APTGT75X120RTP3G
APTGT75X120BTP3G
APTGT75X120BTP3G – Rev 1 July, 2006
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All ratings @ Tj = 25°C unless otherwise specified
1. Absolute maximum ratings
Diode rectifier Absolute maximum ratings
Symbol Parameter Max ratings Unit
VRRM Repetitive Peak Reverse Voltage 1600 V
IF DC Forward Current TC = 80°C 80
Tj = 25°C 500
IFSM Surge Forward Current tp = 10ms Tj = 150°C 400
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
CR12
23
CR10
21
1
2
3
CR11 CR13 CR15
CR14
9
R
6
Q5
5
16
15
8
10
Q6
4
18
17
11
19
Q2
13 12
Q1
20
14
24
7
CR7
Q4
Q3
22
Q7
APTGT75X120RTP3G: Without Brake (Pin 7 & 14 not connected)
9
8
7
45 6
22
23
24
123
17181920 10111214 1316 1521
VCES = 1200V
IC = 75A @ Tc = 80°C
Applicatio
n
• AC Motor control
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching freque nc y up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Low conduction losses
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Input rectifier bridge + Brake + 3 Phase Bridge
Trench + Field Stop IGBT®
Power Module
APTGT75X120RTP3G
APTGT75X120BTP3G
APTGT75X120BTP3G – Rev 1 July, 2006
www.microsemi.com 2 - 6
IGBT & Diode Brake (only for APTGT75X120BTP3G) Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 55
IC Continuous Collector Current TC = 80°C 35
ICM Pulsed Collector Current TC = 25°C 70
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 200 W
IF DC Forward Current TC = 80°C 25 A
IGBT & Diode Inverter Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 105
IC Continuous Collector Current TC = 80°C 75
ICM Pulsed Collector Current TC = 25°C 150
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 350 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 150A @ 1100V
IF DC Forward Current TC = 80°C 75
IFRM Repetitive Peak Forward Current tp = 1ms 150 A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IR Reverse Current VR = 1600V Tj = 150°C 3 mA
VF Forward Voltage IF = 75A Tj = 150°C 1.1 V
RthJC Junction to Case Thermal Resistance 0.65 °C/W
IGBT Brake & Diode (only for APTGT75X120BTP3G) Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 250 µA
Tj = 25°C 1.4 1.7 2.1
VCE(sat) Collector Emitter on Voltage VGE = 15V
IC = 35A Tj = 125°C 2.0 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 2mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 600 nA
Cies Input Capacitance 2500
Coes Output Capacitance 132
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 115
pF
Tj = 25°C 1.6
VF Forward Voltage VGE = 0V
IF = 25A Tj = 125°C 1.6 V
IGBT 0.6
RthJC Junction to Case Thermal Resistance
Diode 1.2
°C/W
APTGT75X120RTP3G
APTGT75X120BTP3G
APTGT75X120BTP3G – Rev 1 July, 2006
www.microsemi.com 3 - 6
IGBT & Diode Inverter Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 250 µA
Tj = 25°C 1.7 2.1
VCE(sat) Collector Emitter on Voltage VGE =15V
IC = 75A Tj = 125°C 2.0 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 3 mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 500 nA
Cies Input Capacitance 5345
Coss Output Capacitance 280
Crss Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 242
pF
Td(on) Turn-on Delay Time 260
Tr Rise Time 30
Td(off) Turn-off Delay Time 420
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7Ω 65
ns
Td(on) Turn-on Delay Time 285
Tr Rise Time 45
Td(off) Turn-off Delay Time 520
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7Ω 90
ns
Eon Turn on Energy Tj = 125°C 9.4
Eoff Turn off Energy
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7Ω Tj = 125°C 9.4
mJ
Tj = 25°C 1.6 2.2
VF Forward Voltage VGE = 0V
IF = 75A Tj = 125°C 1.6 V
Tj = 25°C 8
Qrr Reverse Recovery Charge Tj = 125°C 14 µC
Tj = 25°C 3
Er Reverse Recovery Energy
IF = 75A
VR = 600V
di/dt=2000A/µs
Tj = 125°C 5.5 mJ
IGBT 0.35
RthJC Junction to Case Thermal Resistance
Diode 0.58
°C/W
Temperature sensor NTC
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 5
kΩ
B 25/50 T
25 = 298.16 K 3375 K
−
=
TT
B
R
RT
11
exp
25
50/25
25
3. Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 125
°C
Torque Mounting torque To Heatsink M5 2.5 4.7
N.m
Wt Package Weight 300
g
T: Thermistor temperature
RT: Thermistor value at T
APTGT75X120RTP3G
APTGT75X120BTP3G
APTGT75X120BTP3G – Rev 1 July, 2006
www.microsemi.com 4 - 6
4. P3 Package outline (dimensions in mm)
PIN 24
PIN 1
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APTGT75X120RTP3G
APTGT75X120BTP3G
APTGT75X120BTP3G – Rev 1 July, 2006
www.microsemi.com 5 - 6
Inverte r Ty pical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
01234
VCE (V)
IC (A)
Outpu t Characteristics
VGE=15V
VGE=13V
VGE=17V
VGE=9V
0
25
50
75
100
125
150
01234
VCE (V)
IC (A)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=125°C
0
25
50
75
100
125
150
56789101112
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eoff
Eoff
Er
0
5
10
15
20
25
0 25 50 75 100 125 150
IC (A)
E (mJ)
VCE = 600V
VGE = 15V
RG = 4.7Ω
TJ = 125°C
Eon
Eoff
Er
0
4
8
12
16
20
24
0 5 10 15 20 25 30 35 40 45
Gate Resistance (ohms)
E (mJ)
VCE = 60 0V
VGE =15V
IC = 75A
TJ = 125°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
25
50
75
100
125
150
175
0 400 800 1200 1600
VCE (V)
IC (A)
VGE=15V
TJ=125°C
RG=4.7Ω
maximum Effective Transien t Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
APTGT75X120RTP3G
APTGT75X120BTP3G
APTGT75X120BTP3G – Rev 1 July, 2006
www.microsemi.com 6 - 6
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=125°C
0
25
50
75
100
125
150
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
IF (A)
hard
switching
0
5
10
15
20
25
30
0 20406080100120
IC (A)
Fmax, Operating Frequency (kHz)
VCE=600V
D=50%
RG=4.7Ω
TJ=125°C
TC=75 °C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
Brake Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25 °C
TJ=125°C
0
25
50
75
100
01234
VCE (V)
IC (A)
Forward Characteristic of diode
TJ=25 °C
TJ=125°C
TJ=125°C
0
12.5
25
37.5
50
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
IF (A)
Rectifier Typical Performance Curve
T
J
=25°C
T
J
=150°C
0
25
50
75
100
125
150
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
F
(V)
I
F
(A)
Forward Characteristic of Rectifier diode
M icros emi re se rve s the rig ht to c ha nge , witho ut notice , t he specificatio ns and info rmatio n co nta ine d he rein
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