LX5510
PRELIMINARY DATA SHEET
C
CO
ON
NF
FI
ID
DE
EN
NT
TI
IA
AL
L
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright 2003
Rev. 0.3g, 2003-05-08
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
INTEGRATED PRODUCTS
DESCRIPTION
The LX5510 is a power amplifier
optimized for WLAN applications in
the 2.4-2.5GHz frequency range. The
PA is implemented as a two-stage
monolithic microwave integrated
circuit (MMIC) with active bias and
input/output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) IC process
(MOCVD). With single low voltage
supply of 3.3V 20dB power gain
between 2.4-2.5GHz, at a low
quiescent current of 65mA.
For +19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3.0%, and consumes 120mA total DC
current with the nominal 3.3V bias.
With increased bias of 4.5V EVM is ~
5% at 23dBm.
The LX5510 is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5510 an ideal
solution for medium-gain power
amplifier requirements for IEEE
802.11b/g applications
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
2.4 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~65mA
Power Gain ~20dB @ 2.45GHz
and Pout = 19dBm
Total Current 120mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3x3mm2)
Low Profile (0.9mm)
APPLICATIONS
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER
INFO
LQ Plastic MLPQ
16 pin
LX5510-LQ
Note: Available in Tape & Reel.
Append the letter “T” to the part number.
(i.e. LX5510-LQT)
L
LX
X5
55
51
10
0
LX5510
PRELIMINARY DATA SHEET
C
CO
ON
NF
FI
ID
DE
EN
NT
TI
IA
AL
L
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Copyright 2003
Rev. 0.3g, 2003-05-08
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
INTEGRATED PRODUCTS
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................400mA
Total Power Dissipation....................................................................................2W
RF Input Power........................................................................................... 15dBm
Maximum Junction Temperature (TJ max) .................................................. 150°C
Operation Ambient Temperature ...................................................-40°C to +85°C
Storage Temperature....................................................................-60°C to +150°C
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
x denotes respective pin designator 1, 2, or 3
PACKAGE PIN OUT
RF IN
RF IN
VB1
VB2
VCC
RF OUT
RF OUT
VC1
VC2 *
1
2
3
4
5678
9
10
11
12
13 14 15 16
* Pad is Ground
GND
GND
GND
GND
GND
GND
GND
LQ PACKAGE
(Bottom View)
FUNCTIONAL PIN DESCRIPTION
Name Description
RF IN RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first
stage.
VB1 Bias current control voltage for the first stage.
VB2 Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control
voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge.
VCC Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2
pins, resulting in a single supply voltage (referred to as Vc).
RF OUT RF output for the power amplifier.
VC1
Power supply for first stage amplifier. The VC1 feedline should be terminated with a 4pF bypass capacitor 50mil
apart from the device, followed by a 8.2nH blocking inductor at the supply side. This pin can be combined with
VC2 and VCC pins, resulting in a single supply voltage (referred to as Vc).
VC2
Power supply for second stage amplifier. The VC2 feedline should be driven with a 8.2nH AC blocking inductor
and 1uF bypass capacitor. This pin can be combined with VC1 and VCC pins, resulting in a single supply
voltage (referred to as Vc).
GND The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.
P
PA
AC
CK
KA
AG
GE
E
D
DA
AT
TA
A
LX5510
PRELIMINARY DATA SHEET
C
CO
ON
NF
FI
ID
DE
EN
NT
TI
IA
AL
L
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
Copyright 2003
Rev. 0.3g, 2003-05-08
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
INTEGRATED PRODUCTS
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the operating ambient temperature 0°C≤ TA ≤ 70°C except where
otherwise noted and the following test conditions: Vc = 3.3V, Vref = 2.85V, Icq = 65mA, TA = 25°C
LX5510
Parameter Symbol Test Conditions Min Typ Max
Units
Frequency Range f 2.4 2.5 GHz
Power Gain at Pout = 19dBm Gp 20 dB
EVM at Pout = 19dBm 64QAM / 54Mbps 3.0 %
Total Current at Pout = 19dBm Ictotal 120 mA
Quiescent Current Icq 65 mA
Bias Control Reference Current Iref For Icq = 65mA 1.2 mA
Small-Signal Gain S21 20 dB
Gain Flatness ∆S21 Over 100MHz ±0.5 dB
Gain Variation Over
Temperature ∆S21 -40°C to +85°C TBD dB
Input Return Loss S11 10 dB
Output Return Loss S22 10 dB
Reverse Isolation S12 -40 dB
Second Harmonic Pout = 19dBm -60 dBc
Third Harmonic Pout = 19dbm -50 dBc
Noise Figure NF TBD dB
Ramp-On Time tON 10 ~ 90% 100 ns
Note: All measured data was obtained on a 10mil GETEK evaluation board without heat sink.
E
EL
LE
EC
CT
TR
RI
IC
CA
AL
LS
S
LX5510
PRELIMINARY DATA SHEET
C
CO
ON
NF
FI
ID
DE
EN
NT
TI
IA
AL
L
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
Copyright 2003
Rev. 0.3g, 2003-05-08
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
INTEGRATED PRODUCTS
S PARAMETER (3.3V)
POWER SWEEP
m1
freq=2.400GHz
dB(S(2,1))=19.788
m2
freq=2.450GHz
dB(S(2,1))=19.421
m7
freq=2.500GHz
dB(S(2,1))=18.846
2.2 2.4 2.6 2.82.0 3.0
-40
-30
-20
-10
0
10
20
30
-50
40
Frequency GHz
dB(S(1,1))
dB(S(1,2))
dB(S(2,1))
m1
m2
m7
dB(S(2,2))
Figure 1 – S-Parameter Data
(VC = 3.3V, VREF = 2.85V, Icq = 65mA)
Figure 2 – Power Sweep
(Vc = 3.3V, Vref = 2.85V, Icq = 65mA)
EVM DATA
ACP DATA
0
1
2
3
4
5
6
7
8
17 18 19 20 21
Output Power (dBm)
EVM (%)
100
110
120
130
140
150
160
170
180
Current (mA)
EVM_PA_ONLY CURRENT_3.3V
Figure 3 – EVM Data with 54Mbps 64QAM OFDM
(Vc = 3.3V, Vref = 2.85V, Icq = 65mA, Frequency = 2.45GHz)
-55
-52.5
-50
-47.5
-45
-42.5
-40
17 18 19 20 21
Output Power (dBm)
ACP (dBc)
ACP_30MHz
Figure 4 – ACP Data with 54Mbps 64QAM OFDM
(VC = 3.3V, Vref = 2.85V, Icq = 65mA, Frequency = 2.45GHz)
CCK SPECTRUM
S PARAMETER (4.5V)
Figure 5 – Spectrum with 23dBm 11Mb/s CCK
(Vc = 3.3V, Vref =2.85V, Icq = 65mA, Ic = 180mA, Freq = 2.45GHz)
m1
freq=2.400GHz
S21 (dB)=20.041
m2
freq=2.450GHz
S21 (dB)=19.710
m7
freq=2.500GHz
S21 (dB)=19.143
2.2 2.4 2.6 2.82.0 3.0
-40
-30
-20
-10
0
10
20
30
-50
40
frequency (GHz)
dB(S(1,1))
dB(S(1,2))
dB(S(2,1))
m1
m2
m7
dB(S(2,2))
Figure 6 – S-Parameter Data
(Vc = 4.5V, Vref = 2.85V, Icq = 65mA)
G
GR
RA
AP
PH
HS
S
LX5510
PRELIMINARY DATA SHEET
C
CO
ON
NF
FI
ID
DE
EN
NT
TI
IA
AL
L
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
Copyright 2003
Rev. 0.3g, 2003-05-08
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
INTEGRATED PRODUCTS
POWER SWEEP
EVM DATA
Figure 7 – Power Sweep
(Vc = 4.5V, Vref = 2.85V, Icq = 65mA)
0
1
2
3
4
5
6
7
8
17 18 19 20 21 22 23 24
Output Power (dBm)
EVM (%)
100
110
120
130
140
150
160
170
180
Current (mA)
EVM_PA_ONLY CURRENT_4.5V
Figure 8 – EVM Data with 54Mbps 64QAM OFDM
(Vc = 4.5V, Vref = 2.85V, Icq =65mA, Frequency =2.45GHz)
ACP DATA
CCK SPECTRUM
-60
-57.5
-55
-52.5
-50
-47.5
-45
17 18 19 20 21 22 23 24
Output Power (dBm)
ACP (dBc)
ACP_30MHz
Figure 9 – ACP Data with 54Mbps 64QAM OFDM
(Vc = 4.5V, Vref = 2.85V, Icq = 65mA, Frequency = 2.45GHz)
Figure 10 – Spectrum with 23dBm 11Mb/s CCK
(Vc = 4.5V, Vref = 2.85V, Icq = 65mA, Ic = 180mA, Freq = 2.45GHz)
G
GR
RA
AP
PH
HS
S
LX5510
PRELIMINARY DATA SHEET
C
CO
ON
NF
FI
ID
DE
EN
NT
TI
IA
AL
L
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 7
Copyright 2003
Rev. 0.3g, 2003-05-08
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
INTEGRATED PRODUCTS
PACKAGE DIMENSIONS
LQ 16-Pin MLPQ Plastic (3x3mm EP)
e
D
E
b
E2
D2
A
A3
A1
L
K
MILLIMETERS INCHES
Dim MIN MAX MIN MAX
A 0.80 1.00 0.031 0.039
A1 0 0.05 0 0.002
A3 0.18 0.30 0.007 0.012
b 0.18 0.30 0.007 0.012
D 3.00 BSC 0.118 BSC
E 3.00 BSC 0.118 BSC
e 0.5 BSC 0.020 BSC
D2 1.50 1.80 0.051 0.061
E2 1.50 1.80 0.051 0.061
K 0.2 - 0.008 -
L 0.35 0.45 0.012 0.020
Note:
1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not
include solder coverage.
M
ME
EC
CH
HA
AN
NI
IC
CA
AL
LS
S
LX5510
PRELIMINARY DATA SHEET
C
CO
ON
NF
FI
ID
DE
EN
NT
TI
IA
AL
L
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 8
Copyright 2003
Rev. 0.3g, 2003-05-08
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
INTEGRATED PRODUCTS
NOTES
PRODUCT PRELIMINARY DATA – Information contained in this document is pre-production data,
and is proprietary to Microsemi. It may not be modified in any way without the express written
consent of Microsemi. Product referred to herein is not guaranteed to achieve preliminary or
production status and product specifications, configurations, and availability may change at any time.
N
NO
OT
TE
ES
S
