A Business Partner of Renesas Electronics Corporation. Preliminary NE85630 / 2SC4226 JEITA Part No. Data Sheet R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION UT The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES * Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz * High gain : S21e2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz ORDERING INFORMATION Part Number Order Number NE85630 2SC4226 NE85630-A 2SC4226-A NE85630-T1-A 2SC4226-T1-A Quantity Supplying Form 3-pin super 50 pcs (Non reel) * 8 mm wide embossed taping Minimold (Pb-Free) 3 kpcs/reel * Pin 3 (Collector) face the perforation side of the tape SE - NE85630-T1 2SC4226-T1 Package Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3 V IC 100 mA 150 mW PH A <R> O * 3-pin super minimold package Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Free air CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 Page 1 of 6 A Business Partner of Renesas Electronics Corporation. NE85630 / 2SC4226 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 - - 1.0 A Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 - - 1.0 A VCE = 3 V, IC = 7 mA 40 110 250 - VCE = 3 V, IC = 7 mA 3.0 4.5 - GHz DC Current Gain hFE Note 1 Gain Bandwidth Product fT Insertion Power Gain S21e VCE = 3 V, IC = 7 mA, f = 1 GHz 7 9 - dB NF VCE = 3 V, IC = 7 mA, f = 1 GHz - 1.2 2.5 dB VCB = 3 V, IE = 0, f = 1 MHz - 0.7 1.5 pF 2 Noise Figure Reverse Transfer Capacitance UT RF Characteristics Cre Note 2 Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% hFE CLASSIFICATION R23/Y23 R24/Y24 Marking R23 R24 hFE Value 40 to 80 70 to 140 R25/Y25 R25 125 to 250 SE - Rank PH A <R> O 2. Collector to base capacitance when the emitter grounded R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 Page 2 of 6 A Business Partner of Renesas Electronics Corporation. NE85630 / 2SC4226 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Free Air 200 150 100 50 0 25 50 75 100 125 150 Ambient Temperature TA (C) 1 0.5 0.2 0.1 1 2 5 O 25 Collector Current IC (mA) 0.5 20 160 A 50 140 20 120 100 15 IB = 20 A 5 10 Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product fT (GHz) 100 50 20 1 5 10 50 Collector Current IC (mA) A 40 A 5 20 A 60 A Base to Emitter Voltage VBE (V) VCE = 3 V A 80 A 10 0 1 PH A 200 10 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE = 3 V 0 DC Current Gain hFE 2 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 10 10 0.5 f = 1 MHz SE - Collector Current IC (mA) 20 5 UT Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 250 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE VCE = 3 V f = 1 GHz 10 5 2 1 0.5 1 5 10 50 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 Page 3 of 6 A Business Partner of Renesas Electronics Corporation. NE85630 / 2SC4226 15 VCE = 3 V IC = 7 mA 20 Insertion Power Gain |S21e|2 (dB) 16 12 8 4 0 0.1 0.2 0.5 1 2 1 0 0.5 1 1 5 10 50 100 SE - Noise Figure NF (dB) 4 2 5 O VCE = 3 V f = 1 GHz 3 10 Collector Current IC (mA) NOISE FIGURE vs. COLLECTOR CURRENT 5 VCE = 3 V f = 1 GHz 0 0.5 5 Frequency f (GHz) 6 INSERTION POWER GAIN vs. COLLECTOR CURRENT UT Insertion Power Gain |S21e|2 (dB) 24 INSERTION POWER GAIN vs. FREQUENCY 5 10 50 100 Collector Current IC (mA) PH A Remark The graphs indicate nominal characteristics. R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 Page 4 of 6 A Business Partner of Renesas Electronics Corporation. NE85630 / 2SC4226 S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] [Device Parameters] PH A SE - O UT URL http://www2.renesas.com/microwave/en/download.html R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 Page 5 of 6 A Business Partner of Renesas Electronics Corporation. NE85630 / 2SC4226 PACKAGE DIMENSIONS 3-PIN SUPER MINIMOLD (UNIT: mm) 2.10.1 0.3+0.1 -0 3 Marking 0 to 0.1 O 0.15+0.1 -0.05 0.90.1 0.3 1 UT 2 0.65 0.65 2.00.2 0.3+0.1 -0 1.250.1 SE - PIN CONNECTIONS 1. Emitter 2. Base 3. Collector PH A (EIAJ : SC-70) R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 Page 6 of 6 NE85630 / 2SC4226 Data Sheet Revision History Rev. Dec 2003 Jun 29, 2011 Description Summary Page - p.1 p.2 Previous No. :PU10450EJ01V0DS Modification of ORDERING INFORMATION Modification of hFE CLASSIFICATION PH A SE - O UT - 2.00 Date All trademarks and registered trademarks are the property of their respective owners. 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