CDD60 Diode-Diode Modules 1 2 3 3 Dimensions in mm (1mm=0.0394") Type 1 2 Symbol IFRMS IFAVM VRSM V 900 1300 1500 1700 1900 CDD60N08 CDD60N12 CDD60N14 CDD60N16 CDD60N18 VRRM V 800 1200 1400 1600 1800 Test Conditions TVJ=TVJM TC=100oC; 180o sine Maximum Ratings Unit 100 60 A IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 1150 1300 1000 1200 A i2dt TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 6600 7000 5000 5950 A2s -40...+150 150 -40...+125 TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s Mounting torque (M5) Terminal connection torque (M5) Typical including screws o C 3000 3600 V~ 2.5-4/22-35 2.5-4/22-35 Nm/lb.in. 90 g DEECorp. http://store.iiic.cc/ CDD60 Diode-Diode Modules Symbol IR Test Conditions TVJ=TVJM; VR=VRRM o Characteristic Values Unit 10 mA VF IF=200A; TVJ=25 C 1.60 V VTO For power-loss calculations only 0.8 V TVJ=TVJM 4.3 m o 90 uC 11 A rT QS TVJ=125 C; IF=50A; -di/dt=0.64A/us IRM RthJC per diode; DC current per module 0.59 0.295 K/W RthJK per diode; DC current per module 0.79 0.395 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 FEATURES APPLICATIONS ADVANTAGES * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits DEECorp. http://store.iiic.cc/ CDD60 Diode-Diode Modules Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load DEECorp. http://store.iiic.cc/ CDD60 Diode-Diode Modules Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.59 0.61 0.63 0.66 0.70 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.012 0.045 0.533 0.0012 0.095 0.455 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.79 0.81 0.83 0.86 0.90 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.012 0.045 0.533 0.2 0.0012 0.095 0.455 0.495 DEECorp. http://store.iiic.cc/