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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 46
HMC356LP3 / 356LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
v03.0610
General Description
Features
Functional Diagram
The HMC356LP3 & HMC356LP3E are high dynamic
range GaAs PHEMT MMIC Low Noise Ampli ers
is ideal for GSM & CDMA cellular basestation and
Mobile Radio front-end receivers operating between
350 and 550 MHz. This LNA has been optimized to
provide 1.0 dB noise gure, 17 dB gain and +38 dBm
output IP3 from a single supply of +5V @ 104 mA.
Input and output return losses are 15 dB typical, with
the LNA requiring only four external components to
optimize the RF input match, RF ground and DC bias.
For applications which require improved noise gure,
please see the HMC616LP3(E).
Noise Figure: ≤1.0 dB
+38 dBm Output IP3
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5V @ 104 mA
50 Ohm Matched Output
Electrical Speci cations, TA = +25° C, Vs = +5V
Typical Applications
The HMC356LP3 / HMC356LP3E is ideal for
basestation receivers:
• GSM 450 & GSM 480
• CDMA 450
• Private Land Mobile Radio
Parameter Min. Typ. Max. Units
Frequency Range 350 - 550 MHz
Gain 15 17 dB
Gain Variation Over Temperature 0.0032 0.010 dB / °C
Noise Figure 1.0 1.4 dB
Input Return Loss 17 dB
Output Return Loss 12 dB
Reverse Isolation 24 dB
Output Power for 1dB Compression (P1dB) 17 21 dBm
Saturated Output Power (Psat) 22.5 dBm
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing) 34 38 dBm
Supply Current (Idd) 104 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 47
Broadband Gain & Return Loss
Gain vs. Temperature
Noise Figure vs. Temperature
Reverse Isolation
Gain vs. Vdd
Noise Figure vs. Vdd
-25
-20
-15
-10
-5
0
5
10
15
20
25
0.25 0.5 0.75 1 1.25 1.5 1.75 2
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
10
11
12
13
14
15
16
17
18
19
20
0.3 0.35 0.4 0.45 0.5 0.55 0.6
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
10
11
12
13
14
15
16
17
18
19
20
0.3 0.35 0.4 0.45 0.5 0.55 0.6
+5.0 V
+4.5 V
+5.5 V
GAIN (dB)
FREQUENCY (GHz)
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
0.3 0.35 0.4 0.45 0.5 0.55 0.6
+4.5 V
+5.0 V
+5.5 V
NOISE FIGURE (dB)
FREQUENCY (GHz)
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
0.3 0.35 0.4 0.45 0.5 0.55 0.6
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0.3 0.35 0.4 0.45 0.5 0.55 0.6
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
HMC356LP3 / 356LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
v03.0610
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 48
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
P1dB & Psat vs. TemperatureOutput IP3 vs. Temperature
Output IP3 vs. Vdd P1dB vs. Vdd
-25
-20
-15
-10
-5
0
0.3 0.35 0.4 0.45 0.5 0.55 0.6
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0.3 0.35 0.4 0.45 0.5 0.55 0.6
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
32
33
34
35
36
37
38
39
40
41
42
0.3 0.35 0.4 0.45 0.5 0.55 0.6
+25 C
+85 C
-40 C
OUTPUT IP3 (dBm)
FREQUENCY (GHz)
16
17
18
19
20
21
22
23
24
25
26
0.3 0.35 0.4 0.45 0.5 0.55 0.6
+25 C
+85 C
-40 C
COMPRESSION (dBm)
FREQUENCY (GHz)
P1dB
PSAT
32
33
34
35
36
37
38
39
40
41
42
0.3 0.35 0.4 0.45 0.5 0.55 0.6
+4.5 V
+5.0 V
+5.5 V
OUTPUT IP3 (dBm)
FREQUENCY (GHz)
16
17
18
19
20
21
22
23
24
25
26
0.3 0.35 0.4 0.45 0.5 0.55 0.6
+4.5 V
+5.0 V
+5.5 V
COMPRESSION (dBm)
FREQUENCY (GHz)
HMC356LP3 / 356LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
v03.0610
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 49
Typical Supply Current vs. Vdd
Vdd (Vdc) Idd (mA)
+4.5 103
+5.0 104
+5.5 105
Drain Bias Voltage (Vdd) +8.0 Vdc
RF Input Power (RFIN)(Vdd = +5.0 Vdc) +15 dBm
Channel Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 14 mW/°C above 85 °C) 0.910 W
Thermal Resistance
(channel to ground paddle) 71.4 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Absolute Maximum Ratings
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
HMC356LP3 / 356LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
v03.0610
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC356LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 356
XXXX
HMC356LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 356
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 50
Pin Number Function Description Interface Schematic
1, 5, 8, 9, 10,
12, 13, 14 N/C No connection necessary.
These pins may be connected to RF/DC ground.
2, 4, 6,16 GND These pins and package ground paddle
must be connected to RF/DC ground.
3RFIN This pin is matched to 50 Ohms with a 51 nH
inductor to ground. See Application Circuit.
7ACG
AC Ground - An external capacitor of 0.01μF to
ground is required for low frequency bypassing.
See Application Circuit for further details.
11 RFOUT This pin is AC coupled and matched to 50 Ohms.
15 Vdd Power supply voltage. Choke inductor and bypass
capacitor are required. See application circuit.
Pin Descriptions
Application & Evaluation PCB Circuit
Note 1: Choose value of capacitor C1 for low frequency
bypassing. A 0.01 μF ±10% capacitor is recommended.
Note 2: L1, L2 and C1 should be located as close to pins as
possible.
HMC356LP3 / 356LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
v03.0610
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 51
Item Description
J1 - J2 PCB Mount SMA RF Connector
J3 - J4 DC Pin
C1 10,000 pF Capacitor, 0402 Pkg.
C2 10,000 pF Capacitor, 0603 Pkg.
L1 51 nH Inductor, 0402 Pkg.
L2 36 nH Inductor, 0603 Pkg.
U1 HMC356LP3 / HMC356LP3E Ampli er
PCB [2] 106722 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
Evaluation PCB
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from
Hittite upon request.
List of Materials for Evaluation PCB 107795 [1]
HMC356LP3 / 356LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
v03.0610
