LTC3265
12
3265fa
For more information www.linear.com/LTC3265
(Refer to the Block Diagram)
OPERATION
and goes into a low current state. This state is referred to
as the sleep state in which the IC consumes only about
25µA from the VIN_N pin. When the VOUT– output voltage
droops enough to overcome the burst comparator hys-
teresis, the part wakes up and commences charge pump
cycles until the output voltage exceeds –0.94 • VIN (typ).
This mode provides lower operating current at the cost of
higher output ripple and is ideal for light load operation.
Charge Pump Frequency Programming
The charge transfer frequency can be adjusted between
50kHz and 500kHz using an external resistor on the RT
pin. At slower frequencies the effective open-loop output
resistance (ROL) of the charge pumps are larger and they
provide smaller average output current. Figure 1 can be
used to determine a suitable value of RT to achieve a re-
quired oscillator frequency. If the RT pin is grounded, the
part operates at a constant frequency of 500kHz.
The charge pumps have lower ROL at higher frequencies.
For Burst Mode operation it is recommended that the RT
pin be tied to GND. This minimizes the charge pump ROL,
quickly charges the output up to the burst threshold and
optimizes the duration of the low current sleep state.
Charge Pump Soft-Start
The LTC3265 has built in soft-start circuitry to prevent
excessive current flow during start-up. The soft-start is
achieved by internal circuitry that slowly ramps the amount
of current available at the output storage capacitors on the
VOUT+ and VOUT– pins. The soft-start circuitry is reset in the
event of a commanded shutdown or thermal shutdown.
Charge Pump Short-Circuit/Thermal Protection
The LTC3265 charge pumps have built-in short-circuit
current limit as well as overtemperature protection.
During a short-circuit condition, the part automatically
limits its output currents from the VOUT+ and VOUT– pins to
220mA and 160mA respectively. If the junction tempera-
ture exceeds approximately 175°C the thermal shutdown
circuitry disables current delivery to the outputs. Once
the junction temperature drops back to approximately
165°C current delivery to the outputs is resumed. When
thermal protection is active the junction temperature is
beyond the specified operating range. Thermal protection
is intended for momentary overload conditions outside
normal operation. Continuous operation above the speci-
fied maximum operating junction temperature may impair
device reliability.
Positive Low Dropout Linear Regulator (LDO+)
The positive low dropout regulator (LDO+) supports a load
of up to 50mA. The LDO+ takes power from the VOUT+ pin
(output of the boost charge pump) and drives the LDO+
output pin to a voltage programmed by the resistor divider
connected between LDO+, ADJ+ and GND pins. For stabil-
ity, the LDO+ output must be bypassed to ground with a
low ESR ceramic capacitor that maintains a capacitance
of at least 2µF across operating temperature and voltage.
The boost charge pump and LDO+ are enabled or disabled
via the EN+ logic input pin. Internal circuitry delays enabling
the LDO+ output until reasonable voltage has developed on
the charge storage capacitor on the VOUT+ pin. When the
LDO+ is enabled, a soft-start circuit ramps its regulation
point from zero to the final value over a period of 75µs,
reducing the inrush current on VOUT+ pin.
Figure 2 shows the LDO+ regulator application circuit.
The LDO+ output voltage VLDO+ can be programmed by
choosing suitable values of R1 and R2 such that:
VLDO+=1.2V •
R2 +1
An optional capacitor of 100nF can be connected from the
BYP+ pin to ground. This capacitor bypasses the internal
1.2V reference of the LTC3265 and improves the noise
performance of the LDO+. If this function is not used the
BYP+ pin should be left floating.
An optional feedback capacitor (COPT) can be added for
improved transient response. A value of 10pF is recom-
mended for most applications but experimentation with
capacitor sizes between 2pF and 22pF may yield further
improvement in the transient response.