Integrated
Circuit
Systems, Inc.
General Description Features
ICS91 12-31/32
Block Diagram
Frequency Generator for Fibre Channel Systems
Applications
ICS9112-31/32 Rev D 3/2/99
The ICS9112-31/32 are high-speed clock generators designed
to support fibre channel system requirements. The ICS9112-
31/32 generates 106.25 MHz from a 25 MHz crystal.
An exact frequency multiplying ratio ensures better than
±100 ppm frequency accuracy using a standard AT crystal
with external load capacitors (typically 33pF ±5% for an
18pF load crystal). Achieving ±100 ppm over four years
requires the crystal to have a ±20 ppm initial accuracy, ±30
ppm temperature and ±5 ppm/year aging coefficients.
The ICS9112-31/32 with less than 25ps accumulative jitter
is well suited for Fibre Channel applications.
• Generates 106.25 MHz clocks from a 25 MHz
crystal
• Less than 45ps one sigma jitter (15ps typ.)
• Less than ±130ps absolute jitter
• Less than 25ps accumulative jitter @ 256 cycles
• Rise/fall times less than 1.2ns driving 15pF
• On-chip loop filter components
• 3.0V-5.5V supply range
• 8-pin, 150-mil SOIC package
• Specifically designed to support the high-speed
clocking requirements of fibre channel systems.
PRODUCT PREVIEW documents contain information on new
products in the sampling or preproduction phase of development.
Characteristic data and other specifications are subject to change
without notice.
Preliminary Product Preview
2
ICS9112-31/32
Preliminary Product Preview
Pin Descriptions
Pin Configurations
8-Pin SOIC
Functionality
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100.5252.601
000.52etatsirT
8-Pin SOIC
NIP REBMUN EMANNIPEPYTNOITPIRCSED
1DNGARWP.dnuorggolanA
2DNGRWP.dnuorGlatigiD
31XNI .sroticapacdaollanretxeseriuqeR.zHM00.52yllanimon;ecivedottupnikcolcrolatsyrC
42XNI.sroticapacdaollanretxeseriuqeR.ecivedmorftuptuoevirdlatsyrC
5EONI )TUOF(tuptuokcolcehtsetatsirtti,wolsiEOnehw:).pu_lluplanretnisah(elbanEtuptuO
6DDVRWP)13-(ylppustlov0.5+ro3.3+
2KLCTUO)23-()zHm52.601(tuptuokcolC
7DDVARWP)13-(.)egatlovrewoplatigidlauqetsuM(.rewopgolanA
DDVA+DDVRWP)23-(ylppustloV0.5+ro3.3+,rewopgolanadnalatigiD
81KLCTUO)zHM52.601(tuptuokcolC
3
ICS9112-31/32
Preliminary Product Preview
Note 1: Parameter is guaranteed by design and characterization. Not 100% tested in production.
Electrical Characteristics at 5.0V
Operating VDD = +4.5V to +5.5V; TA =0°C to 70°C unless otherwise stated
Absolute Maximum Ratings
AVDD, VDD referenced to GND . . . . . . . . . . . . . . . 7V
Operating temperature under bias. . . . . . . . . . . . . . . . 0°C to +70°C
Storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Voltage on I/O pins referenced to GND. . . . . . . . . . . GND -0.5V to VDD +0.5V
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 Watts
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect product reliability.
scitsiretcarahCCD
RETEMARAPLOBMYSSNOITIDNOCTSETNIMPYTXAMSTINU
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LI
-- 8.0V
egatloVhgiHtupnIV
HI
0.2--V
tnerruCwoLtupnII
LI
V
NI
)tupnipu-lluP(V0=0.61-0.6--Aµ
tnerruChgiHtupnII
HI
V
NI
V=
DD
0.2--0.2Aµ
egatloVwoLtuptuO
1
V
LO
I
LO
Am01=-51.004.0V
egatloVhgiHtuptuO
1
V
HO
I
HO
Am03-=4.252.3-V
tnerruCwoLtuptuO
1
I
LO
V
LO
V8.0=0.220.53-Am
tnerruChgiHtuptuO
1
I
HO
V
HO
V0.2=-0.05-0.53-Am
tnerruCylppuSI
DD
dedaolnU-0.220.54Am
rotsiseRpu-lluP
1
R
up
-001- smhok
scitsiretcarahCCA
emiTesiR
1
T
1r
V0.2ot8.0,daolFp51-8.02.1sn
emiTllaF
1
T
1f
V8.0ot0.2,daolFp51-7.02.1sn
elcyCytuD
1
D
t
V4.1@daolFp510.240.940.55%
amgiSenO,rettiJ
1
T
s1j
daolFp51-0.510.54sp
etulosbA,rettiJ
1
T
baj
daolFp510.031-0.031sp
rettiJevitalumuccA
1
T
ccaj
elcyC652@daolFp51-0.71-sp
ycneuqerFtupnI
1
F
i
-0.52-zHM
ycneuqerFtuptuO
1
F
o
-52.601-zHM
emiTpu-rewoP
1
T
up
-85.70.81sm
ecnaticapaCtupnIlatsyrC
1
C
xni
)1niP(1X )8niP(2X -0.3-Fp
4
ICS9112-31/32
Preliminary Product Preview
Electrical Characteristics at 3.3V
Note 1: Parameter is guaranteed by design and characterization. Not 100% tested in production.
Operating VDD = +3.0V to +3.7V; TA =0°C to 70°C unless otherwise stated
scitsiretcarahCCD
RETEMARAPLOBMYSSNOITIDNOCTSETNIMPYTXAMSTINU
egatloVwoLtupnIV
LI --V02.0 DD V
egatloVhgiHtupnIV
HI V7.0 DD --V
tnerruCwoLtupnII
LI VNI )tupnipu-lluP(V0=0.7-5.2--Aµ
tnerruChgiHtupnII
HI VNI V= DD 0.2--0.2Aµ
egatloVwoLtuptuO 1VLO ILO Am6=-V50.0 DD V1.0 DD V
egatloVhgiHtuptuO 1VHO IHO Am5-=V58.0 DD V29.0 DD -V
tnerruCwoLtuptuO 1ILO VLO V2.0= DD 0.510.22-Am
tnerruChgiHtuptuO 1IHO VHO V7.0= DD -0.71-0.01-Am
tnerruCylppuSI
DD dedaolnU-0.410.03Am
rotsiseRpu-lluP 1Rup -0.571- smhok
scitsiretcarahCCA
emiTesiR 1T1r V0.2ot8.0,daolFp51-56.02.1sn
emiTllaF 1T1f V8.0ot0.2,daolFp51-6.02.1sn
elcyCytuD 1DtV4.1@daolFp510.040.050.06%
amgiSenO,rettiJ 1Ts1j daolFp51-0.510.54sp
etulosbA,rettiJ 1Tbaj daolFp510.031--0.031sp
rettiJevitalumuccA 1Tccaj elcyc652@daolFp51-0.71-sp
ycneuqerFtupnI 1Fi-0.52-zHM
ycneuqerFtuptuO 1Fo-52.601-zHM
emiTpu-rewoP 1Tup -85.70.81sm
ecnaticapaCtupnIlatsyrC 1Cxni )1niP(1X )8niP(2X -0.3-Fp
5
ICS9112-31/32
Preliminary Product Preview
8-Pin Plastic SOIC Package
ICS XXXX M-PPP
Example:
Package Type
M=SOIC, SOP
Device T ype (consists of 3 or 4 digit numbers)
ICS=Standard Device
Prefix
Ordering Information
ICS9112M-31/32
Pattern Number(2 or 3 digit number for parts with ROM code patterns)
PRODUCT PREVIEW documents contain information on new
products in the sampling or preproduction phase of development.
Characteristic data and other specifications are subject to change
without notice.
