2N5179
SILICON
NPN RF TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5179 type is a
silicon NPN RF transistor, manufactured by the epitaxial
planar process, designed for VHF/UHF amplifier,
oscillator, and converter applications.
MARKING: FULL PART NUMBER
TO-72 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 2.5 V
Continuous Collector Current IC 50 mA
Power Dissipation PD 200 mW
Power Dissipation (TC=25°C) PD 300 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 0.58 °C/mW
Thermal Resistance ΘJA 0.87 °C/mW
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=15V 20 nA
ICBO V
CB=15V, TA=150°C 1.0 μA
BVCBO I
C=1.0μA 20 V
BVCEO I
C=3.0mA 12 V
BVEBO I
E=10μA 2.5 V
VCE(SAT) I
C=10mA, IB=1.0mA 0.4 V
VBE(SAT) I
C=10mA, IB=1.0mA 1.0 V
hFE V
CE=1.0V, IC=3.0mA 25 250
hfe V
CE=6.0V, IC=2.0mA, f=1.0kHz 25 300
fT V
CE=6.0V, IC=5.0mA, f=100MHz 900 2000 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 1.0 pF
Po V
CB=10V, IE=12mA, f=500MHz 20 mW
Gpe V
CE=6.0V, IC=5.0mA, f=200MHz 15 dB
NF VCE=6.0V, IC=1.5mA, f=200MHz, RS=50Ω 4.5 dB
rb’Cc V
CB=6.0V, IC=2.0mA, f=31.9MHz 3.0 14 ps
R1 (8-May 2013)
www.centralsemi.com
2N5179
SILICON
NPN RF TRANSISTOR
LEAD CODE:
1) Emitter
2) Base
3) Collector
4) Case
MARKING:
FULL PART NUMBER
TO-72 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (8-May 2013)
