1
TO-220F
Item Symbol Ratings Unit
Drain-source voltage V DS 900
VDSX *5 900
Continuous drain current ID±9
Pulsed drain current ID(puls] ±36
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 9
Maximum Avalanche Energy EAS *1 287.7
Maximum Drain-Source dV/dt dVDS/dt *4 40
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25°C 2.16
Tc=25°C 95
Operating and storage Tch +150
temperature range Tstg
Isolation Voltage VISO *6 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3679-01MR
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=900V VGS=0V
VDS=720V VGS=0V
VGS=±30V
ID=4.5A VGS=10V
ID=4.5A VDS=25V
VCC=600V ID=4.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 1.316
58.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=450V
ID=9A
VGS=10V
L=6.51mH Tch=25°C
IF=9A VGS=0V Tch=25°C
IF=9A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
900
3.0 5.0
25
250
100
1.22 1.58
510
1100 1650
140 210
812
25 38
12 18
50 75
12 18
31 46.5
4.5 8
11 16.5
90.90 1.50
3.2
15.5
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Super F AP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<=
<
Gate(G)
Source(S)
Drain(D)
200304
*4 VDS 900V *5 VGS=-30V *6 t=60sec, f=60Hz
<
=
*1 L=6.51mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch 150°C
=
<
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2
Characteristics
2SK3679-01MR FUJI POWER MOSFET
0 5 10 15 20
0
2
4
6
8
10
12
14
20V
7.0V
10V
8.0V
6.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
VGS=5.5V
012345678910
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
0.1 1 10
1
10
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS =25V,Tch=25°C
02468101214
1.1
1.2
1.3
1.4
1.5
1.6
1.7
7.0V
6.5V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f (ID):80 µs pulse test,Tch=25°C
10V
20V
8.0V
6.0V
VGS=5.5V
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
RDS(o n) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Res istance
RDS(on)=f(Tch):ID=4.5A,VGS=10V
0 255075100125150
0
25
50
75
100
125
150
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
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3
2SK3679-01MR FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS(th) [V]
Tch [°C] 0 5 10 15 20 25 30 35 40 45
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Charact e ri st i c s
VGS=f(Qg):ID=9A,Tch=25°C
VGS [V]
720V
450V
Vcc= 180V
100101102
10-3
10-2
10-1
100
101
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
10-1 100101
100
101
102
103
Typical Switching Characteris t ic s vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10 Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700 IAS=4A
IAS=9A
IAS=6A
EAS [mJ]
starting Tch [ °C]
Maximum Avalanche Energy vs. s tar ti ng Tch
E(AS)=f( s tarting Tch):Vc c=90V
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4
2SK3679-01MR FUJI POWER MOSFET
http://www.fujielectric.co.jp/denshi/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Singl e Pu ls e
M ax i mum Avalanche Current Pulsewidth
IAV=f(tAV):s tarting Tch=2 5°C,Vcc=90V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maxim um T ransient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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