IRK.135, .136, .141, .142, .161, .162 Series
3
Bulletin I27101 rev. A 09/97
www.irf.com
IRRM Maximum peak reverse and 50 mA TJ = 150oC
IDRM off-state leakage current
VINS RMS isolation voltage 3000 V 50Hz, circuit to base, all terminals shorted,
t = 1s
dv/dt critical rate of rise of off-state 1000 V/µs TJ = TJ max., exponential to 67% rated VDRM
voltage
IRK.135. IRK.141. IRK.161.
IRK.136. IRK.142. IRK.162.
td Typical delay time 2.0 1.0 1.0 µs TJ = 25oC Gate Current = 1A dIg/dt= 1A/µs
tr Typical rise time 3.0 2.0 2.0 µs TJ = 25oC Vd = 0,67% VDRM
tq Typical turn-off time 50 - 150 µs ITM = 300 A; -dI/dt = 15 A/µs; TJ = TJ max
Vr = 50 V; dV/dt = 20 V/µs; Gate 0 V, 100Ω
IRK.135. IRK.141. IRK.161.
IRK.136. IRK.142. IRK.162.
Blocking
Thermal and Mechanical Specifications
TJ Max. junction operating -40 to 130 -40 to 150 °C
temperature range
Tstg Max. storage temperature -40 to 150 °C
range
RthJC Max. thermal resistance, 0.20 0.17 0.17 K/W DC operation, per junction
junction to case
RthCS Max. thermal resistance, 0.035 K/W Mounting surface smooth, flat and greased
case to heatsink Per module
T Mounting IAP to heatsink 4 to 6 Nm
torque ± 10% busbar to IAP 4 to 6
wt Approximate weight 500 (17.8) g (oz)
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricated threads.
IRK.135. IRK.141. IRK.161.
IRK.136. IRK.142. IRK.162.
Parameter Units Conditions
Parameter Units Conditions
Switching
Triggering
PGM Max. peak gate power 5 10 10 W tp ≤ 5ms, TJ = TJ max.
PG(AV) Max. average gate power 1 2 2 W f=50Hz, TJ = T J max.
IGM Max. peak gate current 2 3 3 A tp ≤ 5ms, TJ = TJ max.
-VGT Max. peak negative 5 5 5 V
gate voltage
VGT Max. required DC gate 4.0 4.0 4.0 V TJ = - 40°C Anode supply = 12V, resistive
voltage to trigger 3.0 3.0 3.0 TJ = 25°C load; Ra = 1Ω
2.0 2.0 2.0 TJ = TJ
max.
IGT Max. required DC gate 350 350 350 TJ = - 40°C Anode supply = 12V, resistive
current to trigger 200 200 200 mA TJ = 25°C load; Ra = 1Ω
100 100 100 TJ = TJ
max.
VGD Max. gate voltage 0.25 0.30 0.30 V @ TJ = TJ max., rated VDRM
applied
that will not trigger
IGD Max. gate current 10 10 10 mA
that will not trigger
di/dt Max. rate of rise of 300 500 500 A/µs @ TJ = TJ max., ITM
= 400A rated V DRM
applied
turned-on current
Parameter Units Conditions
IRK.135. IRK.141. IRK.161.
IRK.136. IRK.142. IRK.162.
Parameter Units Conditions
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