KST-9011-000 1
2N3906
PNP Silicon Transistor
Descriptions
• General small signal application
• Switching application
Features
• Low collector saturation v oltage
• Collector output capacitance
• Complementary pair with 2N3904
Ordering Information
Type NO. Marking Package Code
2N3906 2N3906 T0-92
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
4.5±0.1
4.5±0.1
0.4±0.02
1.27 Typ.
2.54 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.20±0.1
0.38
PIN Conne cti ons
1. Emitter
2. Bas e
3. Collector
14.0±0.40
KST-9011-000 2
2N3906
Absolute maximum ratings Ta=25°
°°
°C
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO -40 V
Collector-Emitter voltage VCEO -40 V
Emitter-base voltage VEBO -5 V
Collector current IC-200 mA
Collector dissipation PC625 mW
Junction temperature Tj150 °C
Storage temperature range Tstg -55~150 °C
Electrical Characteristics Ta=25°
°°
°C
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collec tor-Base breakdown voltage BVCBO IC=-10µA, IE=0 -40 - - V
Collector - Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -40 - - V
Emitter-Base break d own v olta ge BVEBO IE=-10µA, IC=0 -5 - - V
Collector cut-off current ICEX VCE=-30V, VEB=-3V - - -50 nA
DC current gain hFE VCE=-1V, IC=-10mA 100 - 300 -
Collec tor -Emitter s a turation voltage VCE(sat) IC=-50mA, IB=-5mA - - -0.4 V
Transition frequency fTVCE=-20V, IC=-10mA,
f=100MHz 250 - - MHz
Collec tor output capac itance Cob VCB=-5V, IE=0, f=1MHz - - 4.5 pF
Delay time td--35ns
Rise time tr
VCC=-3Vdc, VBE(off)=-0.5Vdc,
IC=-10mAdc, IB1=-1mAdc --35ns
Storage time ts- - 225 ns
Fall Time tf
VCC=-3Vdc,IC=-10mAdc,
IB1=IB2=-1mAdc --75ns
KST-9011-000 3
2N3906
Electrical Characteristic Curves
Fig. 3 VCE(sat)-IC
Fig. 2 hFE-IC
Fig. 1 PC-Ta
