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6MBI300V-120-50 IGBT Modules
IGBT MODULE (V series)
1200V / 300A / 6 in one package
Features
Compact Package
P.C.Board Mount
Low VCE (sat)
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)
Items Symbols Conditions Maximum
ratings Units
Inverter
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Collector current
Ic Continuous Tc=80°C 300
A
Icp 1ms Tc=80°C 600
-Ic 300
-Ic pulse 1ms 600
Collector power dissipation Pc 1 device 1600 W
Junction temperature Tj 175
°COperation temperature Top 150
Storage temperature Tstg -40 to +125
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso AC : 1min. 2500 VAC
Screw torque Mounting (*3) - 3.5 N m
Terminals (*4) - 4.5
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
Note *4: Recommendable value : 3.5-4.5 Nm (M6)
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IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items Symbols Conditions Characteristics Units
min. typ. max.
Inverter
Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 3.0 mA
Gate-Emitter leakage current IGES VGE = 0V, VGE = ±20V - - 600 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 300mA 6.0 6.5 7.0 V
Collector-Emitter saturation voltage
VCE (sat)
(terminal)
VGE = 15V
IC = 300A
Tj=25°C - 2.20 2.65
V
Tj=125°C - 2.50 -
Tj=150°C - 2.55 -
VCE (sat)
(chip)
VGE = 15V
IC = 300A
Tj=25°C - 1.75 2.20
Tj=125°C - 2.05 -
Tj=150°C - 2.10 -
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 27 - nF
Turn-on time
ton
VCC = 600V
IC = 300A
VGE = +15V
RG = 0.93Ω
- 550 1200
µs
tr - 180 600
tr (i) - 120 -
Turn-off time toff - 1050 2000
tf - 110 350
Forward on voltage
VF
(terminal)
VGE = 0V
IF = 300A
Tj=25°C - 2.15 2.60
V
Tj=125°C - 2.30 -
Tj=150°C - 2.25 -
VF
(chip)
VGE = 0V
IF = 300A
Tj=25°C - 1.70 2.15
Tj=125°C - 1.85 -
Tj=150°C - 1.80 -
Reverse recovery time trr IF = 300A - 200 600 µs
Thermistor
Resistance RT = 25°C - 5000 - Ω
T = 100°C 465 495 520
B value B T = 25 / 50°C 3305 3375 3450 K
Thermal resistance characteristics
Items Symbols Conditions Characteristics Units
min. typ. max.
Thermal resistance (1device)(*5) Rth(j-c) Inverter IGBT - - 0.094
°C/WInverter FWD - - 0.150
Contact thermal resistance (1device) (*6) Rth(c-f) with Thermal Compound - 0.0167 -
Note *5: This value is including margins. This will be revised in future.
Note *6: This is the value which is dened mounting on the additional cooling n with thermal compound.
Equivalent Circuit Schematic
[ Inverter ] [ Thermistor ]
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IGBT Modules
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6MBI300V-120-50
Characteristics (Representative)
[INVERTER][INVERTER]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
Vge= 0V, ƒ= 1MHz, Tj= 25°C
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=300A, Tj= 25°C
[INVERTER] [INVERTER]
[INVERTER] [INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Vge= 15V / chip
1
10
100
0 10 20 30
Collector-Emitter voltage: Vce [V]
Gate Capacitance: Cies, Coes, Cres [nF]
***
Cies
Coes
Cres
0
100
200
300
400
500
600
700
012345
Collector-Emitter voltage: Vce [V]
Collector current: Ic [A]
Vge=20V
15V
12V
10V
8V
0
100
200
300
400
500
600
700
0 1 2 3 4 5
Collector-Emitter voltage: Vce [V]
Collector current: Ic [A]
Vge= 20V
15V
12V
10V
8V
0
100
200
300
400
500
600
700
012345
Collector-Emitter Voltage: Vce [V]
Collector Current: Ic [A]
125°C
Tj=25°C
150°C
0
2
4
6
8
10
5 10 15 20 25
Gate-Emitter Voltage: Vge [V]
Collector-Emitter Voltage: Vce [V]
Ic=600A
Ic=300A
Ic=150A
0 500 1000 1500 2000 2500 3000 3500
Gate charge: Qg [nC]
Collector-Emitter voltage: Vce [200V/div]
Gate-Emitter voltage: Vge [5V/div]
Vge Vce
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IGBT Modules
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=300A, Vge=±15V, Tj=125°C, 150°C
[INVERTER] [INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, Vge=±15V, Rg=0.93Ω, Tj=25°C Vcc=600V, Vge=±15V, Rg=0.93Ω, Tj=125°C, 150°C
[INVERTER] [INVERTER]
Reverse bias safe operating area (max.)
+Vge=15V, -Vge≤15V, Rg≥0.93Ω, Tj=150°C
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=300A, Vge=±15V, Tj=25°C
Switching loss vs. Collector current (typ.)
Vcc=600, Vge=±15V, Rg=0.93Ω, Tj=125°C, 150°C
Switching time vs. Collector current (typ.)
[INVERTER] [INVERTER]
10
100
1000
10000
0 100 200 300 400 500 600 700
Collector current: Ic [A]
Switching time: ton, tr, toff, tf [nsec]
tf
tr
toff
ton
10
100
1000
10000
0 100 200 300 400 500 600 700
Collector current: Ic [A]
Switching time: ton, tr, toff, tf [nsec]
tf
tr
toff
ton
Tj=125
o
C
Tj=150
o
C
10
100
1000
10000
0.1 1 10 100
Gate resistance: Rg [Ω]
Switching time: ton, tr, toff, tf [nsec]
tf
tr
toff
ton
0
20
40
60
80
100
0 100 200 300 400 500 600 700
Collector current: Ic [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
Eon
Eoff
Err
Tj=125
o
C
Tj=150
o
C
0
50
100
150
0 1 10 100
Gate resistance: Rg [Ω]
Switching loss: Eon, Eoff, Err [mJ/pulse]
Eoff
Err
Eon
Tj=125
o
C
Tj=150
o
C
0
200
400
600
800
0 500 1000 1500
Collector-Emitter voltage: Vce [V]
Collector current: Ic [A]
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6MBI300V-120-50
Temperature characteristic (typ.)
[INVERTER] [INVERTER]
Transient Thermal Resistance (max.)
[INVERTER]
Forward Current vs. Forward Voltage (typ.)
chip
[THERMISTOR]
Reverse Recovery Characteristics (typ.)
Vcc=600V, Vge=±15V, Rg=0.93Ω, Tj=125°C, 150°C
Reverse Recovery Characteristics (typ.)
Vcc=600V, Vge=±15V, Rg=0.93Ω, Tj=25°C
0
100
200
300
400
500
600
700
0 1 2 3
Forward on voltage: Vf [V]
Forward current: If [A]
125°C
Tj=25°C
150°C
10
100
1000
10000
0 100 200 300 400 500 600 700
Forward current: If [A]
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Irr
trr
0.001
0.01
0.1
1
0.001 0.01 0.1 1
Pulse Width : Pw [sec]
Thermal resistanse: Rth(j-c) [°C/W] ***
FWD
IGBT
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
Temperature [°C]
Resistance : R [kΩ]
10
100
1000
10000
0 100 200 300 400 500 600 700
Forward current: If [A]
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Irr
trr
Tj=125
o
C
Tj=150
o
C
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IGBT Modules
WARNING
1. This Catalog contains the product specications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specications.
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express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd.
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warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, re, or other problem if any of the products
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Outline Drawings, mm