CPH6311 Ordering number : EN6794A SANYO Semiconductors DATA SHEET CPH6311 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features * * * Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 Gate-to-Source Voltage VGSS 10 V --5 A Drain Current (DC) ID Drain Current (Pulse) IDP V PW10s, duty cycle1% --20 A Mounted on a ceramic board (900mm20.8mm) 1.6 W Allowable Power Dissipation PD 2.0 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Mounted on a FR4 board PW5S Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : JM Symbol V(BR)DSS IDSS IGSS Conditions ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS(off) yfs VGS=8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--3A RDS(on)1 RDS(on)2 ID=--3A, VGS=--4.5V ID=--1A, VGS=--2.5V Ratings min typ Unit max --20 V --0.4 5.8 --1 A 10 A --1.4 V 8.5 S 32 42 m 46 60 m Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32807PE TI IM TC-00000618 / D2500 TS IM TA-3168 No.6794-1/4 CPH6311 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Ratings Conditions min typ VDS=--10V, f=1MHz VDS=--10V, f=1MHz Unit max 1230 pF 200 pF VDS=--10V, f=1MHz See specified Test Circuit. 170 pF 17 ns ns Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr td(off) See specified Test Circuit. 100 See specified Test Circuit. 100 ns tf See specified Test Circuit. 95 ns 31 nC 2.8 nC Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--5A VDS=--10V, VGS=--10V, ID=--5A Gate-to-Drain "Miller" Charge Qgd VDS=--10V, VGS=--10V, ID=--5A Diode Forward Voltage VSD IS=--5A, VGS=0V 4.2 nC --0.83 Package Dimensions --1.5 V Switching Time Test Circuit unit : mm (typ) 7018A-003 VDD= --10V VIN 0.15 0.6 2.9 5 4 ID= --3A RL=3.3 VIN D 0.05 1.6 2.8 0.2 6 0V --4.5V VOUT PW=10s D.C.1% 2 0.95 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.4 0.9 0.2 0.6 G 1 CPH6311 P.G 50 S SANYO : CPH6 ID -- VDS ID -- VGS --8 VDS= --10V --3.0V --7 --3 --2 --25 --1 --1 VGS= --1.0V 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 25 C --2 --4 C --3 --5 5C --1.5V --6 Ta= 7 --2. 0 --4 Drain Current, ID -- A --2.5V --4.5V Drain Current, ID -- A --5 V --4.0V --3.5 V --6 0 --1.0 IT02276 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Gate-to-Source Voltage, VGS -- V --1.6 --1.8 IT02277 No.6794-2/4 CPH6311 RDS(on) -- VGS 140 RDS(on) -- Tc 140 Static Drain-to-Source On-State Resistance, RDS(on) -- m --3.0A 80 ID= --1.0A 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 Ta= C --25 C 25 75C 1.0 7 5 3 2 0.1 7 5 3 2 --20 0 20 40 60 80 100 120 140 160 IT02279 IS -- VSD --10 7 5 3 2 VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.001 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Diode Forward Voltage, VSD -- V IT02280 SW Time -- ID 1000 7 5 --1.0 IT02281 Ciss, Coss, Crss -- VDS 10000 VDD= --10V VGS= --4.5V f=1MHz 7 5 3 2 td(off) 100 7 5 tf tr 3 2 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --40 --0.01 7 5 3 2 0.01 --0.01 td(on) 10 7 5 2 Ciss 1000 7 5 3 3 2 Coss 2 Crss 1.0 --0.1 100 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 7 0 --10 --100 7 5 3 2 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 25 Total Gate Charge, Qg -- nC --4 30 35 IT02284 --6 --8 --10 --12 --14 --16 --18 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --5A --9 --2 IT02282 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V 20 Ambient Temperature, Ta -- C VDS= --10V 10 7 5 3 2 40 IT02278 yfs -- ID 100 7 5 3 2 = --2.5V .0A, V GS 1 -= ID --4.5V A, V GS= I D= --3.0 60 0 --60 --10 Source Current, IS -- A Forward Transfer Admittance, yfs -- S Gate-to-Source Voltage, VGS -- V 80 5C 60 100 --25 C 100 120 25 C 120 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C --10 7 5 3 2 ASO IDP= --20A ID= --5A --1.0 7 5 3 2 --0.1 7 5 3 2 --20 IT02283 PW10s 1m 100s s 10 ms 10 0m s DC op Operation in era tio this area is n limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT02285 No.6794-3/4 CPH6311 PD -- Ta M 1.6 1.5 ou nt ed on ac er am ic 1.0 bo ar d( PD -- Ta 2.5 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.0 90 0m m2 0 0.5 .8m m ) 2.0 M ou nt 1.5 ed on aF R4 bo ar 1.0 dP W 5 S 0.5 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT02286 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 IT02642 Note on usage : Since the CPH6311 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2007. Specifications and information herein are subject to change without notice. PS No.6794-4/4