Io = 200 mA
VR = 30 Volts
CDBQR0230L-HF
SMD Schottky Barrier Diode
Page 1
REV:C
Comchip Technology CO., LTD.
uA
V
30
0.5
IR
VF
Reverse current
Forward voltage
Parameter Conditions Symbol Min Typ
Max
Unit
VR = 10 V
IF = 200 mA
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BA
-Mounting position: Any.
-Weight: 0.001 gram(approx.).
A
mA
V
V
1
200
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
OC
OC
+125
+125
-40TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter Conditions Symbol Min Typ
Max
Unit
mW
125
PD
Power Dissipation
QW-G1096
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
0402/SOD-923F
RoHS Device
Halogen Free
RATING AND CHARACTERISTIC CURVES (CDBQR0230L-HF)
SMD Schottky Barrier Diode
Page 2
REV:C
Comchip Technology CO., LTD.
0 1510 20
1
10
100
525 30
Capacitance between terminals (PF)
Reverse voltage (V)
Fig.3 - Capacitance between
terminals characteristics
f = 1 MHz
Ta = 25 C
1u
10n
10u
100n
0 10 20 25 30
1m
100u
15
5
Reverse voltage (V)
Fig. 2 - Reverse characteristics
Reverse current ( A )
O
25 C
O
75 C
O
-25 C
0.2 0.40
1
100
0.5
0
0.8
1000
0.6
0.3
0.1 0.7
10
Forward current (mA )
Forward voltage (V)
Fig. 1 - Forward characteristics
Forward voltage (mV)
430
400
440
420
450
410
AVG:4 21.28mV
O
Ta=25 C
IF=200mA
n=30pcs
Fig. 5 - VF Dispersion map
Reverse current (uA)
30
0
40
20
50
10
AVG:4 .1 816uA
5
15
25
35
45
Fig. 6 - IR Dispersion map
Capacitance between
terminals(pF)
26
20
28
24
30
22
AVG:2 2.8 pF
21
23
25
27
29
Fig. 7 - CT Dispersion map
O
Ta=25 C
F=1MHz
VR=0V
n=10pcs
O
Ta=25 C
VR=10V
n=30pcs
0
20
40
60
80
100
0 25 50 75 100 125
O
Ambient temperature ( C)
Average forward current(%)
Fig.4 - Current derating curve
O
-25 C
O
25C
O
75C
O
125C
150
QW-G1096
SMD Schottky Barrier Diode
Page 3
REV:C
Comchip Technology CO., LTD.
QW-G1096
Index hole
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
d
E
F
B W
A
P
P0
P1
D1
D2
D
W1
T
C
Direction of Feed
Reel Taping Specification
Polarity
BCdD D2
D1
E F P P0P1T
SYMBOL
A
W W1
(mm)
(inch) 0.026 0.004±0.045 0.004±0.024 0.004±0.061 + 0.004 7.008 0.04±2.362 MIN. 0.512 0.008±
SYMBOL
(mm)
(inch) 0.069 0.004±0.138 0.002±0.157 0.004±0.157 0.004±0.079 0.004±0.009 0.002±0.315 0.008±0.531 MAX.
0.75 0.10± 1.15 0.10±
4.00 0.10±
1.55 + 0.10
3.50 0.05±1.75 0.10±
60.0 MIN. 13.0 0.20±0.60 0.10±
4.00 0.10± 2.00 0.10± 0.22 0.05± 8.00 0.20± 13.5 MAX.
178 1±
0402
(SOD-923F)
0402
(SOD-923F)
SMD Schottky Barrier Diode
Page 4
QW-G1096
REV:C
Comchip Technology CO., LTD.
Marking Code
BA
Park Number
CDBQR0230L-HF
Marking Code
BA
Suggested PAD Layout
SIZE
(inch)
0.030
(mm)
0.750
0.500
0.700
0.020
0.028
1.250 0.049
E0.250 0.010
Standard Package
A
B
C
D
A
C
B
E
D
0402/SOD-923F
Case Type
Qty per Reel
(Pcs)
5000
0402/SOD-923F
Reel Size
(inch)
7
