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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQI5N60C N-Channel QFET(R) MOSFET 600 V, 4.5 A, 2.5 Features Description * 4.5 A, 600 V, RDS(on) = 2.5 (Max.) @VGS = 10 V, ID = 2.1 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. * Low Gate Charge (Typ. 15 nC) * Low Crss (Typ. 6.5 pF) * 100% Avalanche Tested D G DS G I2-PAK S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) FQI5N60CTU 600 Unit V 4.5 A 2.6 A 18 A IDM Drain Current VGSS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 4.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 10 4.5 100 0.8 -55 to +150 mJ V/ns W W/C C 300 C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case, Max. RJA Thermal Resistance, Junction-to-Ambient, Max. (c)2003 Fairchild Semiconductor Corporation FQI5N60C Rev. C1 FQI5N60CTU 1.25 62.5 1 Unit C/W www.fairchildsemi.com FQI5N60C -- N-Channel QFET(R) MOSFET November 2013 Device Marking FQI5N60C Device FQI5N60CTU Electrical Characteristics Symbol Package I2-PAK Reel Size Tube Tape Width N/A Quantity 50 units TC = 25C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit 600 -- -- V -- 0.6 -- V/C VDS = 600 V, VGS = 0 V -- -- 1 A VDS = 480 V, TC = 125C -- -- 10 A Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.25 A -- 2.0 2.5 gFS Forward Transconductance VDS = 40 V, ID = 2.25 A -- 4.7 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 515 670 pF -- 55 72 pF -- 6.5 8.5 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 4.5A, RG = 25 (Note 4) VDS = 480 V, ID = 4.5A, VGS = 10 V (Note 4) -- 10 30 ns -- 42 90 ns -- 38 85 ns -- 46 100 ns -- 15 19 nC -- 2.5 -- nC -- 6.6 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.5 A ISM -- -- 18 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.5 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 300 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/s -- 2.2 -- C NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 18.9 mH, IAS = 4.5 A, VDD = 50V, RG = 25 , starting TJ = 25C. 3. ISD 4.5 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature. (c)2003 Fairchild Semiconductor Corporation FQI5N60C Rev. C1 2 www.fairchildsemi.com FQI5N60C -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 0 10 1 10 ID, Drain Current [A] 1 10 -1 10 o 150 C o -55 C o 25 C 0 10 Notes : 1. 250 s Pulse Test 2. TC = 25 10 -2 10 Notes : 1. VDS = 40V 2. 250 s Pulse Test -1 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 1 10 5 VGS = 10V 4 3 2 VGS = 20V 1 0 10 150 Notes : 1. VGS = 0V 2. 250 s Pulse Test 25 Note : TJ = 25 0 -1 0 2 4 6 8 10 10 0.2 0.4 0.6 ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 1000 1.2 1.4 12 VGS, Gate-Source Voltage [V] 800 Ciss Capacitance [pF] 1.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 600 Coss 400 Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 0.8 VSD, Source-Drain voltage [V] VDS = 120V 10 VDS = 300V 8 VDS = 480V 6 4 2 Note : ID = 4.5A 0 -1 10 0 0 10 1 10 4 8 12 16 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2003 Fairchild Semiconductor Corporation FQI5N60C Rev. C1 0 Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQI5N60C -- N-Channel QFET(R) MOSFET Typical Characteristics (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 2.25 A 0.5 0.0 -100 200 -50 100 150 Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 100 s 1 4 ID, Drain Current [A] 1 ms 10 ms 100 ms 0 DC 10 -1 10 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 1 2 10 3 2 1 0 25 -2 10 3 10 10 50 75 100 125 TC, Case Temperature [] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 150 0 D = 0 .5 0 .2 N o te s : 1 . Z J C( t ) = 1 . 2 5 / W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T J M - T C = P D M * Z J C( t ) 0 .1 10 -1 0 .0 5 0 .0 2 0 .0 1 JC ZJCZ(t), (t), Thermal Response [oC/W] Thermal Response VDS, Drain-Source Voltage [V] 10 200 5 10 ID, Drain Current [A] 50 TJ, Junction Temperature [ C] Operation in This Area is Limited by R DS(on) 10 0 o o TJ, Junction Temperature [ C] PDM s in g le p u ls e 10 t1 -2 10 -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve (c)2003 Fairchild Semiconductor Corporation FQI5N60C Rev. C1 4 www.fairchildsemi.com FQI5N60C -- N-Channel QFET(R) MOSFET Typical Characteristics FQI5N60C -- N-Channel QFET(R) MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) tp (c)2003 Fairchild Semiconductor Corporation FQI5N60C Rev. C1 VDS (t) VDD DUT tp 5 Time www.fairchildsemi.com FQI5N60C -- N-Channel QFET(R) MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2003 Fairchild Semiconductor Corporation FQI5N60C Rev. C1 6 www.fairchildsemi.com FQI5N60C -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 16. TO262 (I2PAK), Molded, 3-Lead, Jedec Variation AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT262-003 (c)2003 Fairchild Semiconductor Corporation FQI5N60C Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2003 Fairchild Semiconductor Corporation FQI5N60C Rev. C1 8 www.fairchildsemi.com FQI5N60C -- N-Channel QFET(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM Sync-LockTM F-PFSTM (R) AX-CAP(R)* FRFET(R) (R)* (R) SM Global Power Resource PowerTrench BitSiCTM GreenBridgeTM PowerXSTM Build it NowTM TinyBoost(R) Programmable Active DroopTM Green FPSTM CorePLUSTM TinyBuck(R) (R) QFET Green FPSTM e-SeriesTM CorePOWERTM TinyCalcTM QSTM GmaxTM CROSSVOLTTM TinyLogic(R) Quiet SeriesTM GTOTM CTLTM TINYOPTOTM RapidConfigureTM IntelliMAXTM Current Transfer LogicTM TinyPowerTM ISOPLANARTM DEUXPEED(R) TM TinyPWMTM Dual CoolTM Marking Small Speakers Sound Louder TinyWireTM Saving our world, 1mW/W/kW at a timeTM EcoSPARK(R) and BetterTM TranSiCTM EfficentMaxTM SignalWiseTM MegaBuckTM TriFault DetectTM ESBCTM SmartMaxTM MICROCOUPLERTM TRUECURRENT(R)* SMART STARTTM MicroFETTM (R) SerDesTM Solutions for Your SuccessTM MicroPakTM SPM(R) MicroPak2TM Fairchild(R) STEALTHTM MillerDriveTM Fairchild Semiconductor(R) UHC(R) SuperFET(R) MotionMaxTM FACT Quiet SeriesTM (R) Ultra FRFETTM SuperSOTTM-3 mWSaver FACT(R) UniFETTM OptoHiTTM SuperSOTTM-6 FAST(R) VCXTM OPTOLOGIC(R) SuperSOTTM-8 FastvCoreTM VisualMaxTM OPTOPLANAR(R) SupreMOS(R) FETBenchTM VoltagePlusTM SyncFETTM FPSTM XSTM ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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