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Preliminary
Data Sheet
NE85630 / 2SC4226
NPN Silicon RF Transistor
NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
DESCRIPTION
The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin
super minimold package.
FEATURES
•Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
•High gain : ⏐S21e⏐2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
•3-pin super minimold package
ORDERING INFORMATION
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gnipat dessobme ediw mm 8• )leer noN( scp 05
2SC4226-T1
2SC4226-T1-A
NE85630-T1 NE85630-T1-A
2SC4226 2SC4226-A
NE85630 NE85630-A 3-pin super
Minimold
(Pb-Free) 3 kpcs/reel • Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3 V
I tnerruC rotcelloC C 100 mA
Total Power Dissipation Ptot Note 150 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
<R>
R09DS0022EJ0200
Rev.2.00
Jun 29, 2011
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Part No.
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ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
scitsiretcarahC CD
Collector Cut-off Current ICBO VCB = 10 V, IE = 0 − − 1.0
μ
A
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 − − 1.0
μ
A
h niaG tnerruC CD FE Note 1 VCE = 3 V, IC = 7 mA 40 110 250 –
scitsiretcarahC FR
Gain Bandwidth Product fT VCE = 3 V, IC = 7 mA 3.0 4.5 – GHz
Insertion Power Gain ⏐S21e⏐2 VCE = 3 V, IC = 7 mA, f = 1 GHz 7 9 – dB
V FN erugiF esioN CE = 3 V, IC = 7 mA, f = 1 GHz −1.2 2.5 dB
Reverse Transfer Capacitance Cre Note 2 VCB = 3 V, IE = 0, f = 1 MHz −0.7 1.5 pF
Notes 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank R23/Y23 R24/Y24 R25/Y25
Marking R23 R24 R25
hFE Value 40 to 80 70 to 140 125 to 250
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TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
10
5
15
20
0150
40 A
μ
60 A
μ
80 A
μ
100 A
μ
120 A
μ
140 A
μ
160 A
μ
I
B
= 20 A
μ
V
CE
= 3 V
200
50
100
10
20
1 5 10 055.0
DC Current Gain h
FE
Collector Current I
C
(mA)
COLLECTOR CURRENT
DC CURRENT GAIN vs.
V
CE
= 3 V
f = 1 GHz
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
20
2
5
10
15 10 0515.0
250
200
150
100
50
025 50 75 100 125 150
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
5
0.2
0.5
1
2
0.1 21 5 10 20 50
f = 1 MHz
V
CE
= 3 V
20
10
0 0.5 1
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Remark The graphs indicate nominal characteristics.
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V
CE
= 3 V
I
C
= 7 mA
Frequency f (GHz)
INSERTION POWER GAIN
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
24
20
12
16
8
0
4
0.1 0.2 0.5 1 2 5
V
CE
= 3 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
15
10
0
5
0.5 5 10 50 0011
6
0
1
2
3
4
5
0.5 1 5 10 50 100
Collector Current I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise Figure NF (dB)
V
CE
= 3 V
f = 1 GHz
Remark The graphs indicate nominal characteristics.
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S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of
the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
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PACKAGE DIMENSIONS
3-PIN SUPER MINIMOLD (UNIT: mm)
0.9±0.1
0.3
0.15
+0.1
–0.05
0 to 0.1
Marking
2.0±0.2
0.65 0.65
0.3
+0.1
–0
0.3
+0.1
–0
1
2
3
2.1±0.1
1.25±0.1
1. Emitter
2. Base
3. Collector
(EIAJ : SC-70)
PIN CONNECTIONS
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All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History NE85630 / 2SC4226 Data Sheet
Description
Rev. Date Page Summary
− Dec 2003 − Previous No. :PU10450EJ01V0DS
2.00 Jun 29, 2011 p.1 Modification of ORDERING INFORMATION
p.2 Modification of hFE CLASSIFICATION
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CEL:
NE85630-T1-A 2SC4226-T1-A 2SC4226-A