MITSUBISHI IGBT MODULES CM200RL-24NF HIGH POWER SWITCHING USE CM200RL-24NF IC ................................................................... 200A VCES ......................................................... 1200V Insulated Type 7-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 135 (6.05) (6.05) 110 0.5 17.5 10.5 26 26 11.7 10.5 18.7 V W B (6.05) U 18 (13) 10.5 10.5 CN 25 110 20 (6.05) 10.5 (13) 11 6-M5 NUTS 4 LABEL +1 25 UP 13 30.5 46.3 VP 24.1-0.5 WP 1 (SCREWING DEPTH) 13.75 26.5 4-5.5 MOUNTING HOLES 1 16.5 P 48.75 B 1 78 0.5 20 10.5 A 8 N 1 Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B P UP-1 UP-2 B CN-7 CN-8 VP-1 VP-2 CN-5 CN-6 WP-1 WP-2 V U CN-3 CN-4 W CN-1 CN-2 N CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM200RL-24NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified) INVERTER PART Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Conditions G-E Short C-E Short DC, TC = 72C*1 Pulse (Note 2) Pulse TC = 25C (Note 2) Ratings 1200 20 200 400 200 400 1160 Unit V V A A A A W Ratings 1200 20 100 200 620 1200 100 Unit Ratings -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 750 Unit BRAKE PART Symbol VCES VGES IC ICM PC (Note 3) VRRM IFM Parameter Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation Repetitive peak reverse voltage Forward current Conditions G-E Short C-E Short DC, TC = 80C*1 Pulse TC = 25C Clamp diode part Clamp diode part (Note 2) V V A A W V A (COMMON RATING) Symbol Tj Tstg Viso -- -- -- Parameter Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value C C Vrms N*m N*m g Feb. 2009 2 MITSUBISHI IGBT MODULES CM200RL-24NF HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) INVERTER PART Test conditions Parameter Symbol Limits Typ. -- Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 6 7 8 V IGES Gate leakage current VGE = VGES, VCE = 0V -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.6 -- 2.1 2.4 -- -- -- 1000 -- -- -- -- -- 9 -- -- -- 0.051 -- 0.5 3.1 -- 35 3 0.68 -- 130 70 400 350 150 -- 3.8 0.11 0.17 A Limits Typ. -- Max. 1 VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance Tj = 25C Tj = 125C IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = 15V RG = 1.6, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied (1/6 module)*2 External gate resistance -- 21 mA V nF nF nF nC ns ns ns ns ns C V K/W K/W K/W BRAKE PART Symbol Test conditions Parameter Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 10mA, VCE = 10V 6 7 8 V IGES Gate leakage current VGE = VGES, VCE = 0V -- -- -- -- -- -- -- -- -- -- 3.1 -- 2.1 2.4 -- -- -- 500 -- -- -- -- 0.5 3.0 -- 17.5 1.5 0.34 -- 3.8 0.20 0.28 31 A VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop Thermal resistance Tj = 25C Tj = 125C IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 100A, VGE = 15V IF = 100A IGBT part*1 Clamp diode part*1 External gate resistance mA V nF nF nF nC V K/W K/W *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 3 MITSUBISHI IGBT MODULES CM200RL-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 350 13 12 250 200 11 150 100 10 50 9 0 2 4 6 8 4 VGE = 15V 3 2 1 Tj = 25C Tj = 125C 0 10 0 50 100 150 200 250 300 350 400 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 103 Tj = 25C EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25C 15 300 0 CAPACITANCE Cies, Coes, Cres (nF) VGE = 20V 8 6 4 IC = 400A IC = 200A 2 IC = 80A 0 6 8 10 12 14 16 18 7 5 3 2 102 7 5 3 2 101 20 2 3 4 5 CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 7 5 3 2 Cies 101 Coes 100 7 5 3 2 1 0 EMITTER-COLLECTOR VOLTAGE VEC (V) 102 7 5 3 2 Tj = 25C Tj = 125C GATE-EMITTER VOLTAGE VGE (V) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) 400 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 102 td(on) 7 5 3 2 tr Conditions: VCC = 600V VGE = 15V RG = 1.6 Tj = 125C Inductive load 101 7 5 3 2 100 1 10 COLLECTOR-EMITTER VOLTAGE VCE (V) td(off) tf 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 4 MITSUBISHI IGBT MODULES CM200RL-24NF NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) 7 5 3 Irr 2 trr 102 7 5 Conditions: VCC = 600V VGE = 15V RG = 1.6 Tj = 25C Inductive load 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25C 3 Under the chip 2 10-1 7 5 3 2 IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.11K/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.17K/W -3 10 10-2 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 7 Conditions: VCC = 600V 5 VGE = 15V 3 RG = 1.6 Tj = 125C 2 Inductive load C snubber at bus 101 SWITCHING LOSS (mJ/pulse) 102 7 Esw(off) Esw(on) 7 5 3 2 2 3 5 7 102 2 3 Esw(on) 5 3 Esw(off) 2 101 5 3 2 100 0 10 5 7 103 Conditions: VCC = 600V VGE = 15V IC = 200A Tj = 125C Inductive load C snubber at bus 7 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG () RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 102 7 7 5 3 Err 2 101 Conditions: VCC = 600V VGE = 15V RG = 1.6 Tj = 125C Inductive load C snubber at bus 7 5 3 2 100 1 10 10-1 7 5 3 2 102 100 1 10 RECOVERY LOSS (mJ/pulse) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 RECOVERY LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 2 3 5 7 102 2 3 5 3 2 101 7 5 3 2 100 0 10 5 7 103 Err Conditions: VCC = 600V VGE = 15V IE = 200A Tj = 125C Inductive load C snubber at bus 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG () EMITTER CURRENT IE (A) Feb. 2009 5 MITSUBISHI IGBT MODULES CM200RL-24NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 200A VCC = 400V 16 VCC = 600V 12 8 4 0 0 200 400 600 800 1000 1200 1400 GATE CHARGE QG (nC) Feb. 2009 6