Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
1.1 dB NF, 14.5 dB GA
• Characterized for End-of-
Life Battery Use (2.7 V)
• SOT-363 (SC-70) Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
AT-32063
Description
The AT-32063 contains two high
performance NPN bipolar transis-
tors in a single SOT-363 package.
The devices are unconnected,
allowing flexibility in design. The
pin-out is convenient for cascode
amplifier designs. The SOT-363
package is an industry standard
plastic surface mount package.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of the transistor yields extremely
high performance products that
can perform a multiplicity of
tasks. The 20 emitter finger
interdigitated geometry yields a
transistor that is easy to match to
and extremely fast, with moderate
power, low noise resistance, and
low operating currents.
Optimized performance at 2.7 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
B
1
1
E
1
2
C
2
3
C
1
6
E
2
5
B
2
4
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 5 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes this device a
good fit for 900 MHz pager appli-
cations. Voltage breakdowns are
high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Agilent’s 10 GHz ft , 30
GHz fmax Self-Aligned-Transistor
(SAT) process. The die are nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metallization
in the fabrication of these devices.
I I
2
AT-32063 Absolute Maximum Ratings[1]
Absolute
Symbol Parameter Units Maximum
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 11
VCEO Collector-Emitter Voltage V 5.5
ICCollector Current mA 32
PTPower Dissipation[2,3] mW 150
TjJunction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal Resistance[2]:
θjc = 370°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface = 25°C.
3.
Derate at 2.7 mW/°C for T
C
> 94.5°C.
4. 150 mW per device.
Electrical Specifications, TA = 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF Noise Figure; VCE = 2.7 V, IC = 5 mA f = 0.9 GHz dB 1.1[2] 1.4[2]
GAAssociated Gain; VCE = 2.7 V, IC = 5 mA f = 0.9 GHz dB 12.5[2] 14.5[2]
hFE Forward Current Transfer Ratio; VCE = 2.7 V, IC = 5 mA — 50 270
ICBO Collector Cutoff Current; VCB = 3 V µA 0.2
IEBO Noise Figure; VEB = 1 V µA 1.5
Notes:
1. All data is per individual transistor.
2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.2 dB;
output loss = 0.3 dB.
W = 20
L = 60
W = 10
L = 450 W = 10
L = 100
TEST CIRCUIT
BOARD MATERIAL = 0.047 GETEK (ε = 4.3)
DIMENSIONS IN MILS
NOT TO SCALE
50 Ω50 Ω
Figure 1. Test circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain,
stability, and a practical synthesizable match.
3
AT-32063 Characterization Information, TA = 25°C
Symbol Parameters and Test Conditions Units Typ.
P1 dB Power at 1 dB Gain Compression (opt tuning); VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 12
G1 dB Gain at 1 dB Gain Compression (opt tuning); VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dB 16
IP3Output Third Order Intercept Point (opt tuning); VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 24
Typical Performance, TA = 25°C
0
0.50
1.00
2.00
1.50
0.9 1.8 2.4
NOISE FIGURE
(dB)
FREQUENCY (GHz)
Figure 2. Minimum Noise Figure vs.
Frequency and Current at V
CE
= 2.7 V.
2.7V/2 mA
2.7V/5 mA
2.7V/20 mA 0
5.0
10.0
20.0
15.0
0.9 1.8 2.4
Ga
(dB)
FREQUENCY (GHz)
Figure 3. Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
2.7V/2 mA
2.7V/5 mA
2.7V/20 mA 10
11
12
15
13
14
0.9 1.8 2.4
P1 dB
(dBm)
FREQUENCY (GHz)
Figure 4. Power at 1 dB Gain
Compression vs. Frequency at
V
CE
= 2.7 V and I
C
= 20 mA.
0
5
10
15
25
20
0 0.5 1.0 1.5 2.0 2.5
IP
3
(dBm)
FREQUENCY (GHz)
Figure 6. Third Order Intercept vs.
Frequency and Bias at V
CE
= 2.7 V, with
Optimal Tuning.
2 mA
5 mA
10 mA
20 mA
0
3
6
18
15
9
12
0.9 1.8 2.4
G1 dB
(dBm)
FREQUENCY (GHz)
Figure 5. 1 dB Compressed Gain vs.
Frequency at V
CE
= 2.7 V and
I
C
=20mA.
4
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 1 V, IC = 1 mA
Freq. Fmin GAGopt Rn
GHz dB dB Mag. Ang. —
0.9 0.71 10.4 0.76 50 0.44
1.8 1.37 8.3 0.60 112 0.24
2.4 1.80 7.2 0.50 155 0.10
-5
0S21
5
10
15
25
20
0.1 1.1 2.1 3.1 4.1 5.1
GAIN
(dB)
FREQUENCY (GHz)
Figure 7. Gain vs. Frequency at
VCE = 1 V, IC = 1 mA.
MSG
MSG
MAG
0
5S21
10
15
20
30
25
0.1 1.1 2.1 3.1 4.1 5.1
GAIN
(dB)
FREQUENCY (GHz)
Figure 8. Gain vs. Frequency at
V
CE
= 2.7 V, I
C
= 2 mA.
MSG
MSG
MAG
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.96 -12 16.46 6.66 169 -37.32 0.014 82 0.98 -5
0.5 0.77 -55 14.73 5.45 132 -25.13 0.055 59 0.87 -21
0.9 0.59 -87 12.37 4.15 107 -22.42 0.076 48 0.76 -29
1.0 0.55 -93 11.74 3.86 103 -22.07 0.079 47 0.74 -30
1.5 0.42 -121 9.26 2.90 83 -20.79 0.091 44 0.69 -36
1.8 0.37 -135 8.01 2.52 73 -20.13 0.099 45 0.67 -39
2.0 0.34 -145 7.35 2.33 67 -19.67 0.104 46 0.66 -41
2.4 0.29 -164 6.05 2.01 56 -18.68 0.116 48 0.65 -46
3.0 0.26 167 4.54 1.69 41 -16.95 0.142 50 0.64 -53
4.0 0.28 124 2.73 1.37 20 -13.75 0.205 48 0.61 -68
5.0 0.33 94 1.36 1.17 1 -10.70 0.292 41 0.57 -89
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq. Fmin GAGopt Rn
GHz dB dB Mag. Ang. —
0.9 0.78 14.3 0.65 50 0.31
1.8 1.25 10.7 0.45 105 0.20
2.4 1.57 9.1 0.35 145 0.13
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 1 V, IC = 1 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.98 -11 11.36 3.7 171 -34.77 0.02 83 0.99 -4
0.5 0.86 -50 10.14 3.21 138 -22.02 0.08 59 0.91 -20
0.9 0.72 -82 8.39 2.63 113 -18.97 0.11 43 0.82 -31
1.0 0.69 -88 7.87 2.48 108 -18.61 0.12 41 0.8 -32
1.5 0.58 -119 5.87 1.97 85 -17.8 0.13 31 0.73 -41
1.8 0.52 -134 4.83 1.74 74 -17.72 0.13 28 0.7 -45
2.0 0.49 -145 4.3 1.64 67 -17.69 0.13 28 0.68 -48
2.4 0.45 -165 3.16 1.44 55 -17.68 0.13 30 0.67 -54
3.0 0.41 166 1.84 1.24 39 -16.99 0.14 37 0.64 -63
4.0 0.42 124 0.17 1.02 16 -13.67 0.21 45 0.6 -81
5.0 0.47 93 -1.15 0.88 -2 -9.84 0.32 38 0.54 -107
5
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 5 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.87 -19 23.36 14.72 162 -37.77 0.013 80 0.96 -9
0.5 0.52 -72 19.21 9.13 116 -27.03 0.045 60 0.72 -25
0.9 0.34 -101 15.40 5.89 94 -24.01 0.063 58 0.62 -28
1.0 0.31 -106 14.60 5.37 90 -23.41 0.067 58 0.61 -29
1.5 0.22 -129 11.54 3.77 74 -20.85 0.091 58 0.58 -33
1.8 0.19 -141 10.12 3.21 66 -19.52 0.106 58 0.57 -36
2.0 0.17 -150 9.33 2.93 61 -18.72 0.116 57 0.57 -38
2.4 0.14 -169 7.95 2.50 52 -17.22 0.138 56 0.57 -42
3.0 0.12 160 6.34 2.08 39 -15.25 0.173 52 0.56 -49
4.0 0.16 117 4.46 1.67 20 -12.40 0.240 44 0.53 -63
5.0 0.22 93 3.15 1.44 2 -10.03 0.315 33 0.48 -82
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 5 mA
Freq. Fmin GAGopt Rn
GHz dB dB Mag. Ang. —
0.9 0.98 16.4 0.45 51 0.23
1.8 1.50 11.6 0.29 100 0.16
2.4 1.77 10.1 0.33 153 0.11
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 20 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.55 -41 30.48 33.40 143 -39.81 0.010 74 0.83 -15
0.5 0.20 -107 21.24 11.53 97 -29.18 0.035 72 0.56 -20
0.9 0.13 -137 16.48 6.66 82 -24.63 0.059 72 0.53 -22
1.0 0.13 -141 15.60 6.02 79 -23.79 0.065 71 0.53 -22
1.5 0.10 -164 12.26 4.10 67 -20.43 0.095 68 0.52 -27
1.8 0.09 -178 10.78 3.46 60 -18.88 0.114 66 0.53 -31
2.0 0.09 172 9.93 3.14 56 -17.98 0.126 64 0.53 -34
2.4 0.08 152 8.52 2.67 48 -16.39 0.151 60 0.53 -39
3.0 0.10 127 6.85 2.20 36 -14.4 0.191 54 0.52 -47
4.0 0.15 101 4.92 1.76 18 -11.68 0.261 43 0.48 -61
5.0 0.21 86 3.59 1.51 0 -9.52 0.334 31 0.44 -79
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 20 mA
Freq. Fmin GAGopt Rn
GHz dB dB Mag. Ang. —
0.9 1.51 17.9 0.13 88 0.20
1.8 1.78 12.7 0.20 178 0.13
2.4 1.96 10.6 0.28 235 0.08
0
5S21
10
15
20
25
30
35
0.1 1.1 2.1 3.1 4.1 5.1
GAIN
(dB)
FREQUENCY (GHz)
Figure 9. Gain vs. Frequency at
V
CE
= 2.7 V, I
C
= 5 mA.
MSG
MSG
MAG
0
5S21
10
15
20
40
25
30
35
0.1 1.1 2.1 3.1 4.1 5.1
GAIN
(dB)
FREQUENCY (GHz)
Figure 10. Gain vs. Frequency at
VCE = 2.7 V, IC = 20 mA.
MSG
MSG
MAG
6
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 2 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.96 -12 16.50 6.69 169 -38.44 0.012 82 0.98 -5
0.5 0.78 -53 14.84 5.52 133 -26.20 0.049 60 0.88 -19
0.9 0.59 -84 12.5 4.23 108 -23.4 0.068 50 0.79 -27
1.0 0.56 -90 11.92 3.94 104 -23.04 0.070 49 0.77 -28
1.5 0.42 -117 9.46 2.97 84 -21.71 0.082 46 0.72 -33
1.8 0.36 -131 8.21 2.57 74 -21.04 0.089 47 0.70 -36
2.0 0.33 -140 7.55 2.38 68 -20.56 0.094 48 0.69 -39
2.4 0.28 -159 6.24 2.05 57 -19.54 0.105 50 0.69 -43
3.0 0.24 171 4.72 1.72 43 -17.76 0.129 53 0.68 -50
4.0 0.25 126 2.88 1.39 21 -14.47 0.189 52 0.66 -64
5.0 0.31 95 1.49 1.19 3 -11.32 0.272 45 0.63 -83
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 2 mA
Freq. Fmin GAGopt Rn
GHz dB dB Mag. Ang. —
0.9 0.75 13.7 0.74 47 0.37
1.8 1.26 10.8 0.55 101 0.22
2.4 1.60 9.6 0.45 139 0.13
0
5S21
10
15
20
30
25
0.1 1.1 2.1 3.1 4.1 5.1
GAIN (dB)
FREQUENCY (GHz)
Figure 11. Gain vs. Frequency at
VCE = 5 V, IC = 2 mA.
MSG
MSG
MAG
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 20 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.61 -36 30.56 33.74 145 -40.46 0.01 75 0.86 -14
0.5 0.22 -91 21.75 12.23 98 -29.90 0.03 72 0.6 -19
0.9 0.13 -115 17.02 7.10 83 -25.40 0.05 72 0.57 -21
1.0 0.12 -118 16.14 6.41 81 -24.56 0.06 71 0.57 -21
1.5 0.08 -137 12.80 4.36 68 -21.23 0.09 69 0.57 -26
1.8 0.06 -148 11.31 3.68 62 -19.69 0.10 66 0.57 -30
2.0 0.06 -159 10.46 3.33 58 -18.79 0.12 65 0.57 -32
2.4 0.04 175 9.02 2.83 50 -17.21 0.14 61 0.57 -37
3.0 0.05 131 7.35 2.33 39 -15.22 0.17 56 0.56 -45
4.0 0.10 99 5.39 1.86 21 -12.48 0.24 46 0.54 -58
5.0 0.16 86 4.05 1.6 3 -10.27 0.31 34 0.50 -75
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 20 mA
Freq. Fmin GAGopt Rn
GHz dB dB Mag. Ang. —
0.9 1.50 18.6 0.18 74 0.20
1.8 1.78 13.3 0.19 147 0.16
2.4 1.96 11.3 0.24 198 0.14
0
5S21
10
15
20
40
25
30
35
0.1 1.1 2.1 3.1 4.1 5.1
GAIN
(dB)
FREQUENCY (GHz)
Figure 12. Gain vs. Frequency at
V
CE
= 5 V, I
C
= 20 mA.
MSG
MSG
MAG
7
Package Dimensions
Outline 63 (SOT-363/SC-70)
2.20 (0.087)
2.00 (0.079) 1.35 (0.053)
1.15 (0.045)
1.30 (0.051)
REF.
0.650 BSC (0.025)
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.25 (0.010)
0.15 (0.006)
1.00 (0.039)
0.80 (0.031) 0.20 (0.008)
0.10 (0.004)
0.30 (0.012)
0.10 (0.004)
0.30 REF.
10°
0.425 (0.017)
TYP.
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Part Number Ordering Information
Part Number No. of Devices Container
AT-32063-TR1 3000 7" Reel
AT-32063-BLK 100 antistatic bag
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
Obsoletes 5965-1234E
5965-8921E (11/99)
Device Orientation
Tape Dimensions
For Outline 63
USER
FEED
DIRECTION COVER TAPE
CARRIER
TAPE
REEL END VIEW
8 mm
4 mm
TOP VIEW
II II II II
P
P
0
P
2
FW
D
1
D
E
A
0
8° MAX.
t
1
(CARRIER TAPE THICKNESS)
5° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS W
t
1
8.00 ± 0.30
0.255 ± 0.013 0.315 ± 0.012
0.010 ± 0.0005
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
