ES3AB thru ES3JB
FEATURES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.003 ounces, 0.093 grams
SMB
All Dimensions in millimeter
SMB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
4.06 4.57
3.94 3.30
1.96 2.21
0.31 0.15
5.21 5.59
0.05 0.20
2.01 2.50
0.76 1.52
C
B
A
H
E
F
G
D
NOTES : 1. Reverse Recovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
SURFACE MOUNT
SUPER FAST RECTIFIERS
REVERSE VOLTAGE -
50
to
400
Volts
FORWARD CURRENT -
3.0
Amperes
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 5, Apr-2010, KSGB02
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
3.0
100
0.92
Typical Thermal Resistance
Typical Junction Capacitance (Note 2)
UNIT
CHARACTERISTICS SYMBOL ES3AB
Maximum Reverse Recovery Time (Note 1)
@TJ =25 C
@TJ=125 C
Typical Reverse Recovery Time
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
RR
T
RR
C
J
R
θ JA
R
θ JL
R
θ JC
50
35
50
ES3BB
100
70
100
ES3CB
150
105
150
ES3DB
200
140
200
ES3GB
400
280
400
ES3JB
600
420
600
V
V
V
1.25 1.30
A
A
V
uA
ns
ns
pF
C/W
10
500
25
20
45
Operating Temperature Range T
J
C
-55 to + 150
Storage Temperature Range T
STG
C
-55 to + 150
30
35
50
15
15
@TL =110 C