NE6510179A-EVPW24 - CEL - Product.Network

NEC's 3W, L&S-BAND

MEDIUM POWER GaAs HJ-FET

FEATURES

• LOW COST PLASTIC SURFACE MOUNT PACKAGE

Available on Tape and Reel

• USABLE TO 3.7 GHz:

Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,

PCS

• HIGH OUTPUT POWER:

35 dBm TYP with 5.0 V Vdc

32.5 dBm TYP with 3.5 V Vdc

• HIGH LINEAR GAIN:

10 dB TYP at 1.9 GHz

• LOW THERMAL RESISTANCE:

5°C/W

NE6510179A

DESCRIPTION

NEC's NE6510179A is a GaAs HJ-FET designed for medium

power mobile communications, Fixed Wireless Access, ISM,

WLL, PCS, IMT-2000, and MMDS transmitter and subscriber

applications. It is capable of delivering 1.8 watts of output

power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V

with high linear gain, high efficiency, and excellent linearity.

Reliability and performance uniformity are assured by NEC's

stringent quality and control procedures.

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE 79A

ELECTRICAL CHARACTERISTICS (TC = 25°C)

PART NUMBER NE6510179A

PACKAGE OUTLINE 79A

SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS

POUT Output Power dBm 31.5 32.5

GLLinear Gain1dB 10.0

ηADD Power Added Efficiency % 50 58

IDDrain Current A 0.72

IDSS Saturated Drain Current A 2.4 VDS = 2.5 V; VGS = 0 V

VPPinch-Off Voltage V -2.0 -0.4 VDS = 2.5 V; ID = 14 mA

RTH Thermal Resistance °C/W 5 8 Channel to Case

BVGD Gate to Drain Breakdown Voltage V 12 IGD = 14 mA

Functional

Characteristics

Electrical DC

Characteristics

Notes:

1. Pin = 0 dBm

2. DC performance is tested 100% . Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1

reject for several samples.

Note: Unless otherwise specified, tolerance is ±0.2 mm

f = 1900 MHz, VDS = 3.5 V,

Pin = +25 dBm, Rg = 100 Ω

IDSQ = 200 mA (RF OFF)2

T I

Source

Gate Drain

4.2 MAX

5.7 MAX

4.4 MAX

0.8 – 0.15

0.6 – 0.15

5.7 MAX

0.4 – 0.15

Source

Gate

Drain

1.2 MAX

1.0 MAX

3.6 – 0.2

0.8 MAX

0.9 – 0.2

0.2 – 0.1

1.5 – 0.2

BOTTOM VIEW

California Eastern Laboratories

DISCONTINUED

ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C)

SYMBOLS PARAMETERS UNITS RATINGS

VDS Drain to Source Voltage V 8

VGS Gate to Source Voltage V -4

IDS Drain Current A 2.8

IGS Gate Current (IGF, IGR) mA±25

PTTotal Power Dissipation2W15

TCH Channel Temperature °C 150

TSTG Storage Temperature °C -65 to +150

RECOMMENDED OPERATING LIMITS

SYMBOLS PARAMETERS UNITS TYP MAX

VDS Drain to Source Voltage V 3.5 6.0

TCH Channel Temperature °C +125

GCOMP Gain Compression1dB 3.0

Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

NE6510179A

PART NUMBER QTY

NE6510179A-T1-A 1 K/Reel

NE6510179A-A Bulk, 100 piece min.

ORDERING INFORMATION

TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC = 25°C)

SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS

POUT Output Power dBm 35.0

GLLinear Gain1dB 10.0

ηADD Power Added Efficiency % 56

IDDrain Current A 1.2

POUT Output Power dBm 31.5

GLLinear Gain1dB 15.0

ηADD Power Added Efficiency % 70

IDDrain Current A 0.53

f = 1900 MHz, VDS = 5.0 V,

Pin = +25 dBm, Rg = 100 Ω

IDSQ = 200 mA (RF OFF)

Notes:

1. Pin = 0 dBm

f = 900 MHz, VDS = 3.5 V,

Pin = +20 dBm, Rg = 100 Ω

IDSQ = 200 mA (RF OFF)

Note:

1. Recommended maximum gain compression is 3.0 dB at

VDS > 4.2 V.

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

Case Temperature, TC (°C)

25°C

15010050

= 8°C/W

Total Power Dissipation, P

(W)

DISCONTINUED

Transconductance, G

(mS)

TYPICAL PERFORMANCE CURVES (TA = 25°C)

Drain Current, I

(A)

TRANSCONDUCTANCE AND DRAIN

CURRENT vs. GATE VOLTAGE

Gate Voltage, GV (V)

DRAIN CURRENT vs.

DRAIN VOLTAGE

Drain Voltage, VD (V)

2.00

1.50

1.00

0.50

2.50

0.8

0.6

0.4

0.2

1.00

-.80-1.0 -.60 -.20 0.00-.40

NE6510179A

Drain Current, I

(A)

Maximum Available Gain, G

MAG

(dB)

Arrhenius Plots, MTTF (hours)

MAXIMUM AVAILABLE GAIN vs.

FREQUENCY

Frequency, GHz

ARRHENIUS PLOTS vs.

JUNCTION TEMPERATURE

Junction Temperature, T/TCH (1/K/1000)

0.1 4.0

4.6 V, 300 mA

3.5 V, 150 mA

2.2 V, 200 mA

1.0E+06

1.0E+05

1.0E+04

1.0E+03

1.0E+07

1.81.6 2 2.42.2 2.6 32.8

1.35E+06 Hrs

= 110°C)

= 1.0

1805 Hrs

= 217°C)

2.5

2.0

1.5

1.0

0.5

012 3456

0 V

-0.2 V

-0.4 V

-0.6 V

-0.8 V

-1.0 V

DISCONTINUED

NE6510179A

j50

j25

j10

-j10

-j25

-j50

-j100

j100

10 25 50 100

120°

90°

60°

30°

150°

180°

-150°

-120°

-90°

-60°

-30°

0°

TYPICAL SCATTERING PARAMETERS (TA = 25°C)

FREQUENCY S11 S21 S12 S22 K MAG1

GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)

0.50 0.956 179.67 2.813 82.32 0.018 5.20 0.842 176.48 0.29 21.87

0.60 0.955 177.71 2.343 79.83 0.018 5.02 0.842 175.21 0.34 21.09

0.70 0.956 175.93 2.016 77.44 0.018 5.41 0.843 173.93 0.40 20.38

0.80 0.955 174.33 1.765 75.21 0.018 5.58 0.843 172.76 0.46 19.81

0.90 0.955 172.86 1.573 73.00 0.019 5.93 0.842 171.63 0.51 19.24

1.00 0.955 171.45 1.418 70.78 0.019 6.32 0.842 170.47 0.57 18.79

1.10 0.955 170.09 1.289 68.54 0.019 6.08 0.841 169.22 0.62 18.33

1.20 0.954 168.81 1.187 66.57 0.019 6.55 0.843 168.26 0.67 17.95

1.30 0.954 167.51 1.097 64.47 0.019 6.48 0.842 167.19 0.72 17.59

1.40 0.953 166.27 1.021 62.40 0.019 6.73 0.842 166.12 0.78 17.26

1.50 0.953 165.06 0.955 60.35 0.019 6.94 0.843 165.06 0.82 16.92

1.60 0.953 163.84 0.898 58.36 0.019 6.98 0.843 164.05 0.88 16.65

1.70 0.953 162.63 0.847 56.38 0.020 7.33 0.843 163.06 0.92 16.36

1.80 0.952 161.41 0.802 54.34 0.020 7.16 0.842 161.99 0.98 16.12

1.90 0.951 160.23 0.761 52.35 0.020 7.48 0.844 160.95 1.05 14.59

2.00 0.951 159.05 0.726 50.45 0.020 8.27 0.844 159.99 1.10 13.76

2.10 0.952 157.87 0.693 48.50 0.020 8.79 0.845 159.02 1.13 13.19

2.20 0.951 156.61 0.662 46.53 0.020 8.70 0.844 158.03 1.20 12.48

2.30 0.951 155.50 0.635 44.55 0.020 8.69 0.845 157.05 1.23 12.10

2.40 0.950 154.36 0.611 42.67 0.020 8.71 0.846 156.09 1.27 11.66

2.50 0.950 153.22 0.587 40.91 0.020 8.92 0.847 155.25 1.31 11.27

2.60 0.950 152.11 0.565 39.04 0.020 8.87 0.847 154.33 1.37 10.81

2.70 0.950 150.95 0.545 37.19 0.020 9.41 0.848 153.36 1.41 10.49

2.80 0.950 149.81 0.528 35.36 0.021 9.87 0.850 152.46 1.44 10.17

2.90 0.949 148.69 0.510 33.69 0.020 10.32 0.852 151.70 1.50 9.81

3.00 0.949 147.51 0.494 31.91 0.021 10.98 0.852 150.82 1.52 9.50

3.10 0.949 146.33 0.478 30.21 0.021 11.59 0.854 149.99 1.59 9.17

3.20 0.949 145.20 0.465 28.41 0.021 12.25 0.855 149.11 1.58 8.94

3.30 0.950 144.05 0.452 26.80 0.021 13.46 0.857 148.32 1.61 8.71

3.40 0.949 142.93 0.439 25.05 0.022 13.17 0.858 147.55 1.62 8.41

3.50 0.949 141.85 0.427 23.40 0.022 13.36 0.860 146.79 1.64 8.21

3.60 0.949 140.70 0.416 21.75 0.022 13.56 0.862 146.14 1.64 8.00

3.70 0.949 139.60 0.405 20.23 0.023 13.89 0.864 145.53 1.64 7.85

3.80 0.949 138.47 0.394 18.70 0.023 13.96 0.865 145.01 1.65 7.64

3.90 0.951 137.45 0.384 17.31 0.023 14.08 0.869 144.58 1.59 7.67

4.00 0.950 136.38 0.374 15.99 0.023 14.68 0.875 144.34 1.59 7.50

NE6510179A

VD = 3.5 V, ID = 150 mA

Coordinates in Ohms

Frequency in GHz

VD = 3.5 V, ID = 150 mA

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

Note:

1. Gain Calculation:

MAG = |S

|K - 1

(

K ± ∆ = S

- S

When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S

|, K = 1 + | ∆ | - |S

| - |S

222

2 |S

Note: This file and many other s-parameter files can be downloaded from www.cel.com

DISCONTINUED

NE6510179A

j50

j25

j10

-j10

-j25

-j50

-j100

j100

10 25 50 100

-20

-22.5

17.5

-26

-32

TYPICAL SCATTERING PARAMETERS (TA = 25°C)

FREQUENCY S11 S21 S12 S22 K MAG1

GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)

0.50 0.964 179.30 3.090 82.99 0.013 11.07 0.863 175.80 0.38 23.76

0.60 0.963 177.40 2.574 80.69 0.013 12.04 0.862 174.60 0.45 22.97

0.70 0.964 175.60 2.215 78.48 0.013 13.41 0.863 173.30 0.52 22.31

0.80 0.963 174.00 1.940 76.44 0.013 14.52 0.863 172.10 0.59 21.74

0.90 0.963 172.60 1.730 74.41 0.014 15.48 0.862 171.00 0.63 20.92

1.00 0.962 171.20 1.559 72.36 0.014 16.81 0.862 169.90 0.71 20.47

1.10 0.962 169.80 1.418 70.30 0.014 17.13 0.861 164.30 0.77 20.06

1.20 0.962 168.50 1.306 68.47 0.014 18.35 0.862 167.60 0.83 19.70

1.30 0.962 167.20 1.207 66.55 0.015 18.76 0.861 166.50 0.85 19.06

1.40 0.961 166.00 1.124 64.61 0.015 19.61 0.861 165.40 0.92 18.75

1.50 0.961 164.80 1.053 62.72 0.015 20.22 0.861 164.30 0.97 18.46

1.60 0.960 163.60 0.990 60.89 0.015 20.71 0.862 163.30 1.03 17.10

1.70 0.960 162.40 0.934 59.08 0.016 21.61 0.861 162.30 1.05 16.30

1.80 0.960 161.10 0.885 57.16 0.016 21.54 0.860 161.20 1.10 15.55

1.90 0.959 159.90 0.841 55.31 0.016 22.43 0.861 160.10 1.16 14.76

2.00 0.959 158.80 0.803 53.56 0.016 23.77 0.861 159.10 1.22 14.17

2.10 0.959 157.60 0.766 51.76 0.017 24.20 0.861 158.20 1.22 13.71

2.20 0.958 156.30 0.733 49.92 0.017 24.45 0.859 157.20 1.29 13.09

2.30 0.958 155.20 0.704 48.04 0.017 24.16 0.860 156.10 1.32 12.76

2.40 0.957 154.00 0.677 46.31 0.018 24.58 0.862 155.10 1.33 12.33

2.50 0.957 152.90 0.652 44.72 0.018 24.86 0.863 154.30 1.36 11.99

2.60 0.957 151.80 0.627 42.98 0.018 24.96 0.861 153.40 1.42 11.58

2.70 0.957 150.60 0.606 41.20 0.018 25.58 0.862 152.40 1.46 11.27

2.80 0.957 149.50 0.587 39.47 0.019 25.67 0.864 151.40 1.43 11.01

2.90 0.956 148.30 0.568 37.95 0.019 26.27 0.865 150.70 1.49 10.63

3.00 0.956 147.20 0.550 36.32 0.019 27.34 0.865 149.80 1.54 10.30

3.10 0.956 146.00 0.534 34.72 0.020 28.08 0.868 149.00 1.52 10.01

3.20 0.956 144.80 0.519 32.99 0.020 28.08 0.868 148.00 1.54 9.81

3.30 0.957 143.70 0.505 31.47 0.021 29.01 0.869 147.20 1.51 9.61

3.40 0.955 142.50 0.491 29.85 0.021 28.15 0.869 146.50 1.57 9.24

3.50 0.955 141.50 0.478 28.29 0.022 28.47 0.870 145.70 1.55 8.99

3.60 0.955 140.30 0.467 26.73 0.022 28.09 0.873 145.00 1.55 8.89

3.70 0.955 139.20 0.455 25.35 0.023 28.10 0.873 144.40 1.54 8.64

3.80 0.956 138.00 0.443 23.91 0.023 27.80 0.874 143.90 1.54 8.53

3.90 0.957 137.00 0.431 22.54 0.024 27.69 0.877 143.50 1.48 8.44

4.00 0.956 135.90 0.421 21.29 0.024 27.86 0.883 143.20 1.49 8.32

NE6510179A

VD = 5.0 V, ID = 300 mA

Coordinates in Ohms

Frequency in GHz

VD = 5.0 V, ID = 300 mA

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

Note:

1. Gain Calculation:

MAG = |S

|K - 1

(

K ± ∆ = S

- S

When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S

|, K = 1 + | ∆ | - |S

| - |S

222

2 |S

Note: This file and many other s-parameter files can be downloaded from www.cel.com

DISCONTINUED

APPLICATION CIRCUIT (1.93-1.99 GHz)

NE6510179A

1 TF-100637 TEST CIRCUIT BLK 17

4 2-56 X 3/16 PHILLIPS PAN HEAD 16

2 MA101J C2, C3 CASE 1 100 pF CAP MURATA 15

1 MCR03J200 R1 0603 20 OHM RESISTOR ROHM 14

1 100A6RBCP150X C14 NOT USED CASE A 6.8 pF CAP ATC 13

1 100A4R3CP150X C4 CASE A 4.3 pF CAP ATC 12

2 100A240CP150X C5. C1 CASE A 24 pF CAP ATC 11

1 100A4R7CP150X C6 CASE A 4.7 pF CAP ATC 10

1 100A1RBCP150X C7 NOT USED CASE A 1.8 pF CAP ATC 9

2 TAJB475K010R C12, C13 CASE B 4.7 µF CAP AVX 8

2 GRM40X7R104K025BL C10, C11 0805 .1 µF CAP MURATA 7

2 GRM40C0G102J050BD C8, C9 0805 1000 pF CAP MURATA 6

1 NE6510179A U1 IC NEC 5

1 703401 P1 GROUND LUG CONCORD 4

1 1250-003 J3, J4 FEEDTHRU MURATA 3

2 2052-5636-02 J1, J2 FLANGE MOUNT JACK RECEPTACLE 2

T I

8 X

GND

RFIN

C11

C10

R1 C1

J2 RFOUT

100637 NE65XXX79A-EV

.034

C13

C12

GND

C8 C10 C12C13 C11 C9 C3

L = .874

W = .010

L = .890

W = .010

L = .280

W = .050

L = .260

W = .050

RF Input

J1 C5 NE6510179A J2

RF Output

Contact CEL Engineering for artwork

and more detailed information.

DISCONTINUED

NE6510179A

TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 5 V

Gain, I

DSQ

= 200 mA

Gain, I

DSQ

= 600 mA

PAE, I

DSQ

= 200 mA

PAE, I

DSQ

= 600 mA

20 22 24 26 28 30 32 34

0FC = 1.96 GHz,

= 3 V

20 22 2624 28 30 32 34 36

Gain, IDSQ = 200 mA

Gain, IDSQ = 600 mA

PAE, IDSQ = 200 mA

PAE, IDSQ = 600 mA

FC = 1.96 GHz, VDS = 5 V

Gain, I

DSQ

= 100 mA

Gain, I

DSQ

= 800 mA

OUT

, I

DSQ

= 100 mA

OUT

, I

DSQ

= 800 mA

OUT

= 16 dB for Gain

29 dB for P

SAT

VDS = 3 V

1.90 1.92 1.94 1.96 1.98 2.00 2.02

Gain, I

DSQ

= 100 mA

Gain, I

DSQ

= 800 mA

OUT

, I

DSQ

= 100 mA

OUT

, I

DSQ

= 800 mA

1.91 1.92 1.94 1.96 1.98 2.00 2.02

OUT

= 16 dB for Gain

29 dB for P

SAT

VDS = 5 V

IDSQ = 100 mA

IDSQ = 200 mA

IDSQ = 400 mA

IDSQ = 600 mA

IDSQ = 800 mA

20 21 22 23 24 25 26 27 28 29 30

= 1.96 GHz, P

OUT

= Each Tone

VDS = 3 V

DSQ

= 100 mA

DSQ

= 200 mA

DSQ

= 400 mA

DSQ

= 600 mA

DSQ

= 800 mA

FC = 1.96 GHz, POUT = Each Tone

VDS = 5 V

20 21 22 23 24 25 26 27 28 29 30

PAE & GAIN

vs. OUTPUT POWER

Gain, GA (dB)

Output Power, POUT (dBm) Output Power, POUT (dBm)

Gain, GA (dB)

PAE (%)

PAE & GAIN

vs. OUTPUT POWER

GAIN & SATURATED POWER

vs. FREQUENCY

Gain, G

(dB)

Frequency, f (GHz)

Saturated Power, PSAT (dBm)

GAIN & SATURATED POWER

vs. FREQUENCY

Gain, G

(dB)

Frequency, f (GHz)

Saturated Power, PSAT (dBm)

THIRD ORDER INTERMODULATION

vs. TOTAL OUTPUT POWER

Third Order Intermodulation Distortion, IM

(dBc)

Total Output Power, POUT (dBm)

THIRD ORDER INTERMODULATION

vs. TOTAL OUTPUT POWER

Third Order Intermodulation Distortion, IM

(dBc)

Total Output Power, POUT (dBm)

DISCONTINUED

NE6510179A

100 mA

200 mA

400 mA

600 mA

800 mA

= 1.96 GHz,

= 3 V

64 CH IS95 CDMA

ACPR2

1.25 MHz

ACPR1

885 KHz

23 24 25 26 27 28 29 30 31 32 33

DSQ

= 100 mA

DSQ

= 200 mA

DSQ

= 400 mA

DSQ

= 600 mA

DSQ

= 800 mA

= 1.96 GHz,

= 5 V

64 CH IS95 CDMA

ACPR1

885 KHz

ACPR2

1.25 MHz

23 25 27 29 31 33 35

TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 5 V

ACPR

vs. OUTPUT POWER

ACPR

vs. OUTPUT POWER

Third Order Intermodulation Distortion, IM

3 (dBc)

Third Order Intermodulation Distortion, IM

(dBc)

Output Power, POUT (dBm) Output Power, POUT (dBm)

DISCONTINUED

NE6510179A

Parameters Q1 Parameters Q1

VTO -0.756 RG 0.05

VTOSC 0 RD 0.001

ALPHA 2 RS 0.001

BETA 2.245 RGMET 0

GAMMA 0 KF 0

GAMMADC(2) 0.01 AF 1

Q 1.7 TNOM 27

DELTA 0 XTI 3

VBI 0.6 EG 1.43

IS 1e-16 VTOTC 0

N 1 BETATCE 0

RIS 0 FFE 1

RID 0

TAU 10e-12

CDS 0.5e-12

RDB 0.001

CBS 0

CGSO(3) 20e-12

CGDO(4) 4e-12

DELTA1 0.3

DELTA2 0.2

FC 0.5

VBR Infinity

Parameter Units

capacitance picofarads

inductance nanohenries

resistance ohms

SCHEMATIC

FET NONLINEAR MODEL PARAMETERS (1) UNITS

MODEL RANGE

Frequency: 0.5 to 4 GHz

Bias: VDS = 2.2 V to 5 V, ID = 150 mA to 300 mA

Date: 3/29/2000

RDX

0.2 ohms

RDBX

400 ohms

CBSX

RSX

100 pF

0.05 ohms

LSX

0.001 nH

SOURCE

0.65 nH 0.01 nH DRAIN

LD LDX

0.75 nH

LGX

CGS PKG

0.1 pF

CDS PKG

0.1 pF

0.001 nH

GATE

NONLINEAR MODEL

Life Support Applications

These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably

be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and

agree to fully indemnify CEL for all damages resulting from such improper use or sale.

(1) Series IV Libra TOM Model

The parameter in Libra corresponds to the parameter in PSpice:

(2) GAMMADC GAMMA

(3) CGSO CGS

(4) CGDO CGD

A Business Partner of NEC Com

ound Semiconductor Devices, Ltd

11/04/2002

DISCONTINUED

4590 Patrick Henry Drive

Santa Clara, CA 95054-1817

Telephone: (408) 919-2500

Facsimile:

(

408

)

988-0279

Subject: Compliance with EU Directives

CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant

with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous

Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive

2003/11/EC Restriction on Penta and Octa BDE.

CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates

that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are

exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.

All devices with these suffixes meet the requirements of the RoHS directive.

This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that

go into its products as of the date of disclosure of this information.

Restricted Substance

per RoHS

Concentration Limit per RoHS

(values are not yet fixed)

Concentration contained

in CEL devices

-A -AZ

Lead (Pb) < 1000 PPM Not Detected (*)

Mercury < 1000 PPM Not Detected

Cadmium < 100 PPM Not Detected

Hexavalent Chromium < 1000 PPM Not Detected

PBB < 1000 PPM Not Detected

PBDE < 1000 PPM Not Detected

If you should have any additional questions regarding our devices and compliance to environmental

standards, please do not hesitate to contact your local representative.

Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance

content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information

provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better

integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate

information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL

suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for

release.

In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to

customer on an annual basis.

See CEL Terms and Conditions for additional clarification of warranties and liability.

DISCONTINUED