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06/18/08
IRFH7932PbF
HEXFET® Power MOSFET
Notes through are on page 9
Applications
lSynchronous MOSFET for Notebook
Processor Power
lSynchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
Benefits
lVery low RDS(ON) at 4.5V VGS
lLow Gate Charge
lFully Characterized Avalanche Voltage and
Current
l100% Tested for RG
lLead-Free (Qualified up to 260°C Reflow)
lRoHS compliant (Halogen Free)
lLow Thermal Resistance
lLarge Source Lead for more reliable Soldering
PQFN
D
D
D
D
S
G
S
S
VDSS RDS(on) max Qg
30V 3.3m
:
@VGS = 10V 34nC
Absolute Maximum Ratings
Parameter Units
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
c
PD @TA = 25°C Power Dissipation
g
PD @TA = 70°C Power Dissipation
g
Linear Derating Factor
g
W/°C
TJ Operating Junction and
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case
f
––– 2.2
RθJA Junction-to-Ambient
g
––– 40
-55 to + 150
3.1
0.03
2
192
± 20
30
20
V
Max.
24
104
°C/W
°C
W
A
PD - 96140A
IRFH7932PbF
2www.irf.com
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆ΒVDSS
/
∆TJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 2.5 3.3
––– 3.3 3.9
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V
∆VGS(th) Gate Threshold Voltage Coefficient ––– -5.9 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
IGSS Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 59 ––– ––– S
QgTotal Gate Charge ––– 34 51
Qgs1 Pre-Vth Gate-to-Source Charge ––– 7.9 –––
Qgs2 Post-Vth Gate-to-Source Charge ––– 3.6 –––
Qgd Gate-to-Drain Charge ––– 11 –––
Qgodr Gate Charge Overdrive ––– 12 ––– See Fig.17 & 18
Qsw Switch Char
g
e (Qgs2 + Qgd)––– 15 –––
Qoss Output Charge ––– 19 ––– nC
RGGate Resistance ––– 0.7 ––– Ω
td(on) Turn-On Delay Time ––– 20 –––
trRise Time ––– 48 –––
td(off) Turn-Off Delay Time ––– 23 –––
tfFall Time ––– 20 –––
Ciss Input Capacitance ––– 4270 –––
Coss Output Capacitance ––– 830 –––
Crss Reverse Transfer Capacitance ––– 420 –––
Avalanche Characteristics
Parameter Units
EAS
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
d
mJ
IAR
A
va
l
anc
h
e
C
urrent
c
A
Diode Characteristics
Parameter Min. T
y
p. Max. Units
ISContinuous Source Current
(Body Diode)
ISM Pulsed Source Current
(
Bod
y
Diode
)
c
VSD Diode Forward Voltage ––– ––– 1.0 V
trr Reverse Recovery Time ––– 21 32 ns
Qrr Reverse Recovery Charge ––– 33 50 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
ID = 20A
VGS = 0V
VDS = 15V
20
ƒ = 1.0MHz
VGS = 4.5V, ID = 20A
e
VGS = 4.5V
Typ.
–––
RG=1.8Ω
VDS = 15V, ID = 20A
VDS = 24V, VGS = 0V, TJ = 125°C
mΩ
VDS = 24V, VGS = 0V
VDS = 15V
TJ = 25°C, IF = 20A, VDD = 15V
di/dt = 300A/
µ
s
e
See Fi
g
.16
TJ = 25°C, IS = 20A, VGS = 0V
e
showing the
integral reverse
p-n junction diode.
VGS = 20V
VGS = -20V
MOSFET symbol
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ID = 20A
See Fig.15
Max.
14
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A
e
–––
–––
–––
–––
A
3.9
200
VDS = VGS, ID = 100µA
ns
pF
nC
nA
µA
Conditions
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
≤ 60µs PULSE WIDTH
Tj = 25°C
2.3V
VGS
TOP 10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.3V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
≤ 60µs PULSE WIDTH
Tj = 150°C
2.3V
VGS
TOP 10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.3V
1.0 2.0 3.0 4.0 5.0
VGS, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VDS = 15V
≤ 60µs PULSE WIDTH
TJ = 25°C
TJ = 150°C
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 25A
VGS = 10V
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 20406080100
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
VDS= 24V
VDS= 15V
ID= 20A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
0 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TA = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.8
1.2
1.6
2.0
VGS(th) Gate threshold Voltage (V)
ID = 100µA
25 50 75 100 125 150
TJ , Ambient Temperature (°C)
0
5
10
15
20
25
30
ID , Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
Thermal Response ( Z thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W) τi (sec)
1.337662 0.000128
5.012987 0.023270
17.95455 1.0678
15.70617 38.4
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4
a
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Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
VGS
VDS
90%
10%
td(on) td(off)
trtf
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
RD
VGS
RG
D.U.T.
10V
+
-
VDD
VGS
2 3 4 5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
0
2
4
6
8
10
12
14
16
RDS(on), Drain-to -Source On Resistance (mΩ)
TJ = 25°C
TJ = 125°C
ID = 25A
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
5
10
15
20
25
30
35
40
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 5.86A
6.91A
BOTTOM 20.0A
IRFH7932PbF
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D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 17. Gate Charge Test Circuit
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 18. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
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PQFN Part Marking
PQFN Package Details
MARKING CODE
(Per Marking Spec.)
XXXX
XYWWX
XXXXX
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
DATE CODE
ASSEMBLY SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min. last 4 digits of EATI #)
(Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
6
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRFH7932PbF
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Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.071mH, RG = 25Ω, IAS = 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rthjc is guaranteed by design
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/2008
PQFN Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
