AOT2918L/AOB2918L/AOTF2918L
100V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 90A
R
DS(ON)
(at V
GS
=10V) < 7mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
V
GS
The AOT2918L & AOB2918L & AOTF2918L uses Trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low
combination of R
DS(ON)
and C
rss
.
In addition, switching behavior is well controlled with a
soft recovery body diode.This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
100V
AOT2918L/AOB2918L AOTF2918L
Drain-Source Voltage 100
V
±2
0
Gate-Source Voltage
G
D
S
TO-263
D2PAK
GD
S
G
D
S
D
S
G
Top View
TO
-
220F
TO
-
220
AOTF2918LAOT2918L AOB2918L
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
58
70 45
260
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
0.56 60
3.6
W
T
A
=70°C 1.33
T
A
=25°C 2.1
Pulsed Drain Current
C
Continuous Drain
Current
G
W
T
C
=25°C
T
C
=100°C
Power Dissipation
B
P
D
A
T
A
=25°C I
DSM
267 41
133 20
13
90
35
Avalanche energy L=0.1mH
C
A
T
A
=70°C
Units
Junction and Storage Temperature Range -55 to 175 °C
Thermal Characteristics
Parameter AOT2918L/AOB2918L AOTF2918L
Continuous Drain
Current
61
Power Dissipation
A
P
DSM
I
D
15
V
±2
0
Gate-Source Voltage
Maximum Junction-to-Ambient
A
°C/W
R
θJA
15
60
T
C
=25°C
T
C
=100°C
mJ
Avalanche Current
C
10 A
Rev 2 : Feb 2011
www.aosmd.com Page 1 of 7
AOT2918L/AOB2918L/AOTF2918L
Symbol Min Typ Max Units
BV
DSS
100 V
V
DS
=100V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 2.7 3.3 3.9 V
I
D(ON)
260 A
5.6 7
T
J
=125°C 9 12
g
FS
34 S
V
SD
0.7 1 V
I
S
90 A
C
iss
2580 3430 pF
C
oss
1530 2035 pF
C
rss
37 63 pF
R
g
1.5 2.3 Ω
Q
g
(10V) 38 53 nC
Q
gs
12 nC
Q
gd
12 nC
t
D(on)
17 38 ns
t
r
24 53 ns
t
D(off)
30 66 ns
t
24
53
ns
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
Zero Gate Voltage Drain Current
mΩ
On state drain current V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Gate-Body leakage current V
DS
=V
GS，
I
D
=250µA
V
DS
=0V, V
GS
= ±20V
Forward Transconductance
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=50V, R
L
=2.5Ω,
R
GEN
=3Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
Diode Forward Voltage
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
V
GS
=10V, V
DS
=50V, I
D
=20A
Reverse Transfer Capacitance V
GS
=0V, V
DS
=50V, f=1MHz
Turn-On DelayTime
DYNAMIC PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
t
f
24
53
ns
t
rr
46 65 ns
Q
rr
230 320 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off Fall Time
I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PDis based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev2 : Feb 2011 www.aosmd.com Page 2 of 7
AOT2918L/AOB2918L/AOTF2918L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
20
40
60
80
100
2345678
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
2
4
6
8
10
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=10V
I
D
=20A
25°C
125
°
C
V
DS
=5V
VGS=10V
0
20
40
60
80
100
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6V
7V
10V
Vgs=5V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
4
8
12
16
20
5 6 7 8 9 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125
°
C
Rev2 : Feb 2011 www.aosmd.com Page 3 of 7
AOT2918L/AOB2918L/AOTF2918L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
1000
2000
3000
4000
5000
0 20 40 60 80 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
200
300
400
500
600
700
800
900
1000
0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Coss
C
rss
VDS=50V
ID=20A
TJ(Max)=175°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT2918L and AOB2918L (Note F)
10
µ
s
10ms
1ms
DC
RDS(ON)
TJ(Max)=175°C
TC=25°C
100
µ
s
40
for AOT2918L and AOB2918L (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2918L and AOB2918L (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Area for AOT2918L and AOB2918L (Note F)
RθJC=0.56°C/W
Rev2 : Feb 2011 www.aosmd.com Page 4 of 7
AOT2918L/AOB2918L/AOTF2918L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area for AOTF2918L
10
µ
s
10ms
1ms
DC
RDS(ON)
TJ(Max)=175°C
TC=25°C
100
µ
s
0
200
400
600
800
0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
for AOTF2918L (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=175°C
TC=25°C
RθJC=3.6°C/W
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2918L (Note F)
Rev2 : Feb 2011 www.aosmd.com Page 5 of 7
AOT2918L/AOB2918L/AOTF2918L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
50
100
150
200
250
300
0 25 50 75 100 125 150 175
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 13: Power De-rating (Note F)
0
20
40
60
80
100
0 25 50 75 100 125 150 175
Current rating ID(A)
TCASE (°
°°
°C)
Figure 14: Current De
-
rating (Note F)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction
-
to
-
TA=25°C
10
100
1 10 100
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
40
0.001
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 14: Current De
-
rating (Note F)
Figure 15: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
RθJA=60°C/W
Rev2 : Feb 2011 www.aosmd.com Page 6 of 7
AOT2918L/AOB2918L/AOTF2918L
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev2 : Feb 2011 www.aosmd.com Page 7 of 7
