Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
DA228K
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Ultra high speed switching
Features
1) Small mold type. (SMD3)
2) High reliability.
Construction Structure
Silicon epitaxial planar
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge mA
Pd mW
Tj °C
Tstg °C
f MHz
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
VF- - 1.2 V IF=100mA
IR- - 0.1 μAVR=80V
Ct32 - - 5.0 pF
Ct13 - - 6.5 pF
Ct12 - - 5.0 pF VR=0V , f=1MHz
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Storage temperature 55 to 150
Rated in slash put frequency 100
Power dissipation 200
Junction temperature 150
Average rectified forward current (Single) 100
Surge current (t=1us) 300
Reverse voltage (DC) 80
Forward current (Single) 200
Parameter Limits
Reverse voltage (repetitive peak) 80
SMD3
1.0MIN.
0.8MIN.
2.4
0.95
1.9
3.2±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.1
　　　　　 0
3.5±0.05 1.75±0.1
8.0±0.2
1.35±0.1
3.2±0.1
φ1.05MIN
3.2±0.1
0.3±0.1
5.5±0.2
0～0.5
ROHM : SMD3
JEITA : SC-59
week code
JEDEC :S0T-346
0.4
＋0.1
－0.06
2.9±0.2
2.8±0.2
1.9±0.2
1.6
＋0.2
－0.1
0.95 0.95
＋0.1
　－0.05
各リードとも
同寸法
0～0.1
0.15
1.1±0.2
0.01
0.8±0.1
(2) (1)
(3)
0.3～0.6
(1)D2:C (2)D1:A
(3)D1:C D2:A
Each lead has same dimension
1/3 2011.06 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DA228K 　
0.1
1
10
012345678910
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000 1100
Ta=25℃
Ta=-25℃
Ta=125℃
Ta=150℃
Ta=75℃
D1
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000 1100 1200
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=150℃
Ta=125℃
D2
0.00001
0.0001
0.001
0.01
0.1
1
10
100
0 1020304050607080
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=150℃
D1
0.0001
0.001
0.01
0.1
1
10
100
0 1020304050607080
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=150℃
D2
0.1
1
10
012345678910
f=1MHz f=1MHz
940
950
960
970
980
990
D1
AVE:961.5mV
Ta=25℃
IF=100mA
n=30pcs
1010
1020
1030
1040
1050
1060
D2
AVE:1035.0mV
Ta=25℃
IF=100mA
n=30pcs
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
D1
Ta=25℃
VR=15V
n=30pcs
AVE:0.1065nA
0
1
2
3
4
5
6
7
8
9
10
D2
Ta=25℃
VR=15V
n=30pcs
AVE:0.620nA
0
1
2
3
4
5
Ct32
AVE:3.34pF
Ta=25℃
VR=0V
f=1MHz
n=10pcs
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0.1
1
10
012345678910
Ct12 f=1MHz
Ct32 Ct13
2/3 2011.06 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DA228K 　
0
1
2
3
4
5
Ct13
0
10
20
30
40
0246810
0
1
2
3
4
5
Ct12
REVERSE RECOVERY TIME:trr(ns)
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
FORWARD CURRENT:IF(mA)
trr-IF CHARACTERISTICS
VR=6V
D2
D1
0.1
1
10
1 10 100 1000
t
Ifsm
VR=6V
D2
D1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=50mA
300us
time
Mounted on epoxy board
0
1
2
3
4
5
6
7
8
9
10
D1
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE:0.670kV
AVE:6.43kV
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
D2
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE:1.87kV
AVE:13.56kV
Ct DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
AVE:3.64pF
Ta=25℃
VR=0V
f=1MHz
n=10pcs
Ct DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
AVE:1.86pF
Ta=25℃
VR=0V
f=1MHz
n=10pcs
3/3 2011.06 - Rev.A
R1120A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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Notes