C220011207 - AMPHENOL - Product.Network

123

TO-220

TAB

D(2, TAB)

G(1)

S(3) AM01475V1

Features

Order code VDS RDS(on) max. IDPTOT

STP26N65DM2 650 V 0.190 Ω 20 A 170 W

• Fast-recovery body diode

• Extremely low gate charge and input capacitance

• Low on-resistance

• 100% avalanche tested

• Extremely high dv/dt ruggedness

• Zener-protected

Applications

• Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-

recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined

with low RDS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status link

STP26N65DM2

Product summary

Order code STP26N65DM2

Marking 26N65DM2

Package TO-220

Packing Tube

N-channel 650 V, 0.156 Ω typ., 20 A, MDmesh™ DM2

Power MOSFET in a TO-220 package

STP26N65DM2

Datasheet

DS12621 - Rev 1 - July 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

1Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate-source voltage ±25 V

Drain current (continuous) at Tcase = 25 °C 20

Drain current (continuous) at Tcase = 100 °C 12.6

IDM(1) Drain current (pulsed) 53 A

PTOT Total dissipation at Tcase = 25 °C 170 W

dv/dt(2) Peak diode recovery voltage slope 50

V/ns

dv/dt(3) MOSFET dv/dt ruggedness 50

Tstg Storage temperature range

-55 to 150 °C

TjOperating junction temperature range

1. Pulse width is limited by safe operating area.

2. ISD ≤ 20 A, di/dt=900 A/μs, VDS peak < V(BR)DSS, VDD = 400 V

3. VDS ≤ 520 V

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 0.74

°C/W

Rthj-amb Thermal resistance junction-ambient 62.5

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

IAR(1) Avalanche current, repetitive or not repetitive 3 A

EAS(2) Single pulse avalanche energy 530 mJ

1. Pulse width is limited by TJmax

2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V

STP26N65DM2

Electrical ratings

DS12621 - Rev 1 page 2/13

2Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 650 V

IDSS Zero gate voltage drain current

VGS = 0 V, VDS = 650 V 1

µA

VGS = 0 V, VDS = 650 V,

Tcase = 125 °C(1) 100

IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 10 A 0.156 0.190 Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

- 1480 -

Coss Output capacitance - 62 -

Crss Reverse transfer capacitance - 2 -

Coss eq.(1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V - 140 - pF

RGIntrinsic gate resistance f = 1 MHz, ID = 0 A - 4.6 - Ω

QgTotal gate charge VDD = 520 V, ID = 20 A,

VGS = 0 to 10 V

(see Figure 14. Test circuit for gate

charge behavior)

- 35.5 -

Qgs Gate-source charge - 8.2 -

Qgd Gate-drain charge - 17.6 -

1. Coss eq. is defined as the constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 325 V, ID = 10 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Test circuit for

resistive load switching times and

Figure 18. Switching time

waveform)

- 17 -

trRise time - 7 -

td(off) Turn-off delay time - 51 -

tfFall time - 10 -

STP26N65DM2

Electrical characteristics

DS12621 - Rev 1 page 3/13

Table 7. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 20 A

ISDM(1) Source-drain current (pulsed) - 53 A

VSD(2) Forward on voltage VGS = 0 V, ISD = 20 A - 1.6 V

trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs,

VDD = 100 V

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

- 100 ns

Qrr Reverse recovery charge - 0.365 µC

IRRM Reverse recovery current - 7.3 A

trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs,

VDD = 100 V, TJ = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

- 200 ns

Qrr Reverse recovery charge - 1.39 µC

IRRM Reverse recovery current - 13.9 A

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

STP26N65DM2

Electrical characteristics

DS12621 - Rev 1 page 4/13

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area

GADG110620181355SOA

10 2

10 1

10 0

10 -1

10 -1 10 0 10 1 10 2 10 3

(A)

VDS (V)

tp =10 µs

tp =100 µs

tp =1 ms

tp =10 ms

Single pulse,

TC = 25 °C, TJ ≤ 150 °C

Operation in this area

is limited by RDS(on) tp = 1 μs

Figure 2. Thermal impedance

Figure 3. Output characteristics

GIPG201220170957OCH

00 5 10 15 20

(A)

VDS (V)

VGS = 5 V

VGS = 6 V

VGS = 7 V

VGS = 8, 9, 10 V

Figure 4. Transfer characteristics

GIPG201220170957TCH

03 4 5 6 7 8

(A)

VGS (V)

VDS = 20 V

Figure 5. Gate charge vs gate-source voltage

GIPG201220170958QVG

600

500

400

300

200

100

0 6 12 18 24 30 36

VGS

(V)

VDS

(V)

Qg (nC)

VDD = 520 V

ID = 20 A

VDS

Figure 6. Static drain-source on-resistance

GIPG201220170955RID

0.168

0.164

0.160

0.156

0.152

0.148

0.1440 4 8 12 16 20

RDS(on)

(Ω)

ID (A)

VGS =10 V

STP26N65DM2

Electrical characteristics (curves)

DS12621 - Rev 1 page 5/13

Figure 7. Capacitance variations

GIPG201220170957CVR

10 4

10 3

10 2

10 1

10 0

10 -1 10 0 10 1 10 2

(pF)

VDS (V)

CISS

COSS

CRSS

f = 1 MHz

Figure 8. Normalized gate threshold voltage vs

temperature

GIPG201220170954VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75 -25 25 75 125

VGS(th)

(norm.)

Tj (°C)

ID = 250 µA

Figure 9. Normalized on-resistance vs temperature

GIPG201220170954RON

2.2

1.8

1.4

1.0

0.6

0.2

-75 -25 25 75 125

RDS(on)

(norm.)

Tj (°C)

VGS = 10 V

Figure 10. Normalized V(BR)DSS vs temperature

GIPG201220170955BDV

1.08

1.04

1.00

0.96

0.92

0.88

-75 -25 25 75 125

V(BR)DSS

(norm.)

Tj (°C)

ID = 1 mA

Figure 11. Output capacitance stored energy

GIPG201220170958EOS

00 100 200 300 400 500 600

EOSS

(µJ)

VDS (V)

Figure 12. Source-drain diode forward characteristics

GIPG201220170956SDF

1.1

1.0

0.9

0.8

0.7

0.6

0.50 4 8 12 16 20

VSD

(V)

ISD (A)

Tj = -50 °C

Tj = 25 °C

Tj = 150 °C

STP26N65DM2

Electrical characteristics (curves)

DS12621 - Rev 1 page 6/13

3Test circuits

Figure 13. Test circuit for resistive load switching times

AM01468v1

D.U.T.

2200

μF VDD

3.3

μF

pulse width

VGS

Figure 14. Test circuit for gate charge behavior

AM01469v1

47 kΩ 1 kΩ

47 kΩ

2.7 kΩ

1 kΩ

12 V

IG= CONST 100 Ω

100 nF

D.U.T.

pulse width

VGS

2200

μF

VDD

Figure 15. Test circuit for inductive load switching and

diode recovery times

AM01470v1

D.U.T.

25 Ω

100 µH

µF

3.3 1000

µF VDD

D.U.T.

fast

diode

Figure 16. Unclamped inductive load test circuit

AM01471v1

D.U.T.

VDD

pulse width

3.3

µF

2200

µF

Figure 17. Unclamped inductive waveform

AM01472v1

V(BR)DSS

VDD

IDM

Figure 18. Switching time waveform

AM01473v1

VGS 90%

VDS

90%

10%

90%

10%

ton

td(on) tr

toff

td(off) tf

STP26N65DM2

Test circuits

DS12621 - Rev 1 page 7/13

4Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions

and product status are available at: www.st.com. ECOPACK® is an ST trademark.

STP26N65DM2

Package information

DS12621 - Rev 1 page 8/13

4.1 TO-220 type A package information

Figure 19. TO-220 type A package outline

0015988_typeA_Rev_21

STP26N65DM2

TO-220 type A package information

DS12621 - Rev 1 page 9/13

Table 8. TO-220 type A package mechanical data

Dim.

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.55

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10.00 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13.00 14.00

L1 3.50 3.93

L20 16.40

L30 28.90

øP 3.75 3.85

Q 2.65 2.95

STP26N65DM2

TO-220 type A package information

DS12621 - Rev 1 page 10/13

Revision history

Table 9. Document revision history

Date Version Changes

02-Jul-2018 1 Initial release. The document status is production data.

STP26N65DM2

DS12621 - Rev 1 page 11/13

Contents

1Electrical ratings ..................................................................2

2Electrical characteristics...........................................................3

2.1 Electrical characteristics (curves) .................................................5

3Test circuits .......................................................................7

4Package information...............................................................8

4.1 TO-220 type A package information ...............................................8

Revision history .......................................................................11

STP26N65DM2

Contents

DS12621 - Rev 1 page 12/13

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

STP26N65DM2

DS12621 - Rev 1 page 13/13