GSOT15-HT3-GS08 - Vishay Semiconductor Diodes Division

GSOT03-HT3 to GSOT36-HT3

Document Number 85822

Rev. 1.8, 21-Apr-08

Vishay Semiconductors

www.vishay.com

20417

Circuit Diagram

20514

For technical support, please contact: ESD-Protection@vishay.com

Single-Line ESD-Protection in LLP75

Features

• Single-line ESD-protection device

• ESD-immunity acc. IEC 61000-4-2

± 30 kV contact discharge

± 30 kV air discharge

• Space saving LLP package

• Lead (Pb)-free component

• Lead finish = "e3" = matte tin (Sn)

• Non-magnetic

• "Green" molding compound

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Marking (example only)

Dot = Pin 1 marking

XX = Date code

YY = Type code (see table below)

Ordering Information

Package Data

21001

Device name Ordering code Taped units per reel

(8 mm tape on 7" reel) Minimum order quantity

GSOT03-HT3 GSOT03-HT3-GS08 3000 15000

GSOT04-HT3 GSOT04-HT3-GS08 3000 15000

GSOT05-HT3 GSOT05-HT3-GS08 3000 15000

GSOT08-HT3 GSOT08-HT3-GS08 3000 15000

GSOT12-HT3 GSOT12-HT3-GS08 3000 15000

GSOT15-HT3 GSOT15-HT3-GS08 3000 15000

GSOT24-HT3 GSOT24-HT3-GS08 3000 15000

GSOT36-HT3 GSOT36-HT3-GS08 3000 15000

Device name Package

name

Marking

code Weight Molding compound

flammability rating Moisture sensitivity level Soldering conditions

GSOT03-HT3 LLP75-3B A3 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals

GSOT04-HT3 LLP75-3B A4 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals

GSOT05-HT3 LLP75-3B A5 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals

GSOT08-HT3 LLP75-3B A6 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals

GSOT12-HT3 LLP75-3B A7 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals

GSOT15-HT3 LLP75-3B A8 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals

GSOT24-HT3 LLP75-3B A9 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals

GSOT36-HT3 LLP75-3B AA 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals

www.vishay.com

Document Number 85822

Rev. 1.8, 21-Apr-08

GSOT03-HT3 to GSOT36-HT3

Vishay Semiconductors

For technical support, please contact: ESD-Protection@vishay.com

Absolute Maximum Ratings

GSOT03-HT3

GSOT04-HT3

GSOT05-HT3

GSOT08-HT3

Rating Test con d ition Symbol Value Unit

Peak pulse current Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 30 A

Peak pulse power Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 369 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Operating temperature Junction temperature TJ- 40 to + 125 °C

Storage temperature TSTG - 55 to + 150 °C

Rating Test con d ition Symbol Value Unit

Peak pulse current Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 30 A

Peak pulse power Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 429 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Operating temperature Junction temperature TJ- 40 to + 125 °C

Storage temperature TSTG - 55 to + 150 °C

Rating Test con d ition Symbol Value Unit

Peak pulse current Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 30 A

Peak pulse power Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 480 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Operating temperature Junction temperature TJ- 40 to + 125 °C

Storage temperature TSTG - 55 to + 150 °C

Rating Test con d ition Symbol Value Unit

Peak pulse current Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 18 A

Peak pulse power Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 345 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Operating temperature Junction temperature TJ- 40 to + 125 °C

Storage temperature TSTG - 55 to + 150 °C

GSOT03-HT3 to GSOT36-HT3

Document Number 85822

Rev. 1.8, 21-Apr-08

Vishay Semiconductors

www.vishay.com

For technical support, please contact: ESD-Protection@vishay.com

GSOT12-HT3

GSOT15-HT3

GSOT24-HT3

GSOT36-HT3

Rating Test condition Symbol Value Unit

Peak pulse current Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 12 A

Peak pulse power Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 312 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Operating temperature Junction temperature TJ- 40 to + 125 °C

Storage temperature TSTG - 55 to + 150 °C

Rating Test condition Symbol Value Unit

Peak pulse current Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 8A

Peak pulse power Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 230 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Operating temperature Junction temperature TJ- 40 to + 125 °C

Storage temperature TSTG - 55 to + 150 °C

Rating Test condition Symbol Value Unit

Peak pulse current Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 5A

Peak pulse power Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 235 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Operating temperature Junction temperature TJ- 40 to + 125 °C

Storage temperature TSTG - 55 to + 150 °C

Rating Test condition Symbol Value Unit

Peak pulse current Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 3.5 A

Peak pulse power Pin 3 to 1

Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 248 W

ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV

Operating temperature Junction temperature TJ- 40 to + 125 °C

Storage temperature TSTG - 55 to + 150 °C

www.vishay.com

Document Number 85822

Rev. 1.8, 21-Apr-08

GSOT03-HT3 to GSOT36-HT3

Vishay Semiconductors

For technical support, please contact: ESD-Protection@vishay.com

BiAs-Mode (1-line Bidirectional Asymmetrical protection mode)

With the GSOTxx-HT3 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1

connected to ground and pin 3 connected to a signal- or data-line which has to be protected. As long as the

voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse

Working Voltage (VRWM) the protection diode between pin 2 and pin 3 offer a high isolation to the ground line.

The protection device behaves like an open switch.

As soon as any positive transient voltage signal exceeds the break through voltage level of the protection

diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device

behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level

plus the voltage drop at the series impedance (resistance and inductance) of the protection device.

Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the

forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to

the ground level.

Due to the different clamping levels in forward and reverse direction the GSOTxx-HT3 clamping behaviour is

Bidirectional and Asymmetrical (BiAs).

Electrical Characteristics

Ratings at 25 °C ambient temperature unless otherwise specified

GSOT03-HT3

BiAs mode (between pin 3 to 1)

20418

Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit

Protection paths Number of lines which can be protected Nlines 1 lines

Reverse stand off voltage at IR = 100 µA VRWM 3.3 V

Reverse current at VR = 3.3 V IR100 µA

Reverse break down voltage at IR = 1 mA VBR 44.6 V

Reverse clamping voltage at IPP = 1 A VC5.7 7.5 V

at IPP = IPPM = 30 A VC10 12.3 V

Forward clamping voltage at IPP = 1 A VF11.2V

at IPP = IPPM = 30 A VF4.5 V

Capacitance at VR = 0 V; f = 1 MHz CD420 600 pF

at VR = 1.6 V; f = 1 MHz CD260 pF

GSOT03-HT3 to GSOT36-HT3

Document Number 85822

Rev. 1.8, 21-Apr-08

Vishay Semiconductors

www.vishay.com

For technical support, please contact: ESD-Protection@vishay.com

GSOT04-HT3

BiAs mode (between pin 3 to 1)

GSOT05-HT3

BiAs mode (between pin 3 to 1)

GSOT08-HT3

BiAs mode (between pin 3 to 1)

Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit

Protection paths Number of lines which can be protected Nlines 1 lines

Reverse stand off voltage at IR = 20 µA VRWM 4V

Reverse current at VR = 4 V IR20 µA

Reverse break down voltage at IR = 1 mA VBR 56.1 V

Reverse clamping voltage at IPP = 1 A VC7.5 9 V

at IPP = IPPM = 30 A VC11.2 14.3 V

Forward clamping voltage at IPP = 1 A VF11.2V

at IPP = IPPM = 30 A VF4.5 V

Capacitance at VR = 0 V; f = 1 MHz CD310 450 pF

at VR = 2 V; f = 1 MHz CD200 pF

Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit

Protection paths Number of lines which can be protected Nlines 1 lines

Reverse stand off voltage at IR = 10 µA VRWM 5V

Reverse current at VR = 5 V IR10 µA

Reverse break down voltage at IR = 1 mA VBR 66.8 V

Reverse clamping voltage at IPP = 1 A VC78.7V

at IPP = IPPM = 30 A VC12 16 V

Forward clamping voltage at IPP = 1 A VF11.2V

at IPP = IPPM = 30 A VF4.5 V

Capacitance at VR = 0 V; f = 1 MHz CD260 350 pF

at VR = 2.5 V; f = 1 MHz CD150 pF

Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit

Protection paths Number of lines which can be protected Nlines 1 lines

Reverse stand off voltage at IR = 5 µA VRWM 8V

Reverse current at VR = 8 V IR5µA

Reverse break down voltage at IR = 1 mA VBR 910 V

Reverse clamping voltage at IPP = 1 A VC10.7 13 V

at IPP = IPPM = 18 A VC15.2 19.2 V

Forward clamping voltage at IPP = 1 A VF11.2V

at IPP = IPPM = 18 A VF3V

Capacitance at VR = 0 V; f = 1 MHz CD160 250 pF

at VR = 4 V; f = 1 MHz CD80 pF

www.vishay.com

Document Number 85822

Rev. 1.8, 21-Apr-08

GSOT03-HT3 to GSOT36-HT3

Vishay Semiconductors

For technical support, please contact: ESD-Protection@vishay.com

GSOT12-HT3

BiAs mode (between pin 3 to 1)

GSOT15-HT3

BiAs mode (between pin 3 to 1)

GSOT24-HT3

BiAs mode (between pin 3 to 1)

Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit

Protection paths Number of lines which can be protected Nlines 1 lines

Reverse stand off voltage at IR = 1 µA VRWM 12 V

Reverse current at VR = 12 V IR1µA

Reverse break down voltage at IR = 1 mA VBR 13.5 15 V

Reverse clamping voltage at IPP = 1 A VC15.4 18.7 V

at IPP = IPPM = 12 A VC21.2 26 V

Forward clamping voltage at IPP = 1 A VF11.2V

at IPP = IPPM = 12 A VF2.2 V

Capacitance at VR = 0 V; f = 1 MHz CD115 150 pF

at VR = 6 V; f = 1 MHz CD50 pF

Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit

Protection paths Number of lines which can be protected Nlines 1 lines

Reverse stand off voltage at IR = 1 µA VRWM 15 V

Reverse current at VR = 15 V IR1µA

Reverse break down voltage at IR = 1 mA VBR 16.5 18 V

Reverse clamping voltage at IPP = 1 A VC19.4 23.5 V

at IPP = IPPM = 8 A VC24.8 28.8 V

Forward clamping voltage at IPP = 1 A VF11.2V

at IPP = IPPM = 8 A VF1.8 V

Capacitance at VR = 0 V; f = 1 MHz CD90 120 pF

at VR = 7.5 V; f = 1 MHz CD35 pF

Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit

Protection paths Number of lines which can be protected Nlines 1 lines

Reverse stand off voltage at IR = 1 µA VRWM 24 V

Reverse current at VR = 24 V IR1µA

Reverse break down voltage at IR = 1 mA VBR 27 30 V

Reverse clamping voltage at IPP = 1 A VC34 41 V

at IPP = IPPM = 5 A VC41 47 V

Forward clamping voltage at IPP = 1 A VF11.2V

at IPP = IPPM = 5 A VF1.4 V

Capacitance at VR = 0 V; f = 1 MHz CD65 80 pF

at VR = 12 V; f = 1 MHz CD20 pF

GSOT03-HT3 to GSOT36-HT3

Document Number 85822

Rev. 1.8, 21-Apr-08

Vishay Semiconductors

www.vishay.com

For technical support, please contact: ESD-Protection@vishay.com

GSOT36-HT3

BiAs mode (between pin 3 to 1)

Package Dimensions in millimeters (inches): LLP75-3B

Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit

Protection paths Number of lines which can be protected Nlines 1 lines

Reverse stand off voltage at IR = 1 µA VRWM 36 V

Reverse current at VR = 36 V IR1µA

Reverse break down voltage at IR = 1 mA VBR 39 43 V

Reverse clamping voltage at IPP = 1 A VC49 60 V

at IPP = IPPM = 3.5 A VC59 71 V

Forward clamping voltage at IPP = 1 A VF11.2V

at IPP = IPPM = 3.5 A VF1.3 V

Capacitance at VR = 0 V; f = 1 MHz CD52 65 pF

at VR = 18 V; f = 1 MHz CD12 pF

18057

www.vishay.com

Document Number 85822

Rev. 1.8, 21-Apr-08

GSOT03-HT3 to GSOT36-HT3

Vishay Semiconductors

For technical support, please contact: ESD-Protection@vishay.com

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively.

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA.

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or

unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,

and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated

with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1

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