Ordering number : EN7990A 2SA2126 Bipolar Transistor http://onsemi.com -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Applications * DC / DC converter, relay drivers, lamp drivers, motor drivers Features * * Adoption of MBIT processes Low collector-to-emitter saturation voltage High current capacitance High-speed switching * * Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCES Collector-to-Emitter Voltage Collector-to-Emitter Voltage VCEO VEBO IC Emitter-to-Base Voltage Collector Current Collector Current (Pulse) ICP IB Base Current --50 V --50 V --50 V --6 V --3 A --6 --600 A mA Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 0.5 0.6 1 2 2.3 7.5 0.6 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector 3 2.3 1 2 2.5 0.8 0.8 1.6 0.85 1.2 3 0 to 0.2 1.2 2.3 2SA2126-TL-E 2SA2126-TL-H 1.2 5.5 0.85 0.7 0.5 1.5 1.5 4 7.0 5.5 4 2.3 6.5 5.0 2SA2126-E 2SA2126-H 0.5 7.0 2.3 6.5 5.0 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector TP-FA TP Product & Package Information * Package : TP * JEITA, JEDEC : SC-64, TO-251 * Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) * Package : TP-FA * JEITA, JEDEC : SC-63, TO-252 * Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL Electrical Connection 2,4 A2126 LOT No. TL 1 3 Semiconductor Components Industries, LLC, 2013 September, 2013 60612 TKIM TC-00002496/21505EA TSIM TB-00000214 No.7990-1/9 2SA2126 Continued from preceding page. Parameter Symbol Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Tc=25C Unit 0.8 W 15 W 150 C --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage VCE= --2V, IC= --100mA Collector-to-Emitter Breakdown Voltage VCE(sat)1 VCE(sat)2 --1 A A 560 MHz VCB= --10V, f=1MHz IC= --1A, IB= --50mA 24 --135 --270 mV IC= --2A, IB= --100mA IC= --2A, IB= --100mA --260 --520 mV --0.96 --1.2 pF V IC= --10A, IE=0A --50 V IC= --100A, RBE=0 IC= --1mA, RBE= --50 V Storage Time ton tstg See specified Test Circuit. Fall Time tf Turn-On Time Unit --1 390 IE= --10A, IC=0A Emitter-to-Base Breakdown Voltage max 200 V(BR)CES V(BR)CEO V(BR)EBO Collector-to-Emitter Breakdown Voltage typ VCE= --10V, IC= --500mA VBE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage Ratings min VCB= --40V, IE=0A VEB= --4V, IC=0A fT Cob Output Capacitance Conditions --50 V --6 V 30 ns 230 ns 18 ns Switching Time Test Circuit IB1 PW=20s D.C. 1% IB2 OUTPUT INPUT VR RB + 50 100F VBE=5V RL + 470F VCC= --25V --10IB1=10IB2= IC= --1A Ordering Information Device 2SA2126-E 2SA2126-H Package Shipping memo TP 500pcs./bag Pb Free Pb Free and Halogen Free TP 500pcs./bag 2SA2126-TL-E TP-FA 700pcs./reel Pb Free 2SA2126-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free No.7990-2/9 2SA2126 IC -- VCE --5.0 VCE= --2V mA 0mA --20 mA --150 mA --100 --250 --2.5 --3.5 --50mA --3.0 --20mA --2.5 --2.0 --10mA --1.5 --5mA --1.0 --2.0 --1.5 Ta= 75C 25 C --25 C --4.0 Collector Current, IC -- A --4.5 Collector Current, IC -- A IC -- VBE --3.0 --1.0 --0.5 --0.5 IB=0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Collector-to-Emitter Voltage, VCE -- V 0 0 --2.0 --0.4 --0.6 --0.8 VCE= --10V VCE= --2V Gain-Bandwidth Product, fT -- MHz DC Current Gain, hFE 5 Ta=75C 25C 3 --25C 2 100 7 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 3 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT07646 Collector-to-Base Voltage, VCB -- V 7 5 2 3 5 7 --0.1 2 3 5 7 --1.0 2 5 3 2 --0.1 7 C 5 5C 5 --2 =7 Ta 3 C 25 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 2 --0.1 75 Ta= 7 5 C 5 --2 C C 25 3 3 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 5 7 --10 IT07645 IC / IB=20 5 7 --10 IT07647 VBE(sat) -- IC 3 --1.0 3 VCE(sat) -- IC IC / IB=20 IC / IB=50 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 100 --0.01 --0.01 VCE(sat) -- IC 3 2 7 5 2 3 --1.0 f=1MHz 7 10 --0.1 5 Collector Current, IC -- A Cob -- VCB 100 7 3 --0.01 5 7 --10 IT07644 --1.2 IT07643 fT -- IC 1000 7 --1.0 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 --0.2 IT07642 2 --1.0 C Ta= --25 7 75C 25C 5 2 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 IT07648 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT07649 No.7990-3/9 2SA2126 ASO 50 0 s 3 2 op era tio n( Ta =2 5 C) 5 =2 (Tc C) --0.1 7 5 Collector Dissipation, PC -- W DC ion rat ope --1.0 7 5 s 0 10 0m 10 1m s ms s 0.8 10 IC= --3A 3 2 3 2 Tc=25C Single pulse --0.01 --0.1 2 3 PC -- Ta 0.9 <10s ICP= --6A DC Collector Current, IC -- A --10 7 5 0.7 0.6 No 0.5 he at 0.4 sin k 0.3 0.2 0.1 0 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector-to-Emitter Voltage, VCE -- V IT07650 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT07651 PC -- Tc 16 15 Collector Dissipation, PC -- W 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT07652 No.7990-4/9 2SA2126 Taping Specification 2SA2126-TL-E, 2SA2126-TL-H No.7990-5/9 2SA2126 Outline Drawing 2SA2126-TL-E, 2SA2126-TL-H Land Pattern Example Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.7990-6/9 2SA2126 Bag Packing Specification 2SA2126-E, 2SA2126-H No.7990-7/9 2SA2126 Outline Drawing 2SA2126-E, 2SA2126-H Mass (g) Unit 0.315 mm * For reference No.7990-8/9 2SA2126 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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