Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability. Available in a plastic overmold package capable of delivering a minimum output power of 30 W, it is ideally suited for today's RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Value Unit RJC 2.0 C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C Derate Above 25 C Operating Junction Temperature Storage Temperature Range Sym VDSS VGS PD Value 65 -0.5, +15 87.5 Unit Vdc Vdc W -- TJ 0.5 200 W/C C TSTG -65, +150 C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* Figure 1. AGR09030GUM Package Features Typical performance ratings are for IS-95 CDMA, pilot, sync, paging, and traffic codes 8--13: -- Output power (POUT): 7 W. -- Power gain: 19.5 dB. -- Efficiency: 29%. -- Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): 750 kHz offset: -47 dBc. 1.98 MHz offset: -62 dBc. -- Input return loss: -15 dB. High-reliability, gold-metalization process. High gain, efficiency, and linearity. Integrated ESD protection. Si LDMOS. Industry-standard packages. 40 W typical output power. AGR09030GUM HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR09030GUM 30 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet August 2004 Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Off Characteristics Drain-source Breakdown Voltage (VGS = 0, ID = 100 A) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1.0 A) Gate Threshold Voltage (VDS = 10 V, ID = 450 A) Gate Quiescent Voltage (VDS = 28 V, IDQ = 330 mA) Drain-source On-voltage (VGS = 10 V, ID = 1.0 A) Symbol Min Typ Max Unit V(BR)DSS IGSS IDSS 65 -- -- -- -- -- -- 1.3 4 Vdc Adc Adc GFS VGS(TH) VGS(Q) VDS(ON) -- -- -- -- 3 -- 3.5 0.25 -- 4.2 -- -- S Vdc Vdc Vdc Symbol Min Max Unit Table 5. RF Characteristics Parameter Typ Dynamic Characteristics Input Capacitance -- 56 -- pF CISS (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Output Capacitance -- 15.7 -- pF COSS (VDS = 28 Vdc, VGS = 0, f = 1 MHz) -- 0.73 -- pF CRSS Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Tests (in Agere Systems Supplied Test Fixture) (Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz) 18 19.5 -- dB GL Linear Power Gain (VDS = 28 V, POUT = 7 W, IDQ = 330 mA) 30 40 -- W P1dB Output Power (VDS = 28 V, 1 dB compression, IDQ = 330 mA) -- 60 -- % Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 330 mA) IMD -- -35 -- dBc Third-order Intermodulation Distortion (100 kHz spacing, VDS = 28 V, POUT = 30 WPEP, IDQ = 330 mA, typical efficiency = 42%) Input Return Loss RL -- -15 -- dB Ruggedness -- No degradation in output power. (VDS = 28 V, POUT = 30 W, IDQ = 330 mA, f = 880 MHz, VSWR = 10:1, all angles) 2 Agere Systems Inc. Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09030GUM VDD + C19 C20 C21 VGG + C15 C22 C23 C24 C25 FB1 R3 Z22 + C14 Z19 R2 C13 C12 C11 C10 C9 C8 Z20 C18 Z13 Z21 RF OUTPUT C17 R1 Z1 Z2 Z4 Z5 C3 Z6 Z7 Z8 Z9 Z10 Z18 RF INPUT Z17 Z16 C2 C1 C4 Z3 C5 C16 R4 Z14 Z11 Z12 2 DUT 3 C6 Z15 1 C7 PINS: 1. DRAIN 2. GATE 3. SOURCE A. Schematic Parts List: (R) Murata chip capacitor: C12, C23: 0.01 F GRM40X7R103K100AL. 0603 chip capacitor: C10, C22: 220 pF. (R) Sprague tantalum chip capacitor: C14, C15, C25: 22 F, 35 V. (R) Kreger ferrite bead: FB1 2743D19447. (R) Kemet chip capacitor: C13, C24 0.10 F C1206C104KRAC7800. (R) Vitramon chip capacitor: C11, C22: 2200 pF, VJ1206Y222KXA. (R) Taconic ORCER RF35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. Microstrip line: Z1 0.334 in. x 0.066 in.; Z2 0.042 in. x 0.066 in.; Z3 0.344 in. x 0.050 in.; Z4 0.045 in. x 0.066 in.; Z5 0.074 in. x 0.066 in.; Z6 0.920 in. x 0.066 in.; Z7 0.050 in. x 0.066 in.; Z8 0.226 in. x 0.066 in.; Z9 0.785 in. x 0.150 in.; Z10 0.050 in. x 0.600 in.; Z11 0.499 in. x 0.600 in.; Z12 0.050 in. x 0.600 in.; Z13 1.024 in. x 0.050 in.; Z14 0.180 in. x 0.500 in.; Z15 0.050 in. x 0.500 in.; Z16 0.534 in. x 0.500 in.; Z17 0.050 in. x 0.500 in.; Z18 0.675 in. x 0.100 in.; Z19 0.050 x 0.066; Z20 0.507 in. x 0.066 in.; Z21 0.891 in. x 0.066 in.; Z22 2.048 in. x 0.050 in. ATC(R) chip capacitor: C1: 8.2 pF 100A8R2JW; C2: 47 pF 100A470JW; C3, C8, C18, C19: 47 pF 100B470JW; C4: 3.0 pF 100B3R0BW; C5: 3.9 pF 100A3R9JW; C6, C7: 12 pF 100B120JW; C9, C20: 10 pF 100B100JW; C16: 9.1 pF 100B9R1JW; C17: 4.7 pF 100B4R7JW. 1206 size, 0.25 W, fixed film, chip resistors: R1: 51 , RM73B2B510J; R2: 47 k, RM73B2B473J; R3: 1 k, RM73B2B102J. 0805 size, 0.25 W, fixed film, chip resistor: R4: 10 , RK73H2A10R0F. B. Component Layout Figure 2. AGR09030GUM Test Circuit Agere Systems Inc. 3 AGR09030GUM 30 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet August 2004 U CT IN D 90 0.6 10 0.1 0.4 20 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 50 0.5 0.4 0.3 0.2 f3 50 0.1 0.2 ) / Yo (-jB CE 0 1. IV CT DU IN 0 2. 0.11 -100 1.8 5 -90 0.13 -110 0.1 0.0 0.0 -70 40 -1 43 8 2 0.4 9 0.4 0. 07 -1 30 1 0.4 0.39 0.38 F 0.37 0.12 0.6 1.6 0.36 1.0 1.2 0.35 0.9 0.14 -80 -4 0 0.15 0.8 1.4 0.7 -70 0 -5 6 -4 4 (-j 0. 0 -12 5 0.1 0.3 35 -5 3 -60 -60 7 0.1 0.3 CA P AC I TI V 0 -65 .5 0.2 -30 32 CE CO M T 06 Z X/ 0. ER EA CT AN EN 0. 18 0. 0 -5 -25 PO N 0. 0.4 5 0.0 ,O o) R -75 0.6 0 31 0. 19 0. 44 -20 3. -85 AN PT CE US ES 0.8 -80 0 4.0 4 0.0 0 -15 1. -15 0.3 5 0.4 0.2 8 0.2 -4 0 4 0. 0.2 9 0.3 1 -30 6 8 0. 0.2 2 0.2 0.2 0.4 0.6 5.0 0.48 0.4 ZS f3 10 0.1 0.2 ZL -20 D OW A R 7 HST 0.4 N GT -170 EL E AV W < -90 -160 f1 f1 -10 L OA D < RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 20 0.49 0. 8 0.25 0.2 6 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D EG REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES L E OF ANG Z0 = 9 0.0 > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 180 170 Typical Performance Characteristics MHz (f) 865 (f1) 880 (f2) 895 (f3) ZL ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 0.720 - j0.820 3.59 - j0.289 0.814 - j0.888 3.49 - j0.672 0.800 - j0.872 3.53 - j0.466 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances 4 Agere Systems Inc. Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) -30 -35 ACP+ ACP- FREQUENCY = 880 MHz -40 ACPR (dBc)Z -45 -50 -55 ACP1+ ACP- -60 -65 -70 -75 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 POUT (W)Z Test Conditions: VDD = 28 Vdc, IDQ = 330 mA, TC = 30 C. IS-95 CDMA pilot, paging, sync, traffic codes 8 through 13. Offset 1 = 750 kHz, 30 kHz BW, offset 2 = 1.98 MHz, 30 kHz BW. Figure 4. ACPR vs. POUT 22 0 POWER GAIN POUT = 7 W 19 18 -2 -4 -6 POUT = 40 W 17 16 -8 -10 -12 15 14 -14 -16 13 12 -18 RETURN LOSS 11 10 -20 9 8 -24 -22 INPUT RETURN LOSS (dB)Z POWER GAIN (dB)Z 21 20 -26 7 860 865 870 875 880 885 890 895 -28 900 FREQUENCY (MHz)Z Test Conditions: VDD = 28 Vdc, IDQ = 330 mA, TC = 30 C. Waveform = CW. Figure 5. Power Gain and Return Loss vs. Frequency Agere Systems Inc. 5 AGR09030GUM 30 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet August 2004 Typical Performance Characteristics (continued) 20 POWER GAIN (dB)Z 19 18 17 16 15 865 MHz 880 MHz 895 MHz 14 5 10 15 20 25 30 35 40 45 50 55 POUT (W)Z Test Conditions: VDD = 28 Vdc, IDQ = 330 mA, TC = 30 C. Waveform = CW. Figure 6. Power Gain vs. Power Out 60 140 55 POUT 120 865 MHz 880 MHz 895 MHz 45 POUT (W) Z 40 110 100 35 90 30 80 25 895 MHz 880 MHz 865 MHz 20 15 70 60 50 10 40 5 30 0 DRAIN EFFICIENCY (%)Z 50 130 20 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 PIN (W)Z Test Conditions: VDD = 28 Vdc, IDQ = 330 mA, TC = 30 C. Waveform = CW. Figure 7. Power Out and Drain Efficiency vs. Input Power 6 Agere Systems Inc. Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 21.0 IDQ = 410 mA 20.5 IDQ = 500 mA 20.0 POWER GAIN (dB)Z 19.5 19.0 18.5 IDQ = 250 mA 18.0 IDQ = 330 mA IDQ = 170 mA 17.5 17.0 16.5 16.0 0 2 4 6 8 10 12 14 16 18 20 22 POUT (W)Z Test Conditions: VDD = 28 Vdc, frequency = 880 MHz, TC = 30 C. Waveform = CW. Figure 8. Power Gain vs. Power Out -15 -20 -25 IM3IM3+ IMD (dBc)Z -30 -35 IM5IM5+ -40 -45 IM7IM7+ -50 -55 -60 -65 -70 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 OUTPUT POWER (WPEP)Z Test Conditions: VDD = 28 Vdc, IDQ = 330 mA, F1 = 880 MHz, F2 = 880.1 MHz, TC = 30 C. Figure 9. Third-order Intermodulation Distortion vs. Power Out Agere Systems Inc. 7 AGR09030GUM 30 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet August 2004 AGR09030GUM Package Dimensions Controlling dimensions are in millimeters. 0.65 (0.03) 1.1 (0.043) 2 PLACES 0.315 (0.013) 0.315 (0.013) 1.00 (0.039) 1. DRAIN 16.00 11.00 / 11.30 MAX (0.630) (0.433 / 0.448 MAX) 1.27 (0.0495) AGERE AGR09030GUM YYWWL XXXXX ZZZZZZZZ 3. SOURCE 2.95 REF 6.00 0.20 (0.115) (0.234 0.0078) 2.50 (0.098) 2. GATE 0.61 x 0.61 MAX x 45 (0.025 x 0.025) 2.90 (0.114) 2 PLACES 11.00 2.0 (0.434 0.078) 11.35 (0.448) 2.24 (0.088) TOP VIEW 15.90 / 16.20 MAX (0.626 / 0.6378 MAX) BOTTOM VIEW 2.95 (0.115) 14 1 0.254 (0.099) 3.35 REF (0.131) 0.90 (0.036) 3.15 0.15 (0.123 0.006) 1.60 (0.063) 0.015 (0.0006) SIDE VIEW END VIEW millimeters Note: Dimensions are shown in ------------------------- . ( inches ) Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. The last three letters of the part number denote wafer technology, flange type, and packaging technology. YYWWL is the date code including place of manufacture: year year work week (YYWW), L = location (P = Phillipines). XXXXX = five-digit wafer lot number. ZZZZZZZZ = Assembly lot number. 8 Agere Systems Inc. Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET RF Power Product Information For product and application information, please visit our website: http://www.agere.com/rfpower. ATC is a registered trademark of American Technical Ceramics Corp. Kemet is a registered trademark of KRC Trade Corporation. Sprague is a registered trademark of Sprague Electric Company Corporation. Murata is a registered trademark of Murata Electronics North America, Inc. Kreger is a registered trademark of Kreger Components, Inc. Vitramon is a registered trademark of Vitramon Incorporated. Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd. For additional information, contact your Agere Systems Account Manager or the following: INTERNET: http://www.agere.com E-MAIL: docmaster@agere.com N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138 1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106) ASIA: CHINA: (86) 21-54614688 (Shanghai), (86) 755-25881122 (Shenzhen) JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei) EUROPE: Tel. (44) 1344 296 400 Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc. Copyright (c) 2004 Agere Systems Inc. All Rights Reserved August 2004 DS04-246RFPP (Replaces PB04-094RFPP)