availability of
a new line of 1700V IGBT Copacks
and Isolated Package 1700V IGBT
Phase Leg products with its
proprietary 1800V SONIC-FRDTM
ultrasoft, fast recovery diodes.
IXYS Offers Discrete 1700V IGBT Copacks With New Soft Recovery
SONIC-FRD Diodes to minimize switching noise and
eliminate the need for costly snubber
circuits.
Copacks will be offered in 16A and
24A versions with TO-247, TO-268,
PLUS247TM and ISOPLUS247TM
package options. A 24A rated Phase
Leg configuration is offered in IXYS
proprietary ISOPLUS i4-PACTM.
The i4-PAC is a UL recognized
isolated package incorporating a
DCB ceramic isolator which
provides 2500Vrms isolation with
superior isolated thermal
performance. Two ISOPLUS i4-
PACTM versions are offered,
including a solderable, leaded version
and a surface-mountable version.
IXYS’ new 1700V discrete IGBTs
provide a lower cost solution using
standard PCB assembly for a broad
range of high voltage applications.
These high speed „A“ Copacks and
Phase Legs are intended for high
voltage, fast switching applications
such as induction heating, induction
cooking, 480 to 575VAC offline
inverters, flyback power supplies,
UPS and microwave ovens.
These new Copack and Phase Leg
products provide unique, cost
effective options for customers with
applications requiring 1700V power
switching. IXYS is offering its fast
switching „A“ Version 1700V NPT
IGBTs in Copack and Phase Leg
configurations for PWM applica-
tions with switching frequencies up
to 50kHz.
These high voltage NPT IGBT
discretes can enable more costly,
lower performance solutions such as
thyristors or series connected
MOSFETs or IGBTs typically used
at voltages above 1200V. Offered as
Copacks, they offer a more complete
solution for power conversion
applications to improve efficiency
and reliability due to reduced voltage
drop, lower switching losses and the
need for fewer components.
Enhancing the efficiency and noise
performance of these Copacks and
Phase Legs is the use of IXYS 1800V
SONIC-FRD ultrasoft, fast
recovery diodes. IXYS SONIC-FRD
fast and ultrafast recovery diodes are
designed for temperature stability
with low forward voltage and ultra-
low, ultra-soft reverse recovery
characteristics. In addition, IXYS
SONIC-FRD diodes are optimized
to provide excellent dynamic
avalanche ruggedness. These diodes
minimize losses in hard switching
applications, while maintaining
superior soft recovery characteristics
low cost DCB module package
enables IXYS to serve high volume
“micro-packaged” AC Drives and
UPS markets up to 5KW, the fastest
2
IXYS has introduced a new family
of Next Generation Short Circuit
Rated IGBTs for appliance and
white goods motor drive
applications. These 600V, Short
Circuit Rated B2-Class Medium
Speed IGBTs are ideal for high
volume, small drive applications.
This family applies IXYS Next Ge-
neration IGBT Technology to its
Short Circuit rated family of 600V
IGBTs to provide significant
improvements in efficiency for off-
line small drive applications requiring
this class of 600V device with
switching frequency ranging up to
30kHz. The B2-Class IGBTs have
up to 25% improvement in
saturation voltage and lower turn-
off energy versus IXYS prior
generation of B-Class IGBTs.
S-B2 Class Short-Circuit Rated Medium Speed IGBT Copacks
Part Number VCES IC (110°C) VCE (ON, 25°C) @E
off @ TJ = 125°C R¸(J-C) Package
It, MAX / ItIC = It, VCE =
480V T yp.
IXSP10N60B2D1 600 V 10 A 2.50 V / 10 A 0.79 mJ 0.83 °C/W TO-220
IXSA10N60B2D1 600 V 10 A 2.50 V / 10 A 0.79 mJ 0.83 °C/W TO-263
IXSH10N60B2D1* 600 V 10 A 2.50 V / 10 A 0.79 mJ 0.83 °C/W TO-247
IXSQ10N60B2D1* 600 V 10 A 2.50 V / 10 A 0.79 mJ 0.83 °C/W TO-3P
IXSP20N60B2D1 600 V 20 A 2.50 V / 16 A 0.97 mJ 0.65 °C/W TO-220
IXSA20N60B2D1 600 V 20 A 2.50 V / 16 A 0.97 mJ 0.65 °C/W TO-263
IXSH20N60B2D1 600 V 20 A 2.50 V / 16 A 0.97 mJ 0.65 °C/W TO-247
IXSQ20N60B2D1* 600 V 20 A 2.50 V / 16 A 0.97 mJ 0.65 °C/W TO-3P
IXSH30N60B2D1* 600 V 30 A 2.50 V / 30 A 1.50 mJ 0.42 °C/W TO-247
IXST30N60B2D1* 600 V 30 A 2.50 V / 30 A 0.50 mJ 0.42 °C/W TO-268
IXSH40N60B2D1* 600 V 40 A 2.50 V / 40 A 1.90 mJ 0.31 °C/W TO-247
IXST40N60B2D1* 600 V 40 A 2.50 V / 40 A 1.90 mJ 0.31 °C/W TO-268
* Samples and datasheets available 1/05.
These performance improvements
are further enhanced by a 25%
reduction in thermal resistance,
providing significant increases in po-
wer handling and reliability .
IXYS’ new Short-Circuit Rated B2-
Class of IGBTs offer significant
reductions in conduction and
switching losses, which when
coupled with the improvements in
thermal performance, greatly extend
their performance and thus cost
efficiency. This family of IGBTs
possesses a lower saturation voltage
at elevated temperature, as compared
to the saturation voltage of other
NPT type IGBTs used for small dri-
ve applications. Initial products will
be offered for applications ranging
from 10A to 40A in TO-220, TO-
247 and TO-3P discrete packages,
as well as surface mountable TO-
263 and TO-268 packages.
IXYS has also recently taken steps
to decrease its manufacturing costs
on all its products, including IGBT s.
These manufacturing improvements
are of particular benefit for very high
volume applications, particularly the
cost sensitive small drive
applications of the appliance and
white goods markets. Its pursuit of
cost improvements has significant
impact on enabling IXYS to
aggressively pursue new business in
these markets, for which IXYS S-
B2 Class IGBTs are the first. Addi-
tional products will be developed in
the future to address the unique
requirements of these high volume
markets.
Next Generation B2-Class Short Circuit Rated IGBTs for
Appliance and White Goods Applications
IXYS Corporation, a leader in power
semiconductors for power
conversion and motion control
applications, announces the
extension of its thyristor (SCR)
portfolio in the standard package
miniBLOC (SOT-227B).
The ‘Single Thyristor’ family with
miniBLOC package now has a
current range of 25 to 150A with
VRRM ratings of 1200 and 1600 V.
The planar passivated SCR-dies are
the basis of high reliability and
performance in many different
applications and systems as in soft-
starters, motor controlling, solid
state switches, light and temperature
control and several rectifying circuits.
Next to its easy mounting with just
two screws the robust package
Product ITAV / A@ V RRMVI
TSMA
TC = 80 °C
MCO 25-12/16io6 31 1200 - 1600 370
MCO 50-12/16io6 54 1200 - 1600 740
MCO 75-12/16io6 77 1200 - 1600 1070
MCO 100-12/16io6 99 1200 - 1600 1400
MCO 150-12/16io6 149 1200 - 1600 2000
New single Thyristor Family in miniBLOC TM Housing
miniBLOC offers also an isolation
voltage of 2500V and high current
capability.
With the introduction of this new
range of single SCRs IXYS makes a
further step to supply customers
with a very comprehensive range of
solutions for power semiconductors
from MW to MW at one service.
The MwT-1789 is a high linearity
GaAs MESFET device in low cost
SOT89 package that is ideally suited
for high linearity driver, PA (Power
Amplifier), and high dynamic range
LNA applications. The applications
include 2G, 2.5G, and 3G wireless
infrastructure standards, such as
GSM, TDMA, cdma, Edge,
cdma2000, WCDMA, TD-
SCDMA, and UMTS base stations.
This product is also ideal for high
data rate wireless LAN infrastructure
applications, such as high QAM rate
802.11 WiFi and 802.16 WiMax base
stations and APs (Access Points). In
additional, the product can be used
for point-to-point microwave
communications links. The third
order intercept performance of the
MwT-1789 is excellent, typically 18
dB above the 1 dB power gain
compression point. The noise figure
is as low as 0.8 dB at 900 MHz.
The chip is produced using MwT’s
proprietary high linearity device
design. It also uses MwT reliable
metallization process. All chips are
passivated using MwT’s patented
„Diamond-Like Carbon“ process for
increased durability .
GaAs MESFET in low
cost SOT89 package
IXYS expanded its new family of 3-
Phase and Half-Bridge Drivers
optimized for gate drive applications
up to 650V. This family provides a
complete spectrum of solutions with
0.6A peak to 6.0A peak output dri-
ve current capability for applications
ranging from 1kHz to 1MHz. These
Drivers draw upon a newly
optimized architecture first
introduced with the IX6R11,
building on and enhancing its
superior performance and high-end
current handling capability of the
IX6R11. As with the original
IX6R11, IXYS 650V Driver IC
Family gives better matching of
propagation delays, enhanced fault
tolerance and reliability, with
improved efficiency and cooler
operation. This 3-Phase and Half-
Bridge Driver Family was planned
to provide compatibility with similar
Drivers from other suppliers, while
offering the superior performance of
our architecture. The Family includes
unique customer options in
650V 3-Phase and Half-Bridge Driver IC Family Offering Superior Performance for Full Range of Consumer ,
Automotive and Industrial Applications
packaging and configurations.
Several Drivers are offered in
packages that offer size (16-Pin
MLP, 48-Pin SSLGA) or thermal
advantages (18-Pin SOIC-CT). A
unique product configuration is the
IX6S11 offered for split-rail circuit
configurations (+300V/-200V), with
control logic ground referenced.
Performance advantages common to
IXYS 3-Phase and Half-Bridge Dri-
ver ICs include 50kV/µs dV/dt noise
immunity and 200V negative voltage
transient immunity, 8 times that of
competing Half-Bridge Drivers.
Noise immunity is further enhanced
by the use of non-latching level
translation. IXYS level translation
technique exhibits lower power
dissipation versus techniques using
high-voltage transistors typical of
competing Half-Bridge Drivers.
Lower dissipation enables the use
of IXYS Drivers for larger loads,
higher bus voltages or for faster
switching frequency. Lower
dissipation means also that IXYS
Drivers can be pushed to higher
temperatures with greater reliability .
This Family of Drivers offers a wide
mix of user options for input logic
options, output current ratings and
packages. The high peak current
capability of the IX6R11 enables the
drive of larger MOSFET and IGBT
die sizes at higher frequency without
additional discrete transistors and
components. 600mA Drivers, such
as the IXD611, are used in lower
power/lower frequency applications
such as small power tools. Other
user options covered by this Family
include fixed and programmable
delays, shutdown options,
protection features, as well as high
and low side under voltage
protection. Performance advantages
include extended voltage range
operation, and extended temperature
operation from –55°C to +125°C.
600mA
Half-Bridge
Drivers
3-Phase and Half-Bridge Driver Summary Table
IXYS PN Special Features Package(1)
Shutdown Inputs/Keying Protection Features Deadtime
IXA611(1) MOSFET Yes (High) Dual/In Phase No No P7(2),S3(2),S3T/R(5),M6(3),M6T/R(6)
IX B6 1 1 (1 ) MOSFET No Dual/High-In Phase/Low-Inv Cross-Conduct Fixed - 520ns Typ P1(3),S1(3),S1T/R(6)
IXC611(1) MOSFET No Single/High Side Cross-Conduct Fixed - 650ns Typ P1(3),S1(3),S1T/R(6)
IXD611(1) MOSFET No Dual/In Phase No No P1(3),P7(3),S1(3),S1T/R(5),S7(3),S7T/R (5)
IXE611(1) Logic No Dual/In Phase No No P1(4),S1(4),S1T/R(7)
IXF611(1) Logic Yes (Low) Single/High Side Cross-Conduct Fixed - 540ns Typ P1(4),S1(4),S1T/R(7)
IXG611(1) MOSFET No Dual/In Phase Cross-Conduct Fixed - 100ns Typ P1(3),S1(3),S1T/R(6)
IXH611(1) MOSFET No Dual/In Phase Cross-Conduct Fixed - 540ns Typ P1(3),S1(3),S1T/R(6)
IXJ611(1) MOSFET No Dual/In Phase No No P1(4),S1(4),S1T/R(7)
IXK611(1) MOSFET No Dual/Out of Phase No No P1(4),S1(4),S1T/R(7)
600mA 3-Phase Drivers
IXA531(1) IGBT Yes (Low) Six/Out of Phase Cross-Conduct,OCP (Prog. Reset) N o L4(3),L4T/R(5),S10(2),S10T/R(5)
2A Half-Bridge Drivers
IX2A11(1) MOSFET Yes (Low) Single/High Side Cross-Conduct Fixed - 500ns Typ P1(3),S1(3),S1T/R(6)
IX2B11(1) MOSFET Yes (Low) Single/High Side Cross-Conduct Programmable P7(3),S7(3),S7T/R(6)
IX2C11(1) MOSFET No Dual/In Phase No No P1(3),S1(3),S1T/R(6)
IX2D11(1) MOSFET No Dual/In Phase No No P7(3),S7(3),S7T/R(6)
IX2R11(1) MOSFET Yes (High) Dual/In Phase No No P7(2),S3(2),S3T/R(5),M6(2),M6T/R(5)
4A Half-Bridge Drivers
IX4R11(1) MOSFET Yes (High) Dual/In Phase No No P7(2),S3(2),S3T/R(5),M6(2),M6T/R(5)
6A Half-Bridge Drivers
IX6R11(1) MOSFET Yes (High) Dual/In Phase No No P7(2),S3(2),S3T/R(5),S6(2),S6T/R(5),M6(2),M6T/R(5)
IX6S11(1,8) MOSFET No Dual/In Phase No No S6,S6T/R(3)
(1) Package designation. L4 - 44-Pin PLCC S1T/R - 8-Pin SOIC on Tape and Reel L4T/R - 44-Pin PLCC on Tape and Reel S3 - 16-Pin SOIC M6 - 16-Pin MLP S3T/R - 16-Pin SOIC on Tape
and Reel M6T/R - 16-Pin MLP on Tape and Reel S6 - 16-Pin SOIC-CT (Heatsinkable Package) P1 - 8-Pin PDIP S6T/R - 16-Pin SOIC-CT (Heatsinkable Package) on Tape and Reel P7 -
14-Pin PDIP S10 - 48-Pin SSLGA S1 - 8-Pin SOIC S10T/R - 48-Pin SSLGA on Tape and Reel Consult datasheet for Tube or Tape and Reel package quantities.
(2) Samples available Nov 2004. (3) Samples available Dec 2004. (4) Samples available Jan 2005.
(5) Samples available Feb 2005. (6) Samples available Mar 2005. (7) Samples available Apr 2005. (8) Half-Bridge Driver configured for Split-Rail circuits, (+300/-200V).
UVLO Level
IGBT
MOSFET , LOGIC
IXYS has developed a new
technology platform of Power
MOSFET products, called PolarHT
and PolarHV, for the voltage range
from 55V to 600V. These new
families of Power MOSFET s include
cost-efficient, Standard Power
MOSFETs and high-performance,
HiPerFET Power MOSFETs. IXYS
has now extended this MOSFET
Family to include PolarHV™ 500V
and 600V rated parts.
IXYS’ proven HiPerFET process
yields Power MOSFETs with a fast
intrinsic body diode with low Qrr
and enhanced dV/dt ruggedness.
IXYS’ HiPerFETs are targeted for
hard switching inverter and power
PolarHT™ – 500V and 600V Standard Power MOSFET Table
Part Number V DSS I25 RDS(on) Qg RthJC Package
Min. Tc=25°C Tc=25°C Type
VA ΩΩ
ΩΩ
ΩnC °C/W
IXT(1)1R6N50P 500 1.6 6 2 3 Y
IXT(1)2R4N50P 50 0 2.4 3.5 4 2.5 Y, P
IXT(1)3N50P 5 0 0 3.6 2.0 8 1.8 Y, P, A
IXT(1)5N50P 5 0 0 5 1.3 1 2 1.5 P, A
IXT(1)6N50P 5 0 0 6 1.0 1 5 1.3 P, A
IXTP12N50PM 500 6 0.50 30 2.5 P..M
IXT(1)8N50P 5 0 0 8 0.8 2 1 1.0 P, A
IXT(1)12N50P 500 12 0.50 30 0.75 P, A, I
IXTC26N50P 500 15 0.26 60 0.95 C†
IXT(1)16N50P 500 16 0.40 40 0.42 P, A, Q
IXT(1)22N50P(2) 500 22 0.27 50 0.35 V, Q
IXT(1)26N50P(2) 500 26 0.23 60 0.31 V, Q
IXT(1)30N50P(2) 500 30 0.20 72 0.27 V, H , Q , T
IXT(1)36N50P(2) 500 36 0.17 82 0.23 V, H , Q , T
IXT(1)1R4N60P 600 1.4 8 2 3 Y
IXT(1)2N60P 600 2 4.7 4 2.25 Y, P
IXT(1)3N60P 6 0 0 3 2 .8 8 1.8 Y, P, A
IXT(1)4N60P 6 0 0 4 1.9 1 2 1.5 P, A
IXT(1)5N60P 6 0 0 5 1.6 1 4 1.2 P, A
IXTP10N60PM 600 5 0.74 30 2.5 P..M
IXT(1)7N60P 600 7 1.10 2 0 1 P, A
IXT(1)10N60P 600 9 0.74 30 0.75 P, A, I
IXT(1)14N60P 600 14 0.55 40 0.42 P, A, Q
IXT(1)18N60P(2) 600 18 0.42 50 0.35 V, Q
IXT(1)22N60P(2) 600 22 0.33 60 0.31 V, Q
IXT(1)26N60P(2) 600 26 0.27 72 0.27 V, H , Q , T
IXT(1)30N60P(2) 600 30 0.24 82 0.23 V, H , Q , T
PolarHV™ 500V and 600V Standard and HiPerFET™ Power MOSFETs
supply applications. They are used
in demanding and high reliability IT
and telecom infrastructure
applications that require efficient
switching and energy conversion in
tight enclosures as well as products
where reduced size and weight are
important features.
PolarHT and PolarHV Power
MOSFETs are designed with a
proprietary cell design (patent
pending) and process improvements
that dramatically enhance the power
handling capability and system
efficiency . These design and process
changes provide „best-in-class“ on
resistance, gate charge, thermal
resistance and power handling
capability.
PolarHV™ – 500V and 600V HiPerFET Power MOSFET Table
Part Number V DSS I25 RDS(on) Qg RthJC Package
Min. Tc=25°C Tc=25°C Type
VA ΩΩ
ΩΩ
ΩnC °C/W
IXFC16N50P 500 10 0.44 40 1.25 C†
IXF(1)12N50P 500 12 0.50 3 0 0.75 P, A
IXFC26N50P 500 15 0.26 60 0.95 C†
IXF(1)16N50P 500 16 0.40 40 0.42 P, A, H
IXF(1)22N50P(2) 500 22 0.27 50 0.35 V, H
IXF(1)36N50P 500 23 0.19 82 0.6 C†, R†
IXF(1)26N50P(2) 500 26 0.23 60 0.31 V, H
IXFR44N50P 500 28 0.15 104 0.5 R†
IXF(1)30N50P(2) 500 30 0.20 72 0.27 V,H, T
IXF(1)36N50P(2) 500 36 0.17 82 0.23 V,H, T
IXFR64N50P 500 37 0.1 150 0.45 R†
IXF(1)44N50P 500 44 0.14 104 0.19 H, T, K
IXF(1)64N50P 500 64 0.10 150 0.15 X, K, N
IXFC14N60P 600 9 0.60 40 1.25 C†
IXF(1)10N60P 600 10 0.74 3 0 0.62 P, A
IXFC22N60P 600 13 0.36 60 0.95 C†
IXF(1)14N60P 600 14 0.55 40 0.42 P, A, H
IXF(1)18N60P(2) 600 18 0.42 50 0.35 V, H
IXF(1)30N60P 600 18 0.27 82 0.85 C†, R†
IXFR36N60P 600 20 0.21 103 0.60 R†
IXF(1)22N60P(2) 600 22 0.33 60 0.31 V, H
IXF(1)26N60P(2) 600 26 0.27 72 0.27 V,H, T
IXFR48N60P 600 27 0.15 150 0.50 R†
IXF(1)30N60P(2) 600 30 0.24 82 0.23 V,H, T
IXF(1)36N60P 600 36 0.19 103 0.19 H, T, K
IXF(1)48N60P 600 48 0.14 150 0.15 X, K, N
The PolarHV line is offered in 500V
and 600V versions plus 800V and
higher versions are in development.
This higher voltage product line
brings the same benefits of enhanced
performance and cost-effectiveness
to key market applications in the
mid-voltage range. Example
applications are off-line switch-
mode power supplies of all sizes,
from small wall socket style ranging
to rack mount power systems for
IT, UPS and Telecom applications.
Package type designations:
Letter
Symbol Package Type
A TO-263
C ISOPLUS220
H TO-247
I Leaded TO-263
K TO-264
N SOT-227B
P TO-220
P..M Overmolded TO-220
Q TO-3P
R ISOLPUS247
T TO-268
V PLUS220
X PLUS247
Y TO-252
Notes:
* - best estimated values; † - ISOPLUS package type. (1) Place holder in part number for package designator; (2) Add suffix letter ‘S’ to part number for Surface Mountable
PLUS220 package, e.g. IXTV22N50PS.
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