1EBN1001AE - INFINEON TECHNOLOGIES AG

BSL316C

OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor

Features

· Complementary P + N channel

· Enhancement mode

· Logic level (4.5V rated)

· Avalanche rated

· Qualified according to AEC Q101

· 100% lead-free; RoHS compliant

· Halogen free according to IEC61249-2-21

Maximum ratings, at Tj=25 °C, unless otherwise specified 1)

Parameter Symbol Conditions Unit

P N

Continuous drain current

IDTA=25 °C -1.5 1.4 A

TA=70 °C -1.2 1.1

Pulsed drain current

ID,pulse TA=25 °C -6.0 5.6

Avalanche energy, single pulse

EAS

P: ID=-1.5 A,

N: ID=1.4 A,

RGS=25 W

11 3.7 mJ

Gate source voltage

VGS V

Power dissipation1) Ptot TA=25 °C W

Operating and storage temperature

Tj, Tstg °C

ESD class JESD22-A114-HBM

Soldering temperature

Tsolder °C

IEC climatic category; DIN IEC 68-1

Value

-55 ... 150

55/150/56

260

±20

0.5

1) Remark: only one of both transistors active

0 (<250V)

PG-TSOP6

Type

Package

Tape and Reel Information

Marking

Lead Free

Packing

BSL316C

PG-TSOP-6

H6327: 3000 pcs / reel

sPJ

Yes

Non dry

VDS

-30

DS(on),max

VGS=±10 V

150

160

VGS=±4.5 V

270

280

-1.5

1.4

Product Summary

1 2 3

Rev. 2.3 page 1 2014-07-21

BSL316C

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage P

V(BR)DSS VGS=0 V, ID=-250 µA - - -30 V

VGS=0 V, ID=250 µA 30 - -

Gate threshold voltage P

VGS(th) VDS=VGS, ID=-11 µA -2 -1.5 -1

VDS=VGS, ID=3.7 µA 1.2 1.6 2

Zero gate voltage drain current P

IDSS

VDS=-30 V, VGS=0 V,

Tj=25 °C

- - -1 µA

VDS=30 V, VGS=0 V,

Tj=25 °C

- - 1

VDS=-30 V, VGS=0 V,

Tj=150 °C

- - -100

VDS=30 V, VGS=0 V,

Tj=150 °C

- - 100

Gate-source leakage current P

RDS(on) VGS=-4.5 V, ID=-

1.1 A -177 270 mW

VGS=4.5 V, ID=-1.1 A -191 280

VGS=-10 V, ID=-1.5 A -113 150

VGS=10 V, ID=1.4 A -119 160

Transconductance P

gfs

|VDS|>2|ID|RDS(on)max,

ID=-1.18 A

-2.7 - S

|VDS|>2|ID|RDS(on)max,

ID=1.1 A

-2.3 -

±100

RthJA

IGSS

VGS=±20 V, VDS=0 V

Values

2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both

sides of the PCB

Drain-source on-state

resistance

Thermal resistance, junction -

ambient1)

250

minimal footprint 2)

K/W

Rev. 2.3 page 2 2014-07-21

BSL316C

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance P

Ciss -212 282 pF

N - 71 94

Output capacitance P

Coss -69 91

N - 26 35

Reverse transfer capacitance P

Crss -56 84

N - 5 7

Turn-on delay time P

td(on) -5.0 -ns

N - 3.4 -

Rise time P

tr-6.5 -

N - 2.3 -

Turn-off delay time P

td(off) -14.3 -

N - 5.8 -

Fall time P

tf-7.5 -

N - 1.0 -

Gate Charge Characteristics

Gate to source charge P

Qgs - -0.6 - nC

Gate to drain charge

Qgd - -1.2 -

Switching charge

Qg- -2.4 -

Gate plateau voltage

Vplateau - -2.9 -

Gate to source charge N

Qgs -0.3 -

Gate to drain charge

Qgd -0.2 -

Switching charge

Qg0.6 -

Gate plateau voltage

Vplateau -3.4 -

VDD=15 V,

ID=1.4 A,

VGS=0 to 5 V

Values

VGS=0 V,

P: VDS=-15 V,

N: VDS= 15 V,

f=1 MHz

P: VDD=-15 V,

VGS=-10 V, RG=6 W,

ID=-1.5 A

N: VDD=15 V,

VGS=10 V, RG=6 W,

ID=1.4 A

VDD=-15 V,

ID=-1.5 A,

VGS=0 to -5 V

Rev. 2.3 page 3 2014-07-21

BSL316C

Parameter Symbol Conditions Unit

min. typ. max.

Reverse Diode

IS- - -0.5 A

N - - 0.5

Diode pulse current P

IS,pulse - - -6.0

N - - 5.6

Diode forward voltage P

VSD

VGS=0 V, IF=-1.5 A,

Tj=25 °C

- -0.8 -1.1 V

VGS=0 V, IF=1.4 A,

Tj=25 °C

-0.86 1.1

Reverse recovery time P

trr -8.2 -ns

N - 9.1 -

Reverse recovery charge P

Qrr -2.1 -nC

N - 2.6 -

Diode continuous forward current

Values

TC=25 °C

VR=±15 V, IF=IS,

diF/dt=100 A/µs

Rev. 2.3 page 4 2014-07-21

BSL316C

1 Power dissipation (P) 2 Power dissipation (N)

Ptot=f(TA)Ptot=f(TA)

3 Drain current (P) 4 Drain current (N)

ID=f(TA)ID=f(TA)

parameter: VGS≤-10 V parameter: VGS≥10 V

0.1

0.2

0.3

0.4

0.5

0.6

040 80 120 160

Ptot [W]

TA [°C]

0.2

0.4

0.6

0.8

1.2

1.4

1.6

040 80 120 160

ID [A]

TA [°C]

0.1

0.2

0.3

0.4

0.5

0.6

040 80 120 160

Ptot [W]

TA [°C]

0.2

0.4

0.6

0.8

1.2

1.4

1.6

040 80 120 160

-ID [A]

TA [°C]

Rev. 2.3 page 5 2014-07-21

BSL316C

5 Safe operating area (P) 6 Safe operating area (N)

ID=f(VDS); TA=25 °C; D=0 ID=f(VDS); TA=25 °C; D=0

parameter: tpparameter: tp

7 Max. transient thermal impedance (P) 8 Max. transient thermal impedance (N)

ZthJA=f(tp)ZthJA=f(tp)

parameter: D=tp/Tparameter: D=tp/T

1 µs

10 µs

100 µs

1 ms

10 ms

10-1 100 101 102

10-2

10-1

100

101

ID [A]

VDS [V]

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

10-5 10-4 10-3 10-2 10-1 100 101 102

100

101

102

103

ZthJA [K/W]

tp [s]

1 µs

10 µs

100 µs

1 ms

10 ms

10-1 100 101 102

10-2

10-1

100

101

-ID [A]

-VDS [V]

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

10-5 10-4 10-3 10-2 10-1 100 101 102

100

101

102

103

ZthJA [K/W]

tp [s]

Rev. 2.3 page 6 2014-07-21

BSL316C

9 Typ. output characteristics (P) 10 Typ. output characteristics (N)

ID=f(VDS); Tj=25 °C ID=f(VDS); Tj=25 °C

parameter: VGS parameter: VGS

11 Typ. drain-source on resistance (P) 12 Typ. drain-source on resistance (N)

RDS(on)=f(ID); Tj=25 °C RDS(on)=f(ID); Tj=25 °C

parameter: VGS parameter: VGS

2.5 V

3 V

3.5 V

4 V

4.5 V

5 V

10 V

0 1 2 3

ID [A]

VDS [V]

3.5 V

4 V

4.5 V

5 V

10 V

100

150

200

250

300

350

400

0 1 2 3 4 5

RDS(on) [mW]

ID [A]

-2.5 V

-3 V

-3.5 V

-4 V

-4.5 V

-5 V -10 V

0 1 2 3

-ID [A]

-VDS [V]

-3 V

-3.5 V

-4 V

-4.5 V

-5 V

-10 V

100

150

200

250

300

350

400

0 1 2 3 4 5

RDS(on) [mW]

-ID [A]

Rev. 2.3 page 7 2014-07-21

BSL316C

13 Typ. transfer characteristics (P) 14 Typ. transfer characteristics (N)

ID=f(VGS); |VDS |>2 | ID| RDS(on)max ID=f(VGS); |VDS |>2 | ID| RDS(on)max

parameter: Tjparameter: Tj

15 Drain-source on-state resistance (P) 16 Drain-source on-state resistance (N)

RDS(on)=f(Tj); ID=-1.5 A; VGS=-10 V RDS(on)=f(Tj); ID=1.4 A; VGS=10 V

25 °C 150 °C

012345

ID [A]

VGS [V]

25 °C

150 °C

0 1 2 3 4 5

-ID [A]

-VGS [V]

typ

98%

100

150

200

250

300

-60 -20 20 60 100 140 180

RDS(on) [mW]

Tj [°C]

typ

98%

100

150

200

250

300

-60 -20 20 60 100 140 180

RDS(on) [mW]

Tj [°C]

Rev. 2.3 page 8 2014-07-21

BSL316C

17 Typ. gate threshold voltage (P) 18 Typ. gate threshold voltage (N)

VGS(th)=f(Tj); VGS=VDS; ID=-11 µA VGS(th)=f(Tj); VGS=VDS; ID=3.7 µA

19 Typ. capacitances (P) 20 Typ. capacitances (N)

C=f(VDS); VGS=0 V; f=1 MHz C=f(VDS); VGS=0 V; f=1 MHz

Ciss

Coss

Crss

101

102

103

010 20 30

C [pF]

-VDS [V]

Ciss

Coss

Crss

100

101

102

010 20 30

C [pF]

VDS [V]

typ

max

min

0.4

0.8

1.2

1.6

2.4

2.8

-60 -20 20 60 100 140 180

-VGS(th) [V]

Tj [°C]

typ

min

max

0.4

0.8

1.2

1.6

2.4

2.8

-60 -20 20 60 100 140 180

VGS(th) [V]

Tj [°C]

Rev. 2.3 page 9 2014-07-21

BSL316C

21 Forward characteristics of reverse diode (P) 22 Forward characteristics of reverse diode (N)

IF=f(VSD)IF=f(VSD)

parameter: Tjparameter: Tj

23 Avalanche characteristics (P) 24 Avalanche characteristics (N)

IAS=f(tAV); RGS=25 WIAS=f(tAV); RGS=25 W

parameter: Tj(start) parameter: Tj(start)

25 °C

100 °C

125 °C

0.1

110 100 1000

-IAV [A]

tAV [µs]

25 °C

100 °C

125 °C

0.1

110 100 1000

IAV [A]

tAV [µs]

25 °C 150 °C

25 °C, 98%

150 °C, 98%

10-2

10-1

100

101

0 0.5 1 1.5 2

-IF [A]

-VSD [V]

25 °C

150 °C

98%, 25 °C

98%, 150°C

10-2

10-1

100

101

0 0.5 1 1.5 2

IF [A]

VSD [V]

Rev. 2.3 page 10 2014-07-21

BSL316C

25 Typ. gate charge (P) 26 Typ. gate charge (N)

VGS=f(Qgate); ID=-1.5 A pulsed VGS=f(Qgate); ID=1.4 A pulsed

parameter: VDD parameter: VDD

27 Drain-source breakdown voltage (P) 28 Drain-source breakdown voltage (N)

VBR(DSS)=f(Tj); ID=-250 µA VBR(DSS)=f(Tj); ID=250 µA

-60 -20 20 60 100 140 180

-VBR(DSS) [V]

Tj [°C]

-60 -20 20 60 100 140 180

VBR(DSS) [V]

Tj [°C]

-6 V -15 V -24 V

012345

-VGS [V]

-Qgate [nC]

6 V 15 V 24 V

0 0.2 0.4 0.6 0.8 1 1.2

VGS [V]

Qgate [nC]

Rev. 2.3 page 11 2014-07-21

BSL316C

Package Outline:

Footprint: Packaging:

Dimensions in mm

Note: For symmetric types there is no defined Pin 1 orientation in the reel.

TSOP6

Rev. 2.3 page 12 2014-07-21

BSL316C

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

Rev. 2.3 page 13 2014-07-21