Symbol Max p-channe
l
Unit
s
VDS V
VGS V
IDM
IAR
EAR mJ
TJ, TSTG °C
Symbol Devic
e
Typ Ma
x
Unit
s
n-ch 48 62.5 °C/W
n-ch 74 110 °C/W
RθJL n-ch 35 50 °C/W
p-ch 48 62.5 °C/W
p-ch 74 110 °C/W
RθJL p-ch 35 50 °C/W
20
A
14 -20
9.8
Power Dissipation
Continuous Drain
Current AID
PD
Avalanche Current
B
Repetitive avalanche energy L=0.1mH
B
TA=25°C
TA=70°C
Pulsed Drain Current
B
-55 to 150
Maximum Junction-to-Lead
CSteady-State
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s RθJA
Maximum Junction-to-Ambient
A
40 -40
±20
Drain-Source Voltage
±20Gate-Source Voltage
Absolute Maximum Ratings T
A=25°C unless otherwise noted
Parameter Max n-channel
W
6
5
30
2
1.28
-4
-5
2
1.28
RθJA
Maximum Junction-to-Ambient
A
Steady-State
-30
TA=70°C
TA=25°C
Steady-State
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
-55 to 150
Maximum Junction-to-Lead
CSteady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
AO4614B
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel
VDS (V) = 40V, ID = 6A (VGS=10V)
RDS(ON)< 30mΩ (VGS=10V)
RDS(ON)< 38mΩ (VGS=4.5V)
p-channel
VDS (V) = -40V, ID = -5A (VGS=-10V)
RDS(ON)< 45mΩ (VGS= -10V)
RDS(ON)< 63mΩ (VGS= -4.5V)
General Description
The AO4614B/L uses advanced trench technology
MOSFETs to provide excellent R
DS(ON) and low gate
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications.
AO4614B and AO4614BL are electrically identical.
-RoHS Compliant
-AO4614BL is Halogen Free
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8 G2
D2
S2 G1
D1
S1
n-channel p-channel
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4614B
Symbol Min Typ Max Units
BVDSS 40 V
1
TJ=55°C 5
IGSS ±100 nA
VGS(th) 1.7 2.5 3 V
ID(ON) 30 A
24 30
TJ=125°C 36 45
30 38
gFS 19 S
VSD 0.76 1 V
IS2A
Ciss 516 650 pF
Coss 82 pF
Crss 43 pF
Rg4.6 Ω
Qg (10V) 8.9 10.8 nC
Qg (4.5V) 4.3 5.6 nC
Qgs 2.4 nC
Qgd 1.4 nC
tD(on) 6.4 ns
tr3.6 ns
tD(off) 16.2 ns
tf6.6 ns
trr 18 24 ns
Qrr 10 nC
9
12
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Output Capacitance
Input Capacitance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Reverse Transfer Capacitance
Gate resistance
IS=1A,VGS=0V
VGS=10V, ID=6A
Diode Forward Voltage
VGS=10V, VDS=20V, RL=3.3Ω,
RGEN=3Ω
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Total Gate Charge
VGS=10V, VDS=20V,
ID=6A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
VGS=4.5V, ID=5A
VDS=5V, ID=6A
mΩ
Gate Threshold Voltage VDS=VGS ID=250µA
On state drain current VGS=10V, VDS=5V
µA
Gate-Body leakage current VDS=0V, VGS= ±20V
N Channel Electrical Characteristics (T
J=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs
Total Gate Charge
VGS=0V, VDS=20V, f=1MHz
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Rev0 : Sept 2007
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
9
12
0
5
10
15
20
25
30
35
40
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=3.5V
4V
10V 5V
4.5V
0
5
10
15
20
25
30
2 2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
20
22
24
26
28
30
32
34
36
0 5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
0.0001
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=10V
ID=6A
VGS=4.5V
I
D
=5A
10
20
30
40
50
60
70
80
345678910
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
V
=4.5V
V
=10V
ID=6A
25°C
125°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
9
12
0
2
4
6
8
10
0246810
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
200
400
600
800
0 10203040
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
1
10
100
1000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W )
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss
Cr
ss
0.01
0.1
1
10
100
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0.1s
1s
10s
D
C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
VDS=20V
ID= 6A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=74°C/W
T
on
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4614B
Symbol Min Typ Max Units
BVDSS -40 V
-1
TJ=55°C -5
IGSS ±100 nA
VGS(th) -1.7 -2 -3 V
ID(ON) -30 A
36 45
TJ=125°C 52 65
50 63
gFS 13 S
VSD -0.76 -1 V
IS-2 A
Ciss 940 1175 pF
Coss 97 pF
Crss 72 pF
Rg14 Ω
Qg (-10V) 17 22 nC
Qg (-4.5V) 7.9 10 nC
Qgs 3.4 nC
Qgd 3.2 nC
tD(on) 6.2 ns
tr8.4 ns
tD(off) 44.8 ns
tf41.2 ns
trr 21 27 ns
Qrr 14 nC
9
12
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
P-Channel Electrical Characteristics (T
J=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage ID= -250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current VDS= -40V, VGS=0V µA
Gate-Body leakage current VDS=0V, VGS= ±20V
Gate Threshold Voltage VDS=VGS ID= -250µA
On state drain current VGS= -10V, VDS= -5V
mΩ
VDS= -5V, ID= -5A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
VGS= -10V, ID= -5A
VGS= -4.5V, ID= -4A
Diode Forward Voltage IS= -1A,VGS=0V
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS= -20V, f=1MHz
Gate resistance
Output Capacitance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS= -10V, VDS= -20V,
ID= -5A
VGS= -10V, VDS= -20V, RL=4Ω,
RGEN=3Ω
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Total Gate Charge
Body Diode Reverse Recovery Time IF= -5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF= -5A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the
t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
Rev0 : Sept 2007
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
9
12
0
5
10
15
20
25
30
012345
-VDS (Volts)
Fig 12: On-Region Characteristics
-ID (A)
VGS=-3.5V
-4V
-10V
-5V
-4.5V
0
5
10
15
20
25
30
1.5 2 2.5 3 3.5 4 4.5
-VGS(Volts)
Figure 13: Transfer Characteristics
-ID(A)
30
35
40
45
50
55
60
65
0 5 10 15 20
-ID (A)
Figure 14: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
0.0001
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts)
Figure 17: Body-Diode Characteristics
-IS (A)
25°C
125°C
0.7
0.9
1.1
1.3
1.5
1.7
-50 -25 0 25 50 75 100 125 150
Temperature (°C)
Figure 15: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=-10V
ID=-5A
VGS=-4.5V
ID=-4A
30
50
70
90
110
130
345678910
-VGS (Volts)
Figure 16: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=-5V
V
=-4.5V
V
=-10V
ID=-5A
25°C
125°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
9
12
0
2
4
6
8
10
0 3 6 9 121518
Qg (nC)
Figure 18: Gate-Charge Characteristics
-VGS (Volts)
0
200
400
600
800
1000
1200
1400
0 10203040
-VDS (Volts)
Figure 19: Capacitance Characteristics
Capacitance (pF)
Ciss
1
10
100
1000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 21: Single Pulse Power Rating Junction-t
o
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss
Cr
ss
0.01
0.1
1
10
100
0.1 1 10 100
-VDS (Volts)
-ID (Amps)
Figure 20: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0.1s
1s
10s
DC
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
VDS=-20V
ID= -5A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=74°C/W
T
o
nT
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com