
MB High Voltage Series
2
Bulletin I27177 03/03
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TJJunction temperature range - 55 to 150 oC
Tstg Storage temperature range - 55 to 150 oC
RthJC Max. thermal resistance junction to case 1.7 1.35 K/W Per bridge
RthCS Max. thermal resistance, case to heatsink 0.2 K/W Mounting surface , smooth, flat and greased
wt Approximate weight 20 g
T Mounting Torque ± 10% 2.0 Nm Bridge to heatsink
Thermal and Mechanical Specifications
Voltage VRRM , maximum repetitive VRSM , maximum non- I RRM max.
Type number Cod e peak reverse voltage repetitive peak rev. voltage @ TJ max.
VVmA
26MB..A 140 1400 1500 2
36MB..A 160 1600 1700
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters 26MB-A 36MB-A Units Conditions
IOMaximum DC output current 25 35 A Resistive or inductive load
20 28 A Capacitive load
@ Case temperature 65 60 °C
IFSM Maximum peak, one-cycle 400 475 A t = 10ms No voltage
non-repetitive forward current 420 500 t = 8.3ms reapplied
335 400 t = 10ms 100% VRRM
350 420 t = 8.3ms reapplied Initial TJ = TJ max.
I2t Maximum I2t for fusing 790 1130 A2s t = 10ms No voltage
725 1030 t = 8.3ms reapplied
560 800 t = 10ms 100% VRRM
512 730 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 5.6 11.3 KA2√sI
2t for time tx = I2√t x √tx ;
0.1 ≤ tx ≤ 10ms, VRRM = 0V
VF(TO)1 Low-level of threshold voltage 0.70 0.74 V (16.7% x π x IF(AV) < I < π x IF(AV)), @ TJ max.
VF(TO)2 High-level of threshold voltage 0.75 0.79 (I > π x IF(AV)), @ TJ max.
rt1 Low-level forward slope resistance 7.0 5.5 m Ω(16.7% x π x IF(AV) < I < π x IF(AV)), @ TJ max.
rt2 High-level forward slope resistance 6.4 5.2 (I > π x IF(AV)), @ TJ max.
VFM Maximum forward voltage drop 1.25 1.3 V TJ = 25 oC, IFM = 40APK (26MB)
TJ = 25 oC, IFM = 55APK (36MB)
IRRM Max. DC reverse current 10 10 µAT
J = 25 oC, per diode at VRRM
VINS RMS isolation voltage base plate 2700 2700 V f = 50 Hz, t = 1s
Forward Conduction
Parameters 26MB-A 36MB-A Units Conditions
tp = 400µs