4-271
TELCOM SEMICONDUCTOR, INC.
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TC4626
TC4627
POWER CMOS DRIVERS WITH VOL TAGE TRIPLER
FEATURES
■Power driver with on Board Voltage Booster
■Low IDD ......................................................... < 4 mA
■Small Package ........................................8-Pin PDIP
■Under-Voltage Circuitry
■Fast Rise-Fall Time..................< 40nsec @ 1000pF
■Below-Rail Input Protection
APPLICATIONS
■Raises 5V to drive higher-Vgs (ON) MOSFETs
■Eliminates one system power supply
GENERAL DESCRIPTION
The TC4626/4627 are single CMOS high speed drivers
with an on-board voltage boost circuit. These parts work with
an input supply voltage from 4 to 6 volts. The internal voltage
booster will produce a VBOOST potential up to 12 volts above
VIN. This VBOOST is not regulated, so its voltage is dependent
on the input VDD voltage and output drive loading require-
ments. An internal undervoltage lockout circuit keeps the
output in a low state when VBOOST drops below 7.8 volts.
Output is enabled when VBOOST is above 11.3 volts.
PIN CONFIGURATIONS
1
2
3
45
6
7
8
IN
OUT
C1+
C2
GND
1
2
3
413
14
15
16
VBOOST
NC
IN
C1–
NC
C1+
NC
NC
VDD
C1–VDD
5
6
7
89
10
11
12
C2
NC
NC
GND
NC
VBOOST
NC
OUT
TC4626
TC4627
TC4626
TC4627
NOTE: Pin numbers correspond to 8-pin package
ORDERING INFORMATION
Part No. Package Temp. Range
TC4626COE 16-Pin SOIC (Wide) – 55°C to +125°C
TC4626CPA 8-Pin Plastic DIP – 40°C to +85°C
TC4626EOE 16-Pin SOIC (Wide) – 40°C to +85°C
TC4626EPA 8-Pin Plastic DIP – 0°C to +70°C
TC4626MJA 8-Pin CerDIP – 0°C to +70°C
TC4627COE 16-Pin SOIC (Wide) – 55°C to +125°C
TC4627CPA 8-Pin Plastic DIP – 40°C to +85°C
TC4627EOE 16-Pin SOIC (Wide) – 40°C to +85°C
TC4627EPA 8-Pin Plastic DIP – 0°C to +70°C
TC4627MJA 8-Pin CerDIP – 0°C to +70°C
VOLTAGE
BOOSTER
CLOCK
C1+
C1-
C2
IN
GND
EXT
OUTPUT
VBOOST
EXT
V = 2 x VDD
VDD
1
2
3
8
7
4
6
5
C3
NON-
INVERTING
4627
INVERTING
4626
(UNREGULATED 3 x VDD)
UV LOCK
C2
EXT
C1
+
+
+
FUNCTIONAL BLOCK DIAGRAM
TC4626/7-7 10/21/96
8-Pin Plastic DIP
/CerDIP 16-Pin SOIC (Wide)
4-272 TELCOM SEMICONDUCTOR, INC.
TC4626
TC4627
POWER CMOS DRIVERS WITH VOL TAGE TRIPLER
ABSOLUTE MAXIMUM RATINGS
Package Power Dissipation (TA ≤ 70°C)
PDIP .................................................................730mW
CerDIP ..............................................................800mW
SOIC .................................................................760mW
Derating Factor
PDIP ....................................... 5.6 mW/°C Above 36°C
CerDIP ........................................................ 6.0 mW/°C
Supply Voltage ...........................................................6.2V
Input Voltage, Any Terminal......VS + 0.3V to GND – 0.3V
Operating Temperature: M Version ......– 55°C to +125°C
E Version.........– 40°C to +85°C
C Version..............0°C to +70°C
Maximum Chip Temperature.................................+150°C
Storage Temperature ............................– 65°C to +150 °C
Lead Temperature (10 sec)...................................+300°C
ELECTRICAL CHARACTERISTICS: TA = 25°C VDD = 5V C1 = C2 = C3 10µF unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Driver Input
VIH Logic 1, Input Voltage 2.4 — — V
VIL Logic 0, Input Voltage — — 0.8 V
IIN Input Current 0V ≤ VIN ≤ VDRIVE – 1 — 1 µA
Driver Output
VOH High Output Voltage VBOOST – 0.025 — — V
VOL Low Output Voltage — — 0.025 V
ROOutput Resistance, High IOUT = 10 mA, VDD = 5V — 10 15 Ω
ROOutput Resistance, Low IOUT = 10 mA, VDD = 5V — 8 10 Ω
IPK Peak Output Current — 1.5 — A
Switching Time
tRRise Time Test Figure 1,2 — 33 40 nsec
tFFall Time Test Figure 1,2 — 27 35 nsec
tD1 Delay Time Test Figure 1,2 — 35 45 nsec
tD2 Delay Time Test Figure 1,2 — 45 55 nsec
FMAX Maximum Switching Frequency Test Figure 1 1.0 — — MHz
VDD = 5V, VBOOST > 8.5V
Voltage Booster
R3Voltage Tripler Output IL = 10 mA, VDD = 5V — 300 400 Ω
Source Resistance
R2Voltage Doubler Output — 120 200 Ω
Source Resistance
FOSC Oscillator Frequency 12 — 28 kHz
VOSC Oscillator Amplitude RLOAD = 10kΩ4.5 — 10 V
Measured at C1-
UV Undervoltage Threshold 7.0 7.8 8.5 V
@ VBOOST
VSTART Start Up Voltage 10.5 11.3 12 V
@ VBOOST
VBOOST @VDD = 5V No Load 14.6 — — V
Power Supply
IDD Power Supply Current VIN = LOW or HIGH — — 2.5 mA
VDD Supply Voltage 4.0 — 6.0 V
4-273
TELCOM SEMICONDUCTOR, INC.
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Symbol Parameter Test Conditions Min Typ Max Unit
Driver Input
VIH Logic 1, Input Voltage 2.4 — — V
VIL Logic 0, Input Voltage — — 0.8 V
IIN Input Current 0V ≤ VIN ≤ VBOOST – 10 — 10 µA
Driver Output
VOH High Output Voltage VDRIVE – 0.025 — — V
VOL Low Output Voltage — — 0.025 V
ROOutput Resistance, High IOUT = 10 mA, VDD = 5V
C & E Version (TA = 70°C or 85°C) — 15 20 Ω
M Version (TA = 125°C) — 15 25
ROOutput Resistance, Low IOUT = 10 mA, VDD = 5V
C & E Version (TA = 70°C or 85°C) — 10 13 Ω
M Version (TA = 125°C) — 10 15
IPK Peak Output Current — 1.5 — A
Switching Time
tRRise Time Test Figure 1,2 — — 55 nsec
tFFall Time Test Figure 1,2 — — 50 nsec
tD1 Delay Time Test Figure 1,2 — — 60 nsec
tD2 Delay Time Test Figure 1,2 — — 70 nsec
FMAX Maximum Switching Frequency Test Figure 1 750 — — kHz
VDD = 5V, VBOOST > 8.5V
Voltage Booster
R3Voltage Boost Output IL = 10 mA, VDD = 5V — 400 500 Ω
Source Resistance
R2Voltage Doubler Output — 170 300 Ω
Source Resistance
FOSC Oscillator Frequency 5 — 50 kHz
VOSC Oscillator Amplitude RLOAD = 10kΩ4.5 — 10 V
Measured at C1-
UV Undervoltage Threshold 7.0 7.8 8.5 V
@ VBOOST
VSTART Start Up Voltage 10.5 11.3 12 V
@ VBOOST
VBOOST @VDD = 5V No Load 14.6 — — V
Power Supply
IDD Power Supply Current VIN = LOW or HIGH — — 4 mA
VDD Supply Voltage 4.0 — 6.0 V
POWER CMOS DRIVERS WITH VOL TAGE TRIPLER
TC4626
TC4627
ELECTRICAL CHARACTERISTICS: TA = Over Operating Temperature Range VDD = 5V C1 = C2 = C3 10µF
unless otherwise specified.
4-274 TELCOM SEMICONDUCTOR, INC.
TC4626
TC4627
POWER CMOS DRIVERS WITH VOL TAGE TRIPLER
Figure 1. Inverting Driver Switching Time
* 100kHz SQUARE WAVE, tr = tf < 10nsec
SWITCHING TIME TEST CIRCUITS
Figure 2. Non-Inverting Driver Switching Time
* 100kHz SQUARE WAVE, tr = tf < 10nsec
OUTPUT
INPUT
10 µF
VBOOST
+5V
INPUT*
10%
90%
10%
90%
10%
90%
OUTPUT
tD1 tFt
tD2
CL = 1000 pF
C3
0V
0V
TC4626
R
10 µF C1+
C1-
C1
10 µF
C2VDD = 5V
C2
VBOOST
38
7
1
6
5
2
4
Ceramic
0.1 µF
90%
10%
10% 10%
tD1 tRtD2 tF
90%
+5V
INPUT*
OUTPUT
0V
0V
90%
OUTPUT
INPUT
10 µF
VBOOST
CL = 1000 pF
C3
TC4627
10 µF C1+
C1-
C1
10 µF
C2VDD = 5V
VBOOST
C2
38
7
1
6
5
2
4
0.1µF
Ceramic
4-275
TELCOM SEMICONDUCTOR, INC.
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POWER CMOS DRIVERS WITH VOL TAGE TRIPLER
TC4626
TC4627
The voltage booster is an unregulated voltage tripler
circuit. The tripler consists of three sets of internal switches
and three external capacitors. S1a and S1b charge capaci-
tor C1 to VDD potential. S2a and S2b add C1 potential to VDD
input to charge C2 to 2 x VDD. S3a and S3b add C1 potential
to C2 to charge C3 to 3 x VDD. The position of the switches
is controlled by the internal 4 phase clock.
C3
C2
6
3
8
2
C1
(4 To 6V)
S1a
S1b
GND
4
S2a
S2b
2 x VDD
3 x VDD, VBOOST
6
S3b
S3a
1
VDD
Voltage Booster Position of Switches
PIN 2
VOLTAGE
PIN 1
VOLTAGE
3 x VDD
2 x VDD
VDD
2 x VDD
VDD
0
ON
OFF
S1
ON
OFF
S2
ON
OFF
S3
BOOSTER FUNCTION
Pin 1 & 2 Waveforms
4-276 TELCOM SEMICONDUCTOR, INC.
TC4626
TC4627
POWER CMOS DRIVERS WITH VOL TAGE TRIPLER
TYPICAL CHARACTERISTICS
VOUT Hi (Volts)
VOUT Hi (Volts)
TC4626 VOH vs. Frequency
VS = 5V, Temperature = –55°CTC4626 VOH vs. Frequency
VS = 5V, Temperature = 25°C
5500 1,000 1,500 2,000 2,500 3,000 3,500
16
14
12
10
8
6
4
2
0
14
12
10
8
6
4
2
010 500 1,000 1,500 2,000 2,500 3,000 3,500
FREQUENCY (kHz) FREQUENCY (kHz)
Time (nsec)
-40 -20 0 20 40 60 80
60
50
40
30
20
0
Delay Time vs. Temperature
VS = 5V, CLOAD= 1000 pF
100
TD2
TR
TEMPERATURE (°C)
Delay Time vs. Temperature
VS = 6V, CLOAD= 1000 pF
TEMPERATURE (°C)
10
120
Time (nsec)
-40 -20 0 20 40 60 80
TD1
50
40
30
20
0100
TD2
TR
10
120
TD1
470pF
2200pF 1000pF
470pF
2200pF 1000pF
FREQUENCY (kHz)
Time (nsec)
-40 -20 0 20 40 60 80
100
80
60
40
20
0
TC4626 VOH vs. Frequency
VS = 5V, Temperature = 125°CDelay Time vs. Temperature
VS = 4V, CLOAD = 1000pF
100
5500 1,000 1,500 2,000 2,500 3,000 3,500
14
12
10
8
6
4
2
0
TR
TEMPERATURE (°C)
470pF
2200pF 1000pF
120
TF
TF TF
TD1
TD2
VOUT Hi (Volts)
Input = 0-5V;
TR & TF <10nsec;
@ <20 kHz
Input = 0-5V;
TR & TF <10nsec;
@ <20 kHz
Input = 0-5V;
TR & TF <10nsec;
@ <20 kHz
4-277
TELCOM SEMICONDUCTOR, INC.
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POWER CMOS DRIVERS WITH VOL TAGE TRIPLER
TC4626
TC4627
TYPICAL CHARACTERISTICS (Cont.)
VOUT HI (Volts)
1234567
13
12
11
10
9
8
TC4626 VOH vs. Frequency
VS = 5V, Temperature = 25°C
8
FREQUENCY x 100 kHz
9100
14
15
16
2,200 pF
470 pF
1,000 pF
VOUT HI (Volts)
1234567
13
12
11
10
9
8
TC4626 VOH vs. Frequency
VS = 5V, Temperature = -55°C
8
FREQUENCY x 100 kHz
9100
14
15
16
2,200 pF
470 pF
1,000 pF
VOUT HI (Volts)
1234567
13
12
11
10
9
8
TC4626 VOH vs. Frequency
VS = 5V, Temperature = 125°C
8
FREQUENCY x 100 kHz
9100
14
15
16
470 pF
2,200 pF
1,000 pF
