BSP 30 ... BSP 33 Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage PNP Power dissipation - Verlustleistung 0.2 6.5 0.1 3 1.65 2.3 2 0.2 3.5 0.3 7 0.7 1.3 W Plastic case Kunststoffgehause 4 1 PNP 3 3.25 Dimensions / Mae in mm 1 = B 2, 4 = C 3 = E SOT-223 Weight approx. - Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BSP 30 BSP 31 BSP 32 BSP 33 Collector-Emitter-voltage B open - VCE0 60 V 80 V Collector-Base-voltage E open - VCB0 70 V 90 V Emitter-Base-voltage C open - VEB0 5V Power dissipation - Verlustleistung Ptot 1.3 W 1) Collector current - Kollektorstrom (dc) - IC 1A Peak Collector current - Koll.-Spitzenstrom - ICM 2A Peak Base current - Basis-Spitzenstrom - IBM 200 mA Junction temp. - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 60 V - ICB0 - - 100 nA IE = 0, - VCB = 60 V, Tj = 150/C - ICB0 - - 50 :A - IEB0 - - 100 nA Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 5 V Collector saturation volt. - Kollektor-Sattigungsspg. 2) 1 - IC = 150 mA, - IB = 15 mA - VCEsat - - 250 mV - IC = 500 mA, - IB = 50 mA - VCEsat - - 500 mV ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 2 01.11.2003 Switching Transistors BSP 30 ... BSP 33 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Base saturation voltage - Basis-Sattigungsspannung 1) - IC = 150 mA, - IB = 15 mA - VBEsat - - 1V - IC = 500 mA, - IB = 50 mA - VBEsat - - 1.2 V hFE 10 - - hFE 40 - 120 hFE 30 - - hFE 30 - - hFE 100 - 300 hFE 50 - - fT 100 MHz - - - 20 pF - CEB0 - 120 pF - ton - - 500 ns toff - - 600 ns DC current gain - Kollektor-Basis-Stromverhaltnis 1) - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA BSP 30 BSP 32 BSP 31 BSP 33 Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten turn-on time turn-off time - ICon = 100 mA, - IBon = 5 mA, IBoff = 5 mA Thermal resistance - Warmewiderstand junction to ambient air - Sperrschicht zu umgebender Luft RthA 93 K/W 2) junction to soldering point - Sperrschicht zu Lotpad RthS 12 K/W Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren BSP 40, BSP 41, BSP 42, BSP 43 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 3