DSI45-08A VRRM = I FAV = VF = Standard Rectifier Single Diode 800 V 45 A 1.23 V Part number DSI45-08A 3 1 Backside: cathode Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Housing: TO-247 Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant Ratings VF IFAV forward voltage average forward current VF0 threshold voltage rF slope resistance RthJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current min. VR = 800 V 20 A VR = 800 V TVJ = 150 C 3 mA IF = 45 A TVJ = 25 C IF = 90 A IF = 45 A IF = 90 A rectangular TVJ = 150 C d = 0.5 for power loss calculation only t = 10 ms (50 Hz), sine (60 Hz), sine junction capacitance IXYS reserves the right to change limits, conditions and dimensions. 1.28 V 1.37 V V 1.35 V TC = 130C 45 A TVJ = 175C 0.81 V 9.1 m 0.55 K/W 175 C TC = 25 C 270 W TVJ = 45C 480 A VR = 0 V 518 A TVJ = 150C 408 A 441 A t = 10 ms (50 Hz), sine TVJ = 45C 1152 A2 s t = 8,3 ms (60 Hz), sine VR = 0 V 1120 A2 s t = 10 ms (50 Hz), sine TVJ = 150C 832 A2 s t = 8,3 ms (60 Hz), sine VR = 0 V 808 A2 s VR = 400 V; f = 1 MHz TVJ = 25 C t = 8,3 ms CJ V 1.23 -40 t = 10 ms (50 Hz), sine value for fusing Unit max. 800 t = 8,3 ms I 2t typ. TVJ = 25 C TVJ = 25 C (60 Hz), sine VR = 0 V Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 18 pF 20090529a DSI45-08A Ratings Symbol Definition Conditions I RMS RMS current per pin R thCH thermal resistance case to heatsink Tstg storage temperature min. max. Unit 70 0.25 -55 Weight A K/W 150 C 6 MD mounting torque FC mounting force with clip 1) typ. 1) g 0.8 1.2 Nm 20 120 N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Logo Marking on product DateCode Assembly Code Ordering Standard abcdef YYWW XXXXXX Part Name DSI45-08A Similar Part DSI45-12A DSI45-16A DSI45-16AR IXYS reserves the right to change limits, conditions and dimensions. Marking on Product DSI45-08A Package TO-247AD (2) TO-247AD (2) ISOPLUS247 (2) Delivering Mode Tube Base Qty Code Key 30 471887 Voltage class 1200 1600 1600 Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090529a DSI45-08A Outlines TO-247 L B E F C A H D G J K IXYS reserves the right to change limits, conditions and dimensions. M N Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.216 0.212 0.244 G H 1.65 - 2.13 4.5 0.065 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.055 0.426 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090529a DSI45-08A 70 104 500 60 400 2 200 103 2 30 300 I t [A s] 40 IFSM [A] IF [A] 50 20 100 10 0 0.0 0.4 0.8 1.2 VF [V] 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time per diode 100 50 80 40 60 30 IF(AV)M [A] Ptot [W] 102 0 0.001 1.6 40 20 20 10 0 0 0 10 20 30 40 0 20 40 IF(AV)M [A] 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tamb [C] TC [C] Fig. 4 Power dissipation vs. direct output current & ambient temperature, sine 180 Fig. 5 Max. forward current versus case temperature, sine180 ZthJC [K/W] 0.6 Constants for ZthJC calculation: 0.4 i 0.2 0.0 0.001 Rthi (K/W) ti (s) 1 0.1633 0.016 2 0.2517 0.118 3 0.0933 0.588 4 0.04167 2.6 DSI45 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090529a