AOD2N60/AOU2N60
600V, 2A N-Channel MOSFET
General Description Product Summary
700V@150℃
I
D
(at V
GS
=10V) 2A
R
DS(ON)
(at V
GS
=10V) < 4.4Ω
100% UIS Tested!
100% R
g
Tested!
Symbol
V
DS
The AOD2N60 & AOU2N60 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V
DS
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Maximum
Drain-Source Voltage
600
G
D
S
G
D
G
D
Top View
TO252
DPAK
Bottom View
Top View
TO251
Bottom View
G
D
G
D
V
DS
V
GS
I
DM
I
AR
E
AR
E
AS
Peak diode recovery dv/dt dv/dt
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θCS
R
θJC
Maximum Junction-to-Ambient
A,G
T
C
=25°C
-55
Maximum
Thermal Characteristics Units
°C/W45
Parameter Typical
W
W/
o
C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
300 °C
Junction and Storage Temperature Range -50 to 150 °C
Power Dissipation
B
P
D
V±30Gate-Source Voltage
T
C
=100°C A
I
D
T
C
=25°C 2
1.4
V
Drain-Source Voltage
600
8Pulsed Drain Current
C
Continuous Drain
Current
B
mJ
Avalanche Current
C
60Repetitive avalanche energy
C
Derate above 25
o
C56.8
0.45
A2
Single plused avalanche energy
H
120 mJ
V/ns5
Maximum Case-to-sink
A
Maximum Junction-to-Case
D,F
°C/W
°C/W
1.8 0.5
2.2
Rev 6.0: March 2016
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Symbol Min Typ Max Units
600 700
BV
DSS
/∆TJ 0.56 V/
o
C
1
10
I
GSS
Gate-Body leakage current ±100 nΑ
V
GS(th)
Gate Threshold Voltage 3 4 4.5 V
R
DS(ON)
3.6 4.4 Ω
g
FS
3.5 S
V
SD
0.79 1 V
I
S
Maximum Body-Diode Continuous Current 2 A
I
SM
8 A
C
iss
215 270 325 pF
C
oss
23 29 35 pF
C
rss
2.2 2.8 3.4 pF
R
g
3.5 4.4 6.6 Ω
Q
g
9.5 11 nC
Q
gs
1.9 2 nC
Q
gd
4.7 6 nC
t
D(on)
17.2 21 ns
t
r
14.3 17 ns
t
D(off)
27
32
ns
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
Turn-Off DelayTime
V
GS
=10V, V
DS
=300V, I
D
=2A,
R
G
=25Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge V
GS
=10V, V
DS
=480V, I
D
=2A
Gate Source Charge
V
DS
=0V, V
GS
=±30V
I
DSS
Zero Gate Voltage Drain Current V
DS
=600V, V
GS
=0V
Gate Drain Charge
V
DS
=5V
I
D
=250µA
V
DS
=480V, T
J
=125°C
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=1A
Forward Transconductance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
BV
DSS
µA
V
Zero Gate Voltage Drain Current ID=250µA, VGS=0V
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance V
GS
=10V, I
D
=1A
Reverse Transfer Capacitance V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
DYNAMIC PARAMETERS
Turn-On Rise Time
Diode Forward Voltage
t
D(off)
27
32
ns
t
f
17 20 ns
t
rr
154 185 ns
Q
rr
0.8 0.96 µC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=2A,dI/dt=100A/µs,V
DS
=100V
Turn-Off DelayTime
G
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=2A,dI/dt=100A/µs,V
DS
=100V
A. The value of R θJA is measured with the device in a still air environment with TA =25°C.
B. The power dissipation PDis based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2A, VDD=150V, RG=10Ω, Starting TJ=25°C
Rev 6.0: March 2016
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0 5 10 15 20 25 30
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=5.5V
6V
10V
6.5V
0.1
1
10
2 4 6 8 10
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
-
55
°
C
VDS=40V
25°C
125
°
C
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0 1 2 3 4 5
RDS(ON) (Ω
Ω
Ω
Ω)
ID(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
VGS=10V
0
0.5
1
1.5
2
2.5
-100 -50 0 50 100 150 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
ID=1A
40
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
25°
125°C
ID=30A
25
°
125
°
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ(oC)
Figure 5: Break Down vs. Junction Temperature
Rev 6.0: March 2016
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 2 4 6 8 10 12 14
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VDS=480V
ID=2A
1
10
100
1000
0.1 1 10 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
0.01
0.1
1
10
1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
10
µ
s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
0
200
400
600
800
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
TJ(Max)=150°C
TC=25°C
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Case (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.2°C/W In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse T
on
T
P
D
Rev 6.0: March 2016
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 12: Power De-rating (Note B)
0.0
0.5
1.0
1.5
2.0
2.5
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°
°°
°C)
Figure 13: Current De-rating (Note B)
0
100
200
300
400
0.0001 0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
TJ(Max)=150°C
TA=25°C
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse T
on
T
P
D
Rev 6.0: March 2016
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-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
Vgs
Vds
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dtI
RM
rr
Vdd
Vdd
Q = - Idt
trr
Rev 6.0: March 2016
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