©2009 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FQD2N60C/FQU2N60C Rev. B3
FQD2N60C/FQU2N60C 600V N-Channe l MOSFET
FQD2N60C/FQU2N60C
600V N-Channel MOSFET
Features
• 1.9A, 600V, R
DS(on)
= 4.7Ω @V
GS
= 10 V
• Low gate charge (typical 8.5 nC)
• Low Crss (typical 4.3 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
Thermal Charac t eris tics
* When mounted on the minimum pad size recommended (PCB Mount)
●
●●
●
●
●●
●
●
●●
●
▲
▲▲
▲
!
!!
!
!
!!
!
!
!!
!
◀
◀◀
◀
●
●●
●
●
●●
●
●
●●
●
▲
▲▲
▲
!
!!
!
!
!!
!
!
!!
!
◀
◀◀
◀
S
D
G
I-PAK
FQU Series
D-PAK
FQD Series GSD
GS
D
Symbol Parameter FQD2N60C / FQU2N60C Units
V
DSS
Drain-Source Voltage 600 V
I
D
Drain Current - Continuous (T
C
= 25°C) 1.9 A
- Continuous (T
C
= 100°C) 1.14 A
I
DM
Drain Current - Pulsed
(Note 1)
7.6 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
120 mJ
I
AR
Avalanche Current
(Note 1)
1.9 A
E
AR
Repetitive Avalanche Energy
(Note 1)
4.4 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
A
= 25°C)* 2.5 W
Power Dissipation (T
C
= 25°C) 44 W
- Derate above 25°C 0.35 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter Typ Max Units
R
θJC
Thermal Resistance, Junction-to-Case -- 2.87 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient* -- 50 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
• RoHS Compliant
January 2009
QFET
®
2www.fairchildsemi.com
FQD2N60C/FQU2N60C Rev. B3
FQD2N60C/FQU2N60C 600V N-Channe l MOSFET
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, I
AS
= 2A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25°C
3. I
SD
≤ 2A, di/dt ≤ 200A/µs, V
DD
≤ BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Device Marking Device Package Reel Size Tape Width Quantity
FQD2N60C FQD2N60C D-PAK - -
FDU2N60C FDU2N60C I-PAK - -
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 µA 600 -- -- V
∆BV
DSS
/
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C -- 0.6 -- V/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 600 V, V
GS
= 0 V -- -- 1 µA
V
DS
= 480 V, T
C
= 125°C -- -- 10 µA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA2.0--4.0V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 0.95 A -- 3.6 4.7 Ω
g
FS
Forward Transconductance V
DS
= 40 V, I
D
= 0.95 A
(Note 4)
-- 5.0 -- S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 180 235 pF
C
oss
Output Capacitance -- 20 25 pF
C
rss
Reverse Transfer Capacitance -- 4.3 5.6 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time V
DD
= 300 V, I
D
= 2 A,
R
G
= 25 Ω
(Note 4, 5)
-- 9 28 ns
t
r
Turn-On Rise Time -- 25 60 ns
t
d(off)
Turn-Off Delay Time -- 24 58 ns
t
f
Turn-Off Fall Time -- 28 66 ns
Q
g
Total Gate Charge V
DS
= 480 V, I
D
= 2 A,
V
GS
= 10 V
(Note 4, 5)
-- 8.5 12 nC
Q
gs
Gate-Source Charge -- 1.3 -- nC
Q
gd
Gate-Drain Charge -- 4.1 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 1.9 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 7.6 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 1.9 A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= 2 A,
dI
F
/ dt = 100 A/µs
(Note 4)
-- 230 -- ns
Q
rr
Reverse Recovery Charge -- 1.0 -- µC
3www.fairchildsemi.com
FQD2N60C/FQU2N60C Rev. B3
FQD2N60C/FQU2N60C 600V N-Channe l MOSFET
Typical Perfo rmance Characte rist ics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-2
10
-1
10
0
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
※
1. 250µ s Pulse Test
2. T
C
= 25
℃
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
246810
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
※
1. VDS = 40V
2. 250µ s Pulse Test
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
012345
0
2
4
6
8
10
12
V
GS
= 20V
V
GS
= 10V
Note : T
※
J
= 25
℃
R
DS(ON)
[Ω],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
-1
10
0
150
℃
Notes :
※
1. V
GS
= 0V
2. 250µ s Pulse Test
25
℃
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
50
100
150
200
250
300
350
400
450
500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
※
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]
0246810
0
2
4
6
8
10
12
V
DS
= 300V
V
DS
= 120V
V
DS
= 480V
Note : I
※
D
= 2A
V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
4
www.fairchildsemi.com
FQD2N60C/FQU2N60C Rev. B3
FQD2N60C/FQU2N60C 600V N-Channe l MOSFET
Typical Perfo rmance Characte rist ics
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Typical Drain Current Slope Figure 12. Typical Drain-S ource Voltage
vs. Gate Resistance Slope vs. Gate Resistance
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :
※
1. V
GS
= 0 V
2. I
D
= 250 µ A
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
※
1. V
GS
= 10 V
2. I
D
= 0.95 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
T
J, Juncti on Temperature [o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100 ms
DC
10 ms
1 ms
100
µ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
※
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
25 50 75 100 125 150
0.0
0.4
0.8
1.2
1.6
2.0
ID, Drain Current [A]
TC
, Case Temperature [ ]
℃
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
0 Notes :
※
1. Z
θJC
(t) = 2.87 /W Max.
℃
2. D uty Factor, D =t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θJC
(t), Thermal Response
t
1
, Square W ave Pulse Duration [sec]
t
1
P
DM
t
2
5
www.fairchildsemi.com
FQD2N60C/FQU2N60C Rev. B3
FQD2N60C/FQU2N60C 600V N-Channe l MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & W avefo rms
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=LI
AS2
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
L
I
D
t
p
E
AS
=LI
AS2
----
2
1
E
AS
=LI
AS2
----
2
1
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
LL
I
D
I
D
t
p
6
www.fairchildsemi.com
FQD2N60C/FQU2N60C Rev. B3
FQD2N60C/FQU2N60C 600V N-Channe l MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
LL
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
7
www.fairchildsemi.com
FQD2N60C/FQU2N60C Rev. B3
FQD2N60C/FQU2N60C 600V N-Channe l MOSFET
Mechanical Dimensions
TO-252 (DPAK) (FS PKG Code 36)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Pa rt Weight per unit (gram): 0.33
8
www.fairchildsemi.com
FQD2N60C/FQU2N60C Rev. B3
FQD2N60C/FQU2N60C 600V N-Channe l MOSFET
Mechanical Dimensions
Dimensions in Millimeters
I - PAK
Rev. I37
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
9
www.fairchildsemi.com
FQD2N60C/FQU2N60C Rev. B3
FQD2N60C/FQU2N60C 600V N-Channe l MOSFET
