September 2013 Doc ID 15586 Rev 3 1/28
28
VNN1NV04P-E, VNS1NV04P-E
OMNIFET II
fully autoprotected Power MOSFET
Features
• Linear current limitation
• Thermal shutdown
• Short circuit protection
• Integrated clamp
• Low current drawn from input pin
• Diagnostic feedback through input pin
• ESD protection
• Direct access to the gate of the Power
MOSFET (analog driving)
• Compatible with standard Power MOSFET
Description
The VNN1NV04P-E, VNS1NV04P-E are
monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Parameter Symbol Value
Max on-state resistance (per ch.) RON 250 m
Current limitation (typ) ILIMH 1.7 A
Drain-source clamp voltage VCLAMP 40 V
Table 1. Device summary
Package
Order codes
Tube Tape and reel
SOT-223 VNN1NV04P-E VNN1NV04PTR-E
SO-8 VNS1NV04P-E VNS1NV04PTR-E
SOT-223
SO-8
12
2
3
www.st.com
Contents VNN1NV04P-E, VNS1NV04P-E
2/28 Doc ID 15586 Rev 3
Contents
1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.1 SOT-223 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2 SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.1 SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.2 SO8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.3 SOT-223 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.4 SO8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
VNN1NV04P-E, VNS1NV04P-E List of tables
Doc ID 15586 Rev 3 3/28
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 4. Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 5. SOT-223 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 6. SO-8 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 7. SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 8. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
List of figures VNN1NV04P-E, VNS1NV04P-E
4/28 Doc ID 15586 Rev 3
List of figures
Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 4. Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 5. Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 6. Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 7. Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 8. Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 9. Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 10. Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 11. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 12. Static drain-source on resistance vs input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 13. Static drain-source on resistance vs input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 14. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 15. Static drain-source on resistance vs Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 16. Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 17. Turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 18. Turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 19. Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 20. Turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 21. Turn-off drain-source voltage slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 22. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 23. Switching time resistive load (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 24. Switching time resistive load (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 25. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 26. Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 27. Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 28. Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 29. Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 30. SOT-223 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 31. SOT-223 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . 17
Figure 32. SOT-223 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 33. SOT-223 thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 34. SO-8 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 35. SO-8 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . 19
Figure 36. SO-8 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 37. SO-8 thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 38. SOT-223 mechanical data and package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 39. SO-8 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 40. SOT-223 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 41. SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 42. SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
VNN1NV04P-E, VNS1NV04P-E Block diagram and pin description
Doc ID 15586 Rev 3 5/28
1 Block diagram and pin description
Figure 1. Block diagram
Figure 2. Configuration diagram (top view) (a)
a. For the pins configuration related to SOT-223 see outline at page 1.
Overvoltage
Gate
Linear
DRAIN
SOURCE
Clamp
1
2
3
Current
Limiter
Control
Over
Temperature
INPUT
DRAIN
DRAIN
DRAIN
DRAIN
INPUT
SOURCE
SOURCE
SOURCE
1
45
8
Electrical specifications VNN1NV04P-E, VNS1NV04P-E
6/28 Doc ID 15586 Rev 3
2 Electrical specifications
Figure 3. Current and voltage conventions
2.1 Absolute maximum ratings
Stress values that exceed those listed in the “Absolute maximum ratings” table can cause
permanent damage to the device. These are stress ratings only, and operation of the device
at these, or any other conditions greater than those, indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics sure
program and other relevant quality documents.
DRAIN
INPUT
SOURCE
I
D
I
IN
V
IN
V
DS
R
IN
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
SOT-223 SO-8
VDSn Drain-source voltage (VINn=0 V) Internally clamped V
VINn Input voltage Internally clamped V
IINn Input current +/-20 mA
RIN MINn Minimum input series impedance 330
IDn Drain current Internally limited A
IRn Reverse DC output current -3 A
VESD1 Electrostatic discharge (R=1.5 K, C=100 pF) 4000 V
VESD2
Electrostatic discharge on output pins only
(R=330 , C=150 pF) 16500 V
Ptot Total dissipation at Tc=25 °C 7 8.3 W
TjOperating junction temperature Internally limited °C
TcCase operating temperature Internally limited °C
Tstg Storage temperature -55 to 150 °C
VNN1NV04P-E, VNS1NV04P-E Electrical specifications
Doc ID 15586 Rev 3 7/28
2.2 Thermal data
2.3 Electrical characteristics
Table 3. Thermal data
Symbol Parameter
Max value
Unit
SOT-223 SO-8
Rthj-case Thermal resistance junction-case 18 °C/W
Rthj-lead Thermal resistance junction-lead 15 °C/W
Rthj-amb Thermal resistance junction-ambient 70(1)
1. When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 m thick) connected
to all DRAIN pins
65(1) °C/W
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min Typ Max Unit
Off (-40 °C<Tj<150 °C, unless otherwise specified)
VCLAMP Drain-source clamp voltage VIN=0 V; ID=0.5 A 40 45 55 V
VCLTH
Drain-source clamp threshold
voltage VIN=0 V; ID=2 mA 36 V
VINTH Input threshold voltage VDS=VIN; ID=1 mA 0.5 2.5 V
IISS Supply current from input pin VDS=0 V; VIN=5 V 100 150 µA
VINCL
Input-source clamp
voltage
IIN=1 mA
IIN=-1 mA
6
-1.0
6.8 8
-0.3 V
IDSS
Zero input voltage drain
current (VIN=0 V)
VDS=13 V; VIN=0 V; Tj=25 °C
VDS=25 V; VIN=0 V
30
75 µA
On (-40 °C<Tj<150 °C, unless otherwise specified)
RDS(on)
Static drain-source on
resistance
VIN=5 V; ID=0.5 A; Tj=25 °C
VIN=5 V; ID=0.5 A
250
500 m
Dynamic (Tj=25 °C, unless otherwise specified)
gfs (1) Forward transconductance VDD=13 V; ID=0.5 A 2 S
COSS Output capacitance VDS=13V; f=1MHz; V
IN=0 V 90 pF
Switching (Tj=25 °C, unless otherwise specified)
td(on) Turn-on delay time
VDD=15 V; ID=0.5 A
Vgen=5 V; Rgen=RIN MIN=330
(see Figure 4)
70 200 ns
trRise time 170 500 ns
td(off) Turn-off delay time 350 1000 ns
tfFall time 200 600 ns
Electrical specifications VNN1NV04P-E, VNS1NV04P-E
8/28 Doc ID 15586 Rev 3
td(on) Turn-on delay time
VDD=15 V; ID=0.5 A
Vgen=5 V; Rgen=2.2 K
(see Figure 4)
0.25 1.0 µs
trRise time 1.3 4.0 µs
td(off) Turn-off delay time 1.8 5.5 µs
tfFall time 1.2 4.0 µs
(dI/dt)on Turn-on current slope VDD=15 V; ID=1.5 A
Vgen=5 V; Rgen=RIN MIN=330 5A/µs
QiTotal input charge VDD=12 V; ID=0.5 A; VIN=5 V
Igen=2.13 mA (see Figure 7)5nC
Source drain diode (Tj=25 °C, unless otherwise specified)
VSD(1) Forward on voltage ISD=0.5 A; VIN=0 V 0.8 V
trr Reverse recovery time ISD=0.5 A; dI/dt=6 A/µs
VDD=30V; L=200µH
(see Figure 5)
205 ns
Qrr Reverse recovery charge 100 nC
IRRM Reverse recovery current 0.7 A
Protections (-40 °C<Tj<150 °C, unless otherwise specified)
Ilim Drain current limit VIN=5 V; VDS=13 V 1.7 3.5 A
tdlim Step response current limit VIN=5 V; VDS=13 V 2.0 µs
Tjsh Over temperature shutdown 150 175 200 °C
Tjrs Over temperature reset 135 °C
Igf Fault sink current VIN=5 V; VDS=13 V; Tj=Tjsh 10 15 20 mA
Eas Single pulse avalanche energy
Starting Tj=25 °C; VDD=24 V
VIN=5 V Rgen=RIN MIN=330 
L=50 mH
(see Figure 6 and Figure 8)
55 mJ
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Table 4. Electrical characteristics (continued)
Symbol Parameter Test conditions Min Typ Max Unit
VNN1NV04P-E, VNS1NV04P-E Electrical specifications
Doc ID 15586 Rev 3 9/28
Figure 4.
Switching time test circuit for resistive load
t
I
D
90%
10%
t
V
gen
t
d(on)
t
d(off)
t
f
t
r
R
gen
V
gen
V
D
Electrical specifications VNN1NV04P-E, VNS1NV04P-E
10/28 Doc ID 15586 Rev 3
Figure 5.
Test circuit for diode recovery times
Figure 6. Unclamped inductive load test circuits
L=100uH
A
B
8.5
V
DD
R
gen
FAST
DIODE
OMNIFET
A
D
I
S
330
B
OMNIFET
D
S
I
V
gen
R
GEN
P
W
V
IN
VNN1NV04P-E, VNS1NV04P-E Electrical specifications
Doc ID 15586 Rev 3 11/28
Figure 7. Input charge test circuit
Figure 8. Unclamped inductive waveforms
GEN
ND8003
VIN
Electrical specifications VNN1NV04P-E, VNS1NV04P-E
12/28 Doc ID 15586 Rev 3
2.4 Electrical characteristics curves
Figure 9. Source-drain diode forward
characteristics
Figure 10. Static drain-source on resistance
Figure 11. Derating curve Figure 12. Static drain-source on resistance
vs input voltage (part 1/2)
Figure 13. Static drain-source on resistance
vs input voltage (part 2/2)
Figure 14. Transconductance
0 2 4 6 8 101214
Id (A)
700
750
800
850
900
950
1000
Vsd (mV)
Vin=0V
33.544.555.566.5 7
Vin(V)
0
50
100
150
200
250
300
350
400
450
500
Rds(on) (mohms)
Id=0.5A
Tj=150ºC
Tj=-40ºC
Tj=25ºC
3 3.5 4 4.5 5 5.5 6 6.5
Vin(V)
0
50
100
150
200
250
300
350
400
450
500
Rds(on) (mohms)
Id=1.5A
Id=1A
Id=1.5A
Id=1A
Id=1.5A
Id=1A
Tj=25ºC
Tj=150ºC
Tj=-40ºC
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
Id(A)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Gfs (S)
Vds=13V
Tj=25ºC
Tj=150ºC
Tj=-40ºC
VNN1NV04P-E, VNS1NV04P-E Electrical specifications
Doc ID 15586 Rev 3 13/28
Figure 15. Static drain-source on resistance
vs Id
Figure 16. Transfer characteristics
Figure 17. Turn-on current slope (part 1/2) Figure 18. Turn-on current slope (part 2/2)
Figure 19. Input voltage vs input charge Figure 20. Turn-off drain source voltage slope
(part 1/2)
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
Id(A)
0
50
100
150
200
250
300
350
400
450
500
Rds(on) (mohms)
Tj=25ºC
Tj=150ºC
Tj=-40ºC
Vin=5V
Vin=3.5V
Vin=5V
Vin=5V
Vin=3.5V
Vin=3.5V
1.5
1.75
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
4.25
4.5
4.75
5
Vin(V)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
Idon(A)
Vds=13.5V
Tj=150ºC
Tj=25ºC
Tj=-40ºC
0 500 1000 1500 2000 2500
Rg(ohm)
0
1
2
3
4
5
6
di/dt(A/us)
Vin=5V
Vdd=15V
Id=1.5A
0 500 1000 1500 2000 2500
Rg(ohm)
0.2
0.4
0.6
0.8
1
1.2
1.4
di/dt(A/us)
Vin=3.5V
Vdd=15V
Id=1.5A
0 12345 6
Qg (nC)
0
1
2
3
4
5
6
Vin (V)
Vds=12V
Id=0.5A
0 500 1000 1500 2000 2500
Rg(ohm)
0
50
100
150
200
250
300
350
dv/dt(V/us)
Vin=5V
Vdd=15V
Id=0.5A
Electrical specifications VNN1NV04P-E, VNS1NV04P-E
14/28 Doc ID 15586 Rev 3
Figure 21. Turn-off drain-source voltage slope
(part 2/2)
Figure 22. Capacitance variations
Figure 23. Switching time resistive load
(part 1/2)
Figure 24. Switching time resistive load
(part 2/2)
Figure 25. Output characteristics Figure 26. Normalized on resistance vs
temperature
0 500 1000 1500 2000 2500
Rg(ohm)
0
50
100
150
200
250
300
350
dv/dt(V/us)
Vin=3.5V
Vdd=15V
Id=0.5A
0 5 10 15 20 25 30 35
Vds(V)
50
75
100
125
150
175
200
225
C(pF)
f=1MHz
Vin=0V
0250 500 750 1000 1250 1500 1750 2000 2250 2500
Rg(ohm)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
t(us)
Vdd=15V
Id=0.5A
Vin=5V
td(off)
td(on)
tf
tr
3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25
Vin(V)
0
50
100
150
200
250
300
350
400
450
500
550
t(ns)
Vdd=15V
Id=0.5A
Rg=330ohm
tr
td(off)
tf
td(on)
0123456789101112
VDS(V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
ID(A)
Vin=3V
Vin=5.5V
Vin=3.5V
Vin=4.5V
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0.5
0.75
1
1.25
1.5
1.75
2
2.25
Rds(on) (mOhm)
Vin=5V
Id=0.5A
VNN1NV04P-E, VNS1NV04P-E Electrical specifications
Doc ID 15586 Rev 3 15/28
Figure 27. Normalized input threshold voltage
vs temperature
Figure 28. Normalized current limit vs junction
temperature
Figure 29. Step response current limit
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Vinth (V)
Vds=Vin
Id=1mA
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Ilim (A)
Vin=5V
Vds=13V
5 101520253035
Vdd(V)
1.9
2
2.1
2.2
2.3
2.4
Tdlim(us)
Vin=5V
Rg=330ohm
Protection features VNN1NV04P-E, VNS1NV04P-E
16/28 Doc ID 15586 Rev 3
3 Protection features
During normal operation, the input pin is electrically connected to the gate of the internal
Power MOSFET through a low impedance path.
The device then behaves like a standard Power MOSFET and can be used as a switch from
DC up to 50 kHz. The only difference from the user’s standpoint is that a small DC current
IISS (typ. 100 µA) flows into the input pin in order to supply the internal circuitry.
The device integrates:
?Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche
characteristics of the Power MOSFET stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly important when driving inductive
loads.
?Linear current limiter circuit: limits the drain current ID to Ilim whatever the input pin
voltages. When the current limiter is active, the device operates in the linear region, so
power dissipation may exceed the capability of the heatsink. Both case and junction
temperatures increase, and if this phase lasts long enough, junction temperature may
reach the over temperature threshold Tjsh.
?Over temperature and short circuit protection: these are based on sensing the chip
temperature and are not dependent on the input voltage. The location of the sensing
element on the chip in the power stage area ensures fast, accurate detection of the
junction temperature. Over temperature cutout occurs in the range 150 to 190 °C, a
typical value being 170 °C. The device is automatically restarted when the chip
temperature falls of about 15 °C below shutdown temperature.
?Status feedback: in the case of an over temperature fault condition (Tj > Tjsh), the
device tries to sink a diagnostic current Igf through the input pin in order to indicate fault
condition. If driven from a low impedance source, this current may be used in order to
warn the control circuit of a device shutdown. If the drive impedance is high enough so
that the input pin driver is not able to supply the current Igf, the input pin will fall to 0 V.
This will not however affect the device operation: no requirement is put on the current
capability of the input pin driver except to be able to supply the normal operation drive
current IISS.
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL logic circuit.
VNN1NV04P-E, VNS1NV04P-E Package and PCB thermal data
Doc ID 15586 Rev 3 17/28
4 Package and PCB thermal data
4.1 SOT-223 thermal data
Figure 30. SOT-223 PC board
Note: Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm,PCB
thickness = 2 mm, Cu thickness=35 µm, Copper areas: from minimum pad layout to
0.8 cm2).
Figure 31. SOT-223 Rthj-amb vs PCB copper area in open box free air condition
.
60
70
80
90
100
110
120
130
140
0 0,5 1 1,5 2 2,5
PCB Cu heatsink area (cm^ 2) - (refer to PCB layout)
footprint
Package and PCB thermal data VNN1NV04P-E, VNS1NV04P-E
18/28 Doc ID 15586 Rev 3
Figure 32. SOT-223 thermal impedance junction ambient single pulse
Equation 1: pulse calculation formula
where = tP/T
Figure 33. SOT-223 thermal fitting model of a single channel
Table 5. SOT-223 thermal parameter
Area/island (cm2)FP2
R1 (°C/W) 0.8
R2 (°C/W) 1.6
R3 (°C/W) 4.5
R4 (°C/W) 24
R5 (°C/W) 0.1
R6 (°C/W) 100 45
0,1
1
10
100
1000
0,0001 0,001 0,01 0,1 1 10 100 1000
Time ( s)
ZTH (°C/ W)
Footprint
2 cm
2
ZTHRTH ZTHtp 1–+=
VNN1NV04P-E, VNS1NV04P-E Package and PCB thermal data
Doc ID 15586 Rev 3 19/28
4.2 SO-8 thermal data
Figure 34. SO-8 PC board
Note: Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm,PCB
thickness = 2 mm, Cu thickness=35 µm, Copper areas: from minimum pad layout to 2 cm2).
Figure 35. SO-8 Rthj-amb vs PCB copper area in open box free air condition
C1 (W·s/°C) 0.00006
C2 (W·s/°C) 0.0005
C3 (W·s/°C) 0.03
C4 (W·s/°C) 0.16
C5 (W·s/°C) 1000
C6 (W·s/°C) 0.5 2
Table 5. SOT-223 thermal parameter (continued)
Area/island (cm2)FP2
65
75
85
95
105
00,511,522,5
PCB Cu heatsink area (cm^ 2) - (refer to PCB layout)
footprint
Package and PCB thermal data VNN1NV04P-E, VNS1NV04P-E
20/28 Doc ID 15586 Rev 3
Figure 36. SO-8 thermal impedance junction ambient single pulse
Equation 2: pulse calculation formula
where = tP/T
Figure 37. SO-8 thermal fitting model of a single channel
Table 6. SO-8 thermal parameter
Area/island (cm2)FP2
R1 (°C/W) 0.8
R2 (°C/W) 2.6
R3 (°C/W) 3.5
R4 (°C/W) 21
ZTH (°C/ W)
0,1
1
10
100
1000
0,0001 0,001 0,01 0,1 1 10 100 1000
Time (s)
Footprint
2 cm
2
ZTHRTH ZTHtp 1–+=
VNN1NV04P-E, VNS1NV04P-E Package and PCB thermal data
Doc ID 15586 Rev 3 21/28
R5 (°C/W) 16
R6 (°C/W) 58 28
C1 (W·s/°C) 0.00006
C2 (W·s/°C) 0.0005
C3 (W·s/°C) 0.0075
C4 (W·s/°C) 0.045
C5 (W·s/°C) 0.35
C6 (W·s/°C) 1.05 2
Table 6. SO-8 thermal parameter (continued)
Area/island (cm2)FP2
Package and packing information VNN1NV04P-E, VNS1NV04P-E
22/28 Doc ID 15586 Rev 3
5 Package and packing information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
5.1 SOT-223 mechanical data
Figure 38. SOT-223 mechanical data and package outline
VNN1NV04P-E, VNS1NV04P-E Package and packing information
Doc ID 15586 Rev 3 23/28
5.2 SO8 mechanical data
Table 7. SO-8 mechanical data
Dim.
mm
Min. Typ. Max.
A 1.75
A1 0.10 0.25
A2 1.25
b 0.28 0.48
c 0.17 0.23
D(1)
1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs
shall not exceed 0.15 mm in total (both side).
4.80 4.90 5.00
E 5.80 6.00 6.20
E1(2)
2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not
exceed 0.25 mm per side.
3.80 3.90 4.00
e 1.27
h 0.25 0.50
L 0.40 1.27
L1 1.04
k 0° 8°
ccc 0.10
Package and packing information VNN1NV04P-E, VNS1NV04P-E
24/28 Doc ID 15586 Rev 3
Figure 39. SO-8 package dimension
001602 3 D
VNN1NV04P-E, VNS1NV04P-E Package and packing information
Doc ID 15586 Rev 3 25/28
5.3 SOT-223 packing information
Figure 40. SOT-223 tape and reel shipment (suffix “TR”)
Reel dimensions
Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13
F20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
All dimensions are in mm.
Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (+ 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2
Top
cover
tape
End
Start
No componentsNo components Components
500mm min
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
Package and packing information VNN1NV04P-E, VNS1NV04P-E
26/28 Doc ID 15586 Rev 3
5.4 SO8 packing information
Figure 41. SO-8 tube shipment (no suffix)
Figure 42. SO-8 tape and reel shipment (suffix “TR”)
All dimensions are in mm.
Base Q.ty 100
Bulk Q.ty 2000
Tube length (± 0.5) 532
A3.2
B6
C (± 0.1) 0.6
C
B
A
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
All dimensions are in mm.
Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (+ 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2
Top
cover
tape
End
Start
No componentsNo components Components
500mm min
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
REEL DIMENSIONS
All dimensions are in mm.
Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13
F20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4
VNN1NV04P-E, VNS1NV04P-E Revision history
Doc ID 15586 Rev 3 27/28
6 Revision history
Table 8. Document revision history
Date Revision Changes
16-May-2009 1 Initial release.
29-Sep-2009 2 Removed target specification on cover page.
20-Sep-2013 3 Updated Disclaimer.
VNN1NV04P-E, VNS1NV04P-E
28/28 Doc ID 15586 Rev 3
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