CPH6311-TL-E - SANYO Semiconductor (U.S.A) Corporation

CPH6311

No.6794-1/4

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : EN6794A

CPH6311 P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

SANYO Semiconductors

DATA SHEET

Features

•Low ON-resistance.

•Ultrahigh-speed switching.

•2.5V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage VDSS --20 V

Gate-to-Source Voltage VGSS ±10 V

Drain Current (DC) ID--5 A

Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --20 A

Allowable Power Dissipation PDMounted on a ceramic board (900mm2✕0.8mm) 1.6 W

Mounted on a FR4 board PW≤5S 2.0 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --20 V

Zero-Gate Voltage Drain Current IDSS VDS=--20V, VGS=0V --1µA

Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 µA

Cutoff Voltage VGS(off) VDS=--10V, ID=-- 1mA -- 0.4 -- 1.4 V

Forward T ransfer Admittance yfsVDS=--10V, ID=--3A 5.8 8.5 S

RDS(on)1 ID=--3A, VGS=--4.5V 32 42 mΩ

Static Drain-to-Source On-State Resistance

RDS(on)2 ID=--1A, VGS=--2.5V 46 60 mΩ

Marking : JM Continued on next page.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

s products or

equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

32807PE TI IM TC-00000618 / D2500 TS IM TA-3168

CPH6311

No.6794-2/4

Continued from preceding page.

Ratings

Parameter Symbol Conditions min typ max Unit

Input Capacitance Ciss VDS=--10V, f=1MHz 1230 pF

Output Capacitance Coss VDS=--10V, f=1MHz 200 pF

Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 170 pF

Turn-ON Delay Time td(on) See specified Test Circuit. 17 ns

Rise T ime trSee specified Test Circuit. 100 ns

Turn-OFF Delay Time td(off) See specified Test Circuit. 100 ns

Fall T ime tfSee specified Test Circuit. 95 ns

Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--5A 31 nC

Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--5A 2.8 nC

Gate-to-Drain “Miller” Charge Qgd VDS=-- 10V, VGS=--10V, ID=--5A 4.2 nC

Diode Forward Voltage VSD IS=--5A, VGS=0V -- 0.83 -- 1.5 V

Package Dimensions Switching Time Test Circuit

unit : mm (typ)

7018A-003

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

SANYO : CPH6

321

645

2.9

0.05

0.4

2.8

1.6

0.2

0.6 0.6

0.9

0.2

0.15

0.95

PW=10µs

D.C.≤1%

P.G 50Ω

ID= --3A

RL=3.3Ω

VDD= --10V

VOUT

CPH6311

VIN

--4.5V

VIN

0--0.2

--1

--2

--3

--4

--5

--6

--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9

Drain-to-Source Voltage, VDS -- V

ID -- VDS

Drain Current, ID -- A

VGS= --1.0V

--4.5V

IT02276

0--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8

--1

--2

--3

--4

--5

--6

--7

--8

Gate-to-Source Voltage, VGS -- V

ID -- VGS

Drain Current, ID -- A

VDS= --10V

Ta=75

IT02277

--4.0V

--3.5V

--3.0V

--2.5V

--1.5V

--2.0V

--25

25°C

CPH6311

No.6794-3/4

100

1000

--0.1

--1.0

--0.01

--10

--0.1--0.01 --1.0 23 5723 5723 57 --10

0--2--4--6 --8 --10 --12 --14 --16 --18 --20

23 57 23 57 23 57

--0.1 --1.0

23 57

--0.01 --10 --100

--1

--2

--3

--4

--5

--6

--7

--8

051015 20 25 30 35

--9

--10

Total Gate Charge, Qg -- nC

VGS -- Qg

Gate-to-Source Voltage, VGS -- V

VDS= --10V

ID= --5A

IT02284

A S O

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

IDP= --20A

--10

--1.0

--100

--0.1

--0.01

IT02285

100µs

Operation in

this area is

limited by RDS(on).

Ta=25°C

Single pulse

Mounted on a ceramic board (900mm

✕0.8mm)

100

1000

10000

Drain-to-Source Voltage, VDS -- V

Ciss, Coss, Crss -- VDS

Ciss, Coss, Crss -- pF

f=1MHz

Ciss

Coss

Crss

IT02283

--0.1

1.0 --1.0

23 57 23 57

--10

Drain Current, ID -- A

SW Time -- ID

Switching Time, SW Time -- ns

VDD= --10V

VGS= --4.5V

td(on)

td(off)

IT02282

Drain Current, ID -- A

IT02280

0.01

1.0

0.1

100

Forward T ransfer Admittance, yfs -- S

yfs -- ID

VDS= --10V

Ta= --25°C

IT02281

0--0.4--0.3--0.2--0.1 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0

--0.001

Diode Forward Voltage, VSD -- V

Source Current, IS -- A

IS -- VSD

VGS=0V

--25

25°C

Ta=75

ID= --5A

100ms

DC operation

1ms

10ms

PW≤10µs

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

100

120

140

0--1--2--3 --4 --5 --6 --7 --8 --9 --10

Gate-to-Source Voltage, VGS -- V

Ta=25°C

IT02278

Ambient Temperature, Ta -- °C

IT02279

--60

100

120

140

--40 --20 0 20 40 60 80 100 120 160140

--3.0A

ID= --1.0A

ID= --1.0A, VGS= --2.5V

ID= --3.0A, VGS= --4.5V

RDS(on) -- VGS RDS(on) -- Tc

CPH6311

No.6794-4/4

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using

products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.

products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all

semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or

malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise

to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt

safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not

limited to protective circuits and error prevention circuits for safe design, redundant design, and structural

design.

Upon using the technical information or products described herein, neither warranty nor license shall be granted

with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third

party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's

intellctual property rights which has resulted from the use of the technical information and products mentioned

above.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are

controlled under any of applicable local export control laws and regulations, such products may require the

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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

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without the prior written consent of SANYO Semiconductor Co.,Ltd.

Note on usage : Since the CPH6311 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

020 40

0.5

1.0

80 100 120

1.5

1.6

2.0

140 160

Ambient Temperature, Ta -- °C

PD -- Ta

Allowable Power Dissipation, PD -- W

IT02286

Mounted on a ceramic board (900mm

✕0.8mm)

020 40

0.5

1.0

80 100 120

1.5

2.0

2.5

140 160

Ambient Temperature, Ta -- °C

PD -- Ta

Allowable Power Dissipation, PD -- W

IT02642

Mounted on a FR4 board PW≤5S

This catalog provides information as of March, 2007. Specifications and information herein are subject

to change without notice.