1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
201.11.2003
4
3
2
1
3
±0.1
6.5
±0.2
0.7
3.25 2.3
7
±0.3
1.65
3.5
±0.2
BSP 30 ... BSP 33 Switching Transistors
PNP Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP
Power dissipation – Verlustleistung 1.3 W
Plastic case SOT-223
Kunststoffgehäuse
Weight approx. – Gewicht ca. 0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2, 4 = C 3 = E
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BSP 30
BSP 31
BSP 32
BSP 33
Collector-Emitter-voltage B open - VCE0 60 V 80 V
Collector-Base-voltage E open - VCB0 70 V 90 V
Emitter-Base-voltage C open - VEB0 5 V
Power dissipation – Verlustleistung Ptot 1.3 W 1)
Collector current – Kollektorstrom (dc) - IC1 A
Peak Collector current – Koll.-Spitzenstrom - ICM 2 A
Peak Base current – Basis-Spitzenstrom - IBM 200 mA
Junction temp. – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 60 V - ICB0 – – 100 nA
IE = 0, - VCB = 60 V, Tj = 150/C- I
CB0 – – 50 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 5 V - IEB0 – – 100 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
- IC = 150 mA, - IB = 15 mA - VCEsat – – 250 mV
- IC = 500 mA, - IB = 50 mA - VCEsat – – 500 mV
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
3
01.11.2003
Switching Transistors BSP 30 ... BSP 33
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 150 mA, - IB = 15 mA - VBEsat – – 1 V
- IC = 500 mA, - IB = 50 mA - VBEsat – – 1.2 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 5 V, - IC = 100 :A
BSP 30
BSP 32
hFE 10 – –
- VCE = 5 V, - IC = 100 mA hFE 40 – 120
- VCE = 5 V, - IC = 500 mA hFE 30 – –
- VCE = 5 V, - IC = 100 :A
BSP 31
BSP 33
hFE 30 – –
- VCE = 5 V, - IC = 100 mA hFE 100 – 300
- VCE = 5 V, - IC = 500 mA hFE 50 – –
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz fT100 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 20 pF –
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 – 120 pF –
Switching times – Schaltzeiten
turn-on time - ICon = 100 mA,
- IBon = 5 mA, IBoff = 5 mA
ton – – 500 ns
turn-off time toff – – 600 ns
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft RthA 93 K/W 2)
junction to soldering point – Sperrschicht zu Lötpad RthS 12 K/W
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren BSP 40, BSP 41, BSP 42, BSP 43
