DSI45-08A
A s
A s
Standard Rectifier
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
480
IA
V
F
1.28
R0.55 K/W
V
R
=
13
min.
45
t = 10 ms
Applications:
V
RRM
V800
20T
VJ
V°C=
T
VJ
°C=mA3
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
= 130°C
d =
P
tot
270 WT
C
°C=
T
VJ
175 °C-40
V
I
RRM
=
=800
45
45
T
VJ
=45°C
DSI45-08A
V
A
800
V800
25
25
25
max. repetitiv e rev erse voltage
reverse c urrent
forward v olt age
virtual junc t i on t emperature
total power dis sipation
max. forward surge current
Conditions Unit
1.37
T
VJ
°C=25
C
J
18
j
unction c apac it ance
V= V;400 T
150
V
F0
V0.81T
VJ
= 175°C
r
F
9.1 Ω
f = 1 MHz = °C25
m
V1.23T
VJ
=°C
I
F
=A
V
45
1.35
I
F
=A90
I
F
=A90
threshold volt age
slope resistance for power loss calculation only
Backside: cathode
518 A
T
VJ
= 150°C
I t T=45°C
value for fus i ng
T = 150°C
2
A408
441 A
V
R
= 0 V
V
R
= 0 V
V= 0 V
V= 0 V
(50 Hz), sine
t = 8,3 ms
(60 Hz), sine
t = 10 ms
(50 Hz), sine
t = 8,3 ms
(60 Hz), sine
t = 10 ms
(50 Hz), sine
t = 8,3 ms
(60 Hz), sine
t = 10 ms
(50 Hz), sine
t = 8,3 ms
(60 Hz), sine
V
F
=1.23
V
● Housing:
Single Diode
TO-247
●rIndustry standard outlin
e
●rEpoxy meets UL 94V-0
●rRoHS compliant
VJ
R
VJ
R
RVJ
µA
pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
FAV
average forw ard current
FAV
150
1152
1120
832
808
2
2
2
A s
A s
2
IXYS reserves the right to change limits, conditions and dimensions. 20090529a
Data according to IEC 60747and per diode unless otherwise specified
© 2009 IXYS all rights reserved
http://store.iiic.cc/
DSI45-08A
I
RMS
Aper pin 70
R
thCH
K/W0.25
M
D
Nm1.2
mounting torque
0.8
T
stg
°C150
storage temperat ure
-55
Weight g6
Symbol Definition Ratings
typ. max.min.Conditions
RMS c urrent
thermal resist anc e case to heat s i nk
Unit
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
F
C
N120
mounting force wi t h c lip
20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
DSI45-08A 471887Tube 30
XXXXXX
YYWW
Logo
Marking on product
DateCode
Assembly Code
abcdef
Product Marking
DSI45-12A
DSI45-16A
DSI45-16AR
TO-247AD (2)
TO-247AD (2)
ISOPLUS247 (2)
Similar Part Package
1)
1
)
Marking on Product
DSI45-08A
1200
1600
1600
Voltage class
RMS
IXYS reserves the right to change limits, conditions and dimensions. 20090529a
Data according to IEC 60747and per diode unless otherwise specified
© 2009 IXYS all rights reserved
http://store.iiic.cc/
DSI45-08A
C
E
F
D
B
A
K
G
H
J
L
N
M
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20090529a
Data according to IEC 60747and per diode unless otherwise specified
© 2009 IXYS all rights reserved
http://store.iiic.cc/
DSI45-08A
0.001 0.01 0.1 1
0
100
200
300
400
500
23456789110
10
2
10
3
10
4
0.00.40.81.21.6
0
10
20
30
40
50
60
70
0 10203040
0
20
40
60
80
100
0 20 40 60 80 100 120 140 160
0.001 0.01 0.1 1 10
0.0
0.2
0.4
0.6
0 20 40 60 80 100 120 140 160
0
10
20
30
40
50
DSI45
I
F
[A]
V
F
[V]
I
FSM
[A]
t [s]
I
2
t [A
2
s]
t [ms]
P
tot
[W]
I
F(AV)M
[A] T
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current & ambient temperature, sine 180° Fig. 5 Max. forward current versus
case temperature, sine180°
Fig. 6 Transient thermal impedance junction to case
t [s]
Constants for Z
thJC
calculation:
i R
thi
(K/W) t
i
(s)
1 0.1633 0.016
2 0.2517 0.118
3 0.0933 0.588
4 0.04167 2.6
IXYS reserves the right to change limits, conditions and dimensions. 20090529a
Data according to IEC 60747and per diode unless otherwise specified
© 2009 IXYS all rights reserved
http://store.iiic.cc/
