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X04 Series
SENSITIVE 4A SCRS
September 2000 - Ed: 3
MAIN FEATURES:
DESCRIPTION
Thanks to highly sensitive triggering levels, the
X04 SCR series is suitable for all applications
where the available gate current is limited, such as
capacitive discharge ignitions, motor control in
kitchen aids, overvoltage crowbar protection in low
power supplies...
Symbol Value Unit
IT(RMS) 4A
V
DRM/VRRM 600 and 800 V
IGT 50 to 200 µA
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (180° conduction angle) Tl = 60°C 4 A
Tamb = 25°C 1.35
IT(AV) Average on-state current (180° conduction angle) Tl = 60°C 2.5 A
Tamb = 25°C 0.9
ITSM Non repetitive surge peak on-state
current tp = 8.3 ms Tj = 25°C 33 A
tp = 10 ms 30
I²tI
²
t Value for fusing tp = 10 ms Tj = 25°C 4.5 A2S
dI/dt Critical rate of rise of on-state current
IG=2xI
GT ,tr≤100ns F = 60 Hz Tj = 125°C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 1.2 A
PG(AV) Average gate power dissipation Tj = 125°C 0.2 W
Tstg
Tj Storage junction temperature range
Operating junction temperature range - 40to+150
-40to+125 °C
TO202-3
(X04xxF)
X04 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
THERMAL RESISTANCES
PRODUCT SELECTOR
Symbol Test Conditions X04xx Unit
02 05
IGT VD=12V R
L=140ΩMIN. _ 20 µA
MAX. 200 50
VGT MAX. 0.8 V
VGD VD=V
DRM RL=3.3kΩR
GK =1kΩTj = 125°C MIN. 0.1 V
VRG IRG =10µAMIN. 8V
I
H
I
T
=50mA R
GK =1kΩMAX. 5 mA
ILIG=1mA R
GK =1kΩMIN. 6 mA
dV/dt VD=67%V
DRM RGK =1kΩTj = 110°C MIN. 10 15 V/µs
VTM ITM =8A tp=380µs Tj = 25°C MAX. 1.8 V
Vt0 Threshold voltage Tj = 125°C MAX. 0.95 V
RdDynamic resistance Tj = 125°C MAX. 100 mΩ
IDRM
IRRM VDRM =V
RRM RGK =1kΩTj = 25°C MAX. 5 µA
Tj = 125°C 1 mA
Symbol Parameter Value Unit
Rth(j-l) Junction to leads (DC) 15 °C/W
Rth(j-a) Junction to ambient (DC) 100
Part Number Voltage Sensitivity Package
600 V 800 V
X0402MF X 200 µA TO202-3
X0402NF X 200 µA TO202-3
X0405MF X 50 µA TO202-3
X0405NF X 50 µA TO202-3
X04 Series
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ORDERING INFORMATION
OTHER INFORMATION
Note: xx = sensitivity, y = voltage
Part Number Marking Weight Base Quantity Packing mode
X04xxyF 1AA2 X04xxyF 0.8 g 250 Bulk
X04xxyF 0AA2 X04xxyF 0.8 g 50 Tube
Fig. 1: Maximum average power dissipation
versus average on-state current. Fig. 2-1: Average and D.C. on-state current
versus lead temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
X04 Series
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Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values). Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical
values).
Fig. 8: Surge peak on-state current versus
number of cycles. Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
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Fig. 10: On-state characteristics (maximum
values).
PACKAGE MECHANICAL DATA
TO202-3 (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 10.1 0.398
C 7.3 0.287
D10.5 0.413
F1.50.059
H0.51 0.020
J 1.5 0.059
M 4.5 0.177
N5.30.209
N1 2.54 0.100
O1.40.055
P0.70.028
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ofuseof such informationnorfor any infringement ofpatents or otherrightsof third parties which mayresultfromitsuse.No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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