© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 13
1Publication Order Number:
MJE243/D
MJE243 - NPN,
MJE253 - PNP
Complementary Silicon
Power Plastic Transistors
These devices are designed for low power audio amplifier and
low−current, high−speed switching applications.
Features
•High Collector−Emitter Sustaining Voltage −
VCEO(sus) = 100 Vdc (Min)
•High DC Current Gain @ IC = 200 mAdc
hFE = 40−200
= 40−120
•Low Collector−Emitter Saturation Voltage −
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
•High Current Gain Bandwidth Product −
fT= 40 MHz (Min) @ IC = 100 mAdc
•Annular Construction for Low Leakages
ICBO = 100 nAdc (Max) @ Rated VCB
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 100 Vdc
Collector−Base Voltage VCB 100 Vdc
Emitter−Base Voltage VEB 7.0 Vdc
Collector Current − Continuous
− Peak
IC4.0
8.0
Adc
Base Current IB10 Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD15
120
W
mW/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD1.5
12
W
mW/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to +150 _C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case qJC 8.34 _C/W
Thermal Resistance,
Junction−to−Ambient
qJA 83.4 _C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MJE243 TO−225 500 Units/Box
4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 15 WATTS
http://onsemi.com
MJE243G TO−225
(Pb−Free)
500 Units/Box
TO−225
CASE 77
STYLE 1
21
3
MARKING DIAGRAM
YWW
JE2x3G
Y = Year
WW = Work Week
JE2x3 = Device Code
x = 4 or 5
G=Pb−Free Package
Preferred devices are recommended choices for future use
and best overall value.
MJE253 TO−225 500 Units/Box
MJE253G TO−225
(Pb−Free)
500 Units/Box
MJE243 − NPN, MJE253 − PNP
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0)
VCEO(sus) 100 −V
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCE = 100 Vdc, IE = 0, TC = 125_C)
ICBO
−
−
0.1
0.1
mA
mA
Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO −0.1 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
40
15
180
−
−
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
−
−
0.3
0.6
V
Base−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 200 mAdc)
VBE(sat) −1.8 V
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on) −1.5 V
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT40 −MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob −50 pF
MJE243 − NPN, MJE253 − PNP
http://onsemi.com
3
16
20
Figure 1. Power Derating
T, TEMPERATURE (°C)
040 60 100 120 160
12
PD, POWER DISSIPATION (WATTS)
1.6
0
1.2
8.0 0.8
4.0 0.4
80 140
TC
PD, POWER DISSIPATION (WATTS)
TA
Figure 2. Switching Time Test Circuit
+11 V
25 ms
0
-9.0 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
1K
IC, COLLECTOR CURRENT (AMPS)
VCC = 30 V
IC/IB = 10
TJ = 25°C
t, TIME (ns)
500
300
200
100
50
td
30
20
10
5
1
0.01 0.03 0.05 0.50.20.1 0.3 10
Figure 3. Turn−On Time
3
2
5213
tr
NPN MJE243
PNP MJE253
0.02
t, TIME (ms)
0.01
0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL RESISTANCE
qJC(t) = r(t) qJC
qJC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0 (SINGLE PULSE)
(NORMALIZED)
Figure 4. Thermal Response
0.5 D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.1
0.02
0.01
MJE243 − NPN, MJE253 − PNP
http://onsemi.com
4
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
30
0.01
0.05
Figure 5. Active Region Safe Operating Area
500ms
dc
5.0
20107.05.03.02.01.0
100ms
TJ = 150°C
IC, COLLECTOR CURRENT (AMP)
0.2
0.5
1.0
2.0
0.02
1.0ms
1007050
5.0ms
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
MJE243/MJE253
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
IC, COLLECTOR CURRENT (AMPS)
10
5K
3K
2K
1K
500
300
200
100
50
Figure 6. Turn−Off Time
t, TIME (ns)
30
20
0.01 0.03 0.05 0.50.2
0.02 0.1 0.3 105213
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
VR, REVERSE VOLTAGE (VOLTS)
10 100
100
200
50
Figure 7. Capacitance
70
5020107.05.03.01.0
C, CAPACITANCE (pF)
2.0
TJ = 25°C
Cib
Cob
MJE243 (NPN)
MJE253 (PNP)
30
NPN MJE243
PNP MJE253
20
7030
MJE243 − NPN, MJE253 − PNP
http://onsemi.com
5
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
Figure 8. DC Current Gain
Figure 9. “On” Voltages
IC, COLLECTOR CURRENT (AMP)
200
500
0.06 0.1 0.4 4.00.04
100
70
50
20
0.2
IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
5.0 1.0 2.00.6
25°C
TJ = 150°C
-55°C
0.04
IC, COLLECTOR CURRENT (AMP)
1.4
1.2
0.8
0.4
0
TJ = 25°C
V, VOLTAGE (VOLTS)
NPN
MJE243
PNP
MJE253
100
200
70
50
30
20
2.0
hFE, DC CURRENT GAIN
25°C
TJ = 150°C
-55°C
VCE = 1.0 V
VCE = 2.0 V
V, VOLTAGE (VOLTS)
VCE(sat)
VBE @ VCE = 1.0 V
qVB FOR VBE
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
IC/IB = 10
VBE @ VCE = 1.0 V
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.5
+2.0
+1.5
+1.0
0
-0.5
-1.0
-1.5
-2.0
+0.5
-2.5
*APPLIES FOR IC/IB ≤ hFE/3
25°C to 150°C
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.5
+2.0
+1.5
+1.0
0
-0.5
-1.0
-1.5
-2.0
+0.5
-2.5
*APPLIES FOR IC/IB ≤ hFE/3
25°C to 150°C
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
VCE = 1.0 V
VCE = 2.0 V
7.0
10
30
300
0.06 0.1 0.4 4.00.2 1.0 2.00.6
0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6
0.06 0.1 0.4 4.00.04 0.2 1.0 2.00.6
0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6
0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6
1.0
0.6
0.2
1.4
1.2
0.8
0.4
1.0
0.6
0.2
3.0
5.0
7.0
10
5.0
IC/IB = 10
VCE(sat)
5.0
VBE(sat) @ IC/IB = 10
*qVC FOR VCE(sat)
qVB FOR VBE
*qVC FOR VCE(sat)
MJE243 − NPN, MJE253 − PNP
http://onsemi.com
6
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077-01 THRU -08 OBSOLETE, NEW STANDARD
077-09.
−B−
−A−M
K
FC
Q
H
V
G
S
D
J
R
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 --- 1.02 ---
__
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MJE243/D
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